Measurement-based electrical characterization of through silicon vias and transmission lines for 3D integration

Sun, Xiankai; Fang, Runiu; Zhu, Yunhui; Zhong, Xiaoxia; Bian, Yuan; Guan, Yong Liang; Miao, Min; Chen, Jing; Jin, Yufeng

doi:10.1016/j.mee.2015.10.010

Cited by 21 publications

(4 citation statements)

References 14 publications

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“…The via resistance (Rcu_via) and inductance (Lcu_via) computed through (3) and ( 6) are validated with fabrication based experimental results given in [25], [26] as depicted in Fig. 7 It is observed that the via resistance is in well agreement with the experimental result with an average error of 7.35% only.…”

Section: Cnt Based Tsvmentioning

confidence: 52%

Performance analysis of Cu/CNT-based TSV: impact on crosstalk and power

2022

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This paper presents the first realistic and holistic approach to exhibit compact resistance-inductance-capacitanceconductance (RLCG) model for (Carbon nanotube) CNT and Cu based different shaped through-silicon vias (TSVs) in 3-D ICs. The model primarily comprises the effect of bump, inter-metal dielectric, and eddy currents. Using the proposed model, a mathematical formulation for the coaxial, cylindrical, and tapered based via parasitics are derived using the concept of partial inductance, sectioning via laterally into infinitesimally thin slices and triangular inter-tube assemblage, respectively. The analytical model is validated against a fabrication based experimental results and subsequently employed for crosstalk induced delay, peak noise, and power losses analysis. Additionally, for the further validation, the S parameter for the Pi-based model is derived, and compared with an electromagnetic simulator to benchmark the proposed model. The tremendous consistency between the analytical and EM simulation based results further evidences the validity of the proposed model. Encouragingly, a significant improvement in the power losses, crosstalk, and peak noise can be observed using the CNT-based tapered TSV compared to the Cu-based via structures. Additionally, it is shown that the irrespective of via height, the average crosstalk induced delay, peak noise, signal transmission, and reflection loss of the TSV with tapered shaped 15-shell CNT bundle is reduced by 22.82%, 27.80%, 47.63%, and 33.71%, respectively compared to the Cu. KeywordsCrosstalk-induced delay • Eddy effect • Single-Walled Carbon nanotube (CNT) • 3-D IC • Mean-time-to-failure (MTTF) • resistance-inductance-capacitance-conductance (RLCG) model • Through-silicon via (TSV).

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Section: Cnt Based Tsvmentioning

confidence: 52%

Performance analysis of Cu/CNT-based TSV: impact on crosstalk and power

2022

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“…A test structure for measuring the electrical properties of the via was developed, as shown in figure 6(a) [65,66]. The printed substrate has a rectangular shape with a length of 24 mm and a width of 20 mm.…”

Section: Electrical Properties Of the Via Holementioning

confidence: 99%

3D printing of metasurface-based dual-linear polarization converter

Lee¹,

Noh²,

Lee³

et al. 2021

Flex. Print. Electron.

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3D printing using digital light processing (DLP) technology has been studied in various fields because of its ability to create complex shapes through a simple process. In this study, DLP 3D printing was employed in the implementation of the metasurface-based dual-linear polarization converter (DLPC). The unit cell of the metasurface-based DLPC for linear polarization conversion was designed consisting of the upper and lower dipole-pair antennas connected through vias and a shielding layer that electrically shields the antennas from each other, and its fabrication was based on the characterization results of the dielectric properties of the photocurable substrate materials and electrical properties of the conductive materials used for synthesizing the metasurface. The printability evaluation of dipole pairs, vias, and a shielding layer was carried out to implement the detailed structures of the DLPC in 3D printing. The electromagnetic wave transmission characteristics of the 3D-printed 8×8 array DLPC demonstrated an orthogonal polarization conversion, as predicted by the simulation results. This study confirmed that the DLP-based 3D printing technology can go beyond the existing functions of manufacturing objects and can be applied to the implementation of various electronics based on different meta-structures.

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“…The pitch between TSVs is also 40 μm, and the insertion loss of single TSV at 20 GHz is about −2.21 dB. The insertion loss of single TSV is much bigger due to the low‐resistivity silicon substrate [17], which means that it is better to adopt the high‐resistivity silicon substrate in the future experiments for the sake of getting a better high frequency electrical performance.…”

Section: Electrical Performance Testmentioning

confidence: 99%

Fine‐pitch through‐silicon via integration with self‐aligned back‐side benzocyclobutene passivation layer

Guan

Zeng

et al. 2016

Micro & Nano Letters

Self Cite

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A fine-pitch through-silicon via integration approach with self-aligned backside benzocyclobutene passivation layer is proposed. Different from the conventional lithographic process, the passivation layer is realised by leveraging plasma etching and chemical-mechanical polishing process. With its well-controlled repeatability, this approach can help reduce the process defect and copper contamination. A plenty of measurement techniques including X-ray radiographic testing, optical and scanning electron microscope observation, four-probe electrical measurement, as well as vector network analyser, are employed in order to verify the fabrication quality and the electrical performances. All the test results support that this fine-pitch through-silicon via integration approach has a promising application prospect.

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Measurement-based electrical characterization of through silicon vias and transmission lines for 3D integration

Cited by 21 publications

References 14 publications

Performance analysis of Cu/CNT-based TSV: impact on crosstalk and power

Performance analysis of Cu/CNT-based TSV: impact on crosstalk and power

3D printing of metasurface-based dual-linear polarization converter

Fine‐pitch through‐silicon via integration with self‐aligned back‐side benzocyclobutene passivation layer

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