ICMTS 1998. Proceedings of 1998 International Conference on Microelectronic Test Structures (Cat. No.98CH36157)
DOI: 10.1109/icmts.1998.688025
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Measurement of lithographical proximity effects on matching of bipolar transistors

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Cited by 20 publications
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“…The main advantage of this approach is that the secondary driving voltage is now also identical for both transistors of the pair since it is determined by the forcing voltage source of SMU2. Likewise to what was reported in [11], the voltage source inequality problem is now shifted to the inequality of the "zero value" (COMMON) of the two drain SMUs. By placing extra needles on the two drain contact pads and connecting these with the internal differential voltmeter of the parameter analyzer (VMU1 and 2), we can monitor (and compensate for) this offset voltage.…”
Section: Algorithm Improvementsmentioning
confidence: 61%
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“…The main advantage of this approach is that the secondary driving voltage is now also identical for both transistors of the pair since it is determined by the forcing voltage source of SMU2. Likewise to what was reported in [11], the voltage source inequality problem is now shifted to the inequality of the "zero value" (COMMON) of the two drain SMUs. By placing extra needles on the two drain contact pads and connecting these with the internal differential voltmeter of the parameter analyzer (VMU1 and 2), we can monitor (and compensate for) this offset voltage.…”
Section: Algorithm Improvementsmentioning
confidence: 61%
“…An example of an alternative method is based on a voltage transformation scheme combined with SMU ground voltage offset compensation. This approach is comparable to the one used for accurate measurements of bipolar junction transistors as described in [11]. For MOSFETs, this means that instead of measuring the transistors with the drain at 0.1 V, we ground the drain for the transistor under test and apply a negative source voltage.…”
Section: Algorithm Improvementsmentioning
confidence: 97%