Assist Gate Driver Circuit on Crosstalk Suppression for SiC MOSFET Bridge Configuration

Li, Hui; Zhong, Yi; Yu, Renze; Yao, Ran; Long, Haiyang; Wang, Xiao; Huang, Zhangjian

doi:10.1109/jestpe.2019.2914180

Cited by 37 publications

(12 citation statements)

References 19 publications

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“…But the gate driver in [17][18][19] cannot suppress the crosstalk phenomenon generating negative gate voltage. To solve this problem, literature [20][21][22] provide a low impedance gate driving circuit. In [23][24], a series circuit of auxiliary switch and capacitor is used to reduce crosstalk in bridge arm.…”

Section: Introductionmentioning

confidence: 99%

A Multi-Level Gate Driver for Crosstalk Suppression of Silicon Carbide MOSFETs in Bridge Arm

Zhu

Yongsheng

et al. 2021

IEEE Access

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In high frequency applications of silicon carbide (SiC) MOSFET, it is easy to be affected by parasitic parameters where crosstalk phenomenon in bridge arm will occur. This paper proposes a novel multi-level gate driver which can suppress the crosstalk phenomenon of the SiC MOSFETs in bridge arm. An auxiliary MOSFET branch between the gate and source of SiC MOSFET is adopted to generate negative and zero gate voltage when SiC MOSFET is turned off. The negative gate voltage may reduce the positive gate crosstalk voltage, and zero gate voltage may reduce negative gate crosstalk voltage. Both the simulations and experiments are carried out to verify the feasibility and high performance of the proposed multi-level gate driver. Compared to the conventional gate driver, the proposed multi-level gate driver reduces the positive crosstalk voltage to -2.2V, and the negative crosstalk voltage to -4.4V, respectively.

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Section: Introductionmentioning

confidence: 99%

A Multi-Level Gate Driver for Crosstalk Suppression of Silicon Carbide MOSFETs in Bridge Arm

Zhu

Yongsheng

et al. 2021

IEEE Access

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“…In [6], a larger capacitor is connected in parallel to the gate-source of MOSFET to shunt the crosstalk current, but the control accuracy is more difficult to be guaranteed. In [7], during the switching transient period, simple electronic components, such as transistors and diodes, are used to shunt the Miller current, thereby the positive and negative crosstalk voltage are suppressed. RCD (resistorcapacitor-diode) level shifter are used to generate negative gate driver voltage [8], which reduces the amplitude of the positive crosstalk voltage below the threshold voltage and avoids the device from being false triggered.…”

Section: Introductionmentioning

confidence: 99%

A Novel Driver Circuit on Crosstalk Suppression in SiC MOSFETs

Kang³

et al. 2021

2021 IEEE International Symposium on Circuits and Systems (ISCAS)

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The performance of silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) is better than silicon devices in terms of switching speed, switching loss and temperature tolerance. Due to the higher di/dt and dv/dt during the switching process and the combined effect of various parasitic parameters, serious bridge-leg crosstalk will be generated in the SiC MOSFET bridge circuit. This paper firstly analyzes the mechanism of crosstalk, and based on the parameters extracted from the device data sheet and experiments, the maximum values of the bridge-leg crosstalk voltage under different operation conditions are calculated. Secondly, a passive Miller clamp circuit on crosstalk suppression in SiC MOSFET bridge-leg configuration is proposed in this paper. When the crosstalk occurs, the proposed driver circuit shunt the Miller current to the ground, and the gate-source parasitic capacitance of SiC MOSFET is bypassed. The advantages of the proposed crosstalk suppression circuit are that the switching speed is not sacrificed, the circuit topology is relatively simple, and it is easy to be integrated into the driver circuit of SiC MOSFETs. Finally, experimental results prove the effectiveness of the proposed crosstalk suppression circuit.

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“…However, in a power converter using the phase‐leg configuration, high‐speed switching behavior corresponding to high dv/dt strengthens the negative impact of parasitic components for SiC MOSFET, which may meddle the operating behavior of its complementary devices 12–14 . The positive gate voltage spikes are induced during a complementary switch turn‐on transient, bringing about extra switching losses and shoot‐through failure.…”

Section: Introductionmentioning

confidence: 99%

“…Moreover, according to the aforementioned literature, the crosstalk voltage is caused by high dv/dt switching, reducing the high dv/dt speed is the straight forward way to manipulate. Hence, a crosstalk mitigation strategy called Miller clamp circuit was proposed to increase the Miller plateau duration by deactivating the additional transistors between the gate–source terminals 12 . Consequently, dv/dt was decreased and crosstalk was mitigated.…”

Section: Introductionmentioning

confidence: 99%

Characteristic analysis and suppression of SiC MOSFET‐based crosstalk for inductive power transfer systems

Zhang

Guo

et al. 2021

Circuit Theory & Apps

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Due to the lower gate threshold voltage of silicon carbide (SiC) MOSFET as compared with the silicon (Si) MOSFET, crosstalk significantly limits the high‐speed switching performance of SiC MOSFET‐based inductive power transfer (IPT) systems. The paper studies the crosstalk characteristic and proposes a suppression method of crosstalk aiming at IPT systems with phase‐shifted control. Firstly, the generation mechanism of crosstalk is modeled and analyzed. Then, based on the analysis results, the special crosstalk problem for IPT systems with phase‐shifted control is discussed, and a crosstalk suppression method is analyzed based on the optimization of compensation network parameters. Finally, a 1‐kW IPT system prototype is built for experimental verification. The experimental results show that the optimization method can effectively suppress the crosstalk problem of the IPT system with phase‐shifted control and does not significantly affect the output power and transmission efficiency.

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Assist Gate Driver Circuit on Crosstalk Suppression for SiC MOSFET Bridge Configuration

Cited by 37 publications

References 19 publications

A Multi-Level Gate Driver for Crosstalk Suppression of Silicon Carbide MOSFETs in Bridge Arm

A Multi-Level Gate Driver for Crosstalk Suppression of Silicon Carbide MOSFETs in Bridge Arm

A Novel Driver Circuit on Crosstalk Suppression in SiC MOSFETs

Characteristic analysis and suppression of SiC MOSFET‐based crosstalk for inductive power transfer systems

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