Measurement of local variations in spacing and orientation of lattice plane of synthetic quartz

Yoshimura, Junichi; Miyazaki, Toshiki; Wada, Takehiko; Köhra, Kazutake; Hosaka, Masahiro; Ogawa, Tomoya; Taki, Sadao

doi:10.1016/0022-0248(79)90187-8

Cited by 70 publications

(16 citation statements)

References 5 publications

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“…Such nonequivalence in d 18 O values between different sectors could thus either be caused by a structural, crystallographic control on isotope fractionation, growth rate or kinetics, and/or by growth mechanisms (Dowty, 1976;Watson and Liang, 1995;Yoshimura and Kohra, 1976;Yoshimura et al, 1979;Larkin et al, 1982;Onasch and Vennemann, 1995;Watson, 2004;Jourdan et al, 2009), or by a combination of these.…”

Section: Face-related O-isotope Fractionationmentioning

confidence: 97%

“…Yoshimura et al (1979) and Larkin et al (1982) have previously suggested that growth mechanisms of quartz are influenced by the Al content. When the Al content is large, spiral growth is likely to occur, and this change from a normal step-wise growth may also influence the incorporation of O-isotopes, perhaps via a control on the type of ion that may be incorporated (see below).…”

Section: Growth Mechanismsmentioning

confidence: 97%

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Oxygen isotope sector zoning in natural hydrothermal quartz

et al. 2009

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Oxygen isotope measurements using SIMS and laser-fluorination methods confirm the presence of concentric and sector zoning in low-temperature (200ºC to <400ºC) hydrothermal quartz from Alpine veins. While concentric zoning is most readily explained by changes in the chemical composition of the fluid or temperature of crystallization, the reasons for sector zoning are more difficult to explain. Relative enrichment in 18 O for crystallographically different sectors of quartz corresponds to m >r >z. Sector zoning is, however, largely limited to the exterior zones of crystals and/or to crystals with large Al (>1000 ppm) and trace element contents, probably formed at temperatures <250ºC. Differences in d 18 O between the prismatic (m) relative to the rhombohedral (r and z) growth sectors of up to 2% can be explained by a combination of a face-related crystallographic and/or a growth rate control. In contrast, isotopic sector zoning of up to about 1.5% amongst the different rhombohedral faces increases in parallel with the trace element content and is likely to represent disequilibrium growth. This is indicated by non-systematic, up to 2%, differences within single growth zones and the irregular, larger or smaller, d 18 O values (of several permil) of the exterior compared to the inner zones of the same crystals. Disequilibrium growth may be related to the large trace element content incorporated into the growing quartz at lower temperatures (<250ºC) and/or be related to fluid-vapour separation, allowing crystal growth from both a vapour as well as a liquid phase.

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Section: Face-related O-isotope Fractionationmentioning

confidence: 97%

Section: Growth Mechanismsmentioning

confidence: 97%

Oxygen isotope sector zoning in natural hydrothermal quartz

et al. 2009

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“…of the lattice parameter. Using this technique, many investigations of defects in silicon and germanium semiconductor crystals as well as quartz single crystals "were published by Bonse and co-workers (Bonse, 1962;Bonse & Hart, 1965a, b;Bonse & te Kaat, 1968), Renninger (1961Renninger ( , 1963Renninger ( , 1964Renninger ( , 1976, Kohra & coworkers (Kohra, Yoshimatsu & Shimizu, 1962;Kohra, 1976), Yoshimura & Kohra (1976), Yoshimura et al (1979), Hart (1969Hart ( , 1971Hart ( , 1975, Chikawa, Asaeda & Fujimoto (1970), Stacy & Janssen (1974) and others. In order to study a variety of single crystals, other than nearly perfect semiconductors or quartz crystals, the non-parallel (+,-) or (+,+) settings were used by Bearden & Henins (1965), Deslattes (1968), Kohra, Hashizume & Yoshimura (1970), Yoshimura etal.…”

Section: Introductionmentioning

confidence: 99%

Analysis of X-ray diffraction conditions for double-crystal topography

Kuo¹,

Bilello²

1984

J Appl Cryst

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In recent years, with the advent of nearly perfect crystals, double-crystal topography has become very useful. For applications with such crystals the diffraction geometry in the double-crystal arrangement in three dimensions should be taken into account. Detailed studies of this problem are presented in this paper. Formulas for calculating the image height and displacement as the crystal is rotated are reported for various conditions. In the equispacing case, the image height is not limited provided the sample crystal is untilted with respect to the first crystal. However, if the crystal is tilted even a small amount then the image is limited and depends not only on the tilt angle ~ but also on the distance between the X-ray source and the crystal L and on the degree of crystal perfection ft. In general, the tilt angle should not exceed 1' to obtain a large-area topograph and to measure the correct rocking curve in the asymmetric mode. In the unequispacing case, the image height is always limited. In this case, even when the crystal is not tilted, the image height is a function of L, ~o and the difference in Bragg angle, AO, between the diffraction planes of the two crystals. The image height is directly proportional to fl and inversely related to AO. In this case, in order to obtain a large-area topograph of a nearly perfect crystal L must be large or A O must be small. The different experimental conditions are explored for various types of first and second crystals to verify the analytical formulas that have been derived. The experimental data were found to be in good agreement qualitatively and quantitatively with the analysis.

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“…Quartz crystals have been under investigation for a long a time (Lang & Miuscov, 1967;Hä rtwig et al, 1977;Yoshimura et al, 1979;Hö nnicke et al, 2004). Among others, they can be used as piezoelectric sensors in both longitudinal (X-cut crystals) and transverse mode (Y-cut crystals).…”

Section: Crystal Characterizationmentioning

confidence: 99%

High-quality quartz single crystals for high-energy-resolution inelastic X-ray scattering analyzers

et al. 2013

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Spherical analyzers are well known instruments for inelastic X-ray scattering (IXS) experiments. High-resolution IXS experiments almost always use Si single crystals as monochromators and spherical analyzers. At higher energies (>20 keV) Si shows a high energy resolution (<10 meV), at an exact symmetric back-diffraction condition, since the energy resolution is given by the real part of the susceptibility or polarizability. However, at low energies (<10 keV), high energy resolution is difficult to achieve with Si. -SiO 2 (quartz) can be an option, since it offers high energy resolution at low energies. In this work, the characterization of high-quality -SiO 2 is presented. Such characterization is made by high-resolution rocking curve, topography and lattice parameter mapping in different samples from a single block. X-ray optics with -SiO 2 for IXS at lower energies (from 2.5 to 12.6 keV) with medium to high energy resolution (from 90 to 11 meV) are proposed and theoretically exploited.

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Measurement of local variations in spacing and orientation of lattice plane of synthetic quartz

Cited by 70 publications

References 5 publications

Oxygen isotope sector zoning in natural hydrothermal quartz

Oxygen isotope sector zoning in natural hydrothermal quartz

Analysis of X-ray diffraction conditions for double-crystal topography

High-quality quartz single crystals for high-energy-resolution inelastic X-ray scattering analyzers

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