Measurement of Microhardness of Photoresist Films on Silicon by the Scratching Method

Бринкевич, Д. И.; Просолович, В. С.; Янковский, И. Н.; Вабищевич, С. А.; Вабищевич, Н. В.; Гайшун, В. Е.

doi:10.21122/2220-9506-2016-7-1-77-84

Cited by 3 publications

(2 citation statements)

References 5 publications

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“…Low radiation-chemical yields of the formation of radiolysis products are related to relatively short lifetimes of ion pairs and high yields of excited states, which are quite stable and less prone to fragmentation reactions due to energy distribution over conjugated π bonds, [14]. The homolytic transformations of phenol-formaldehyde resin can induce various ion-molecule reactions, for example, reaction (4), the decomposition of excited molecules according to reaction (5), and radical-molecule reactions, for example, (6). As a result, radicals of phenoxyl (I) and methylene (II) types are predominantly formed; they exhibit thermodynamic stability due to spin density delocalization in the aromatic system.…”

Section: Resultsmentioning

confidence: 99%

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Адгезия К Монокристаллическому Кремнию Пленок Диазохинон-Новолачного Фоторезиста, Имплантированных Ионами Бора И Фосфора

Вабищевич¹,

Бринкевич²,

Бринкевич³

et al. 2020

Химия высок. энергий

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The effect of ion implantation on the specific energy of delamination of FP9120 diazoquinonenovolac photoresist films deposited on single-crystal silicon wafers has been studied. It has been found that during the implantation of boron and phosphorus ions, ester crosslinks between hydroxyl groups on the surface of an oxide layer of the silicon wafer and the carboxyl groups of 1-H-indene-3-carboxylic acid grafted to the polymer are formed at the photoresist-silicon interface, thereby leading to an increase in the specific energy G of film delamination from the substrate. This effect is observed far beyond the ion range, being more pronounced in the case of implantation of phosphorus ions.

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Section: Resultsmentioning

confidence: 99%

“…Indentation was carried out at room temperature on a PMT-3 instrument according to a standard procedure [6]. A diamond tip as a tetrahedral pyramid with a square base and the apex angle α = 136° was used as an indenter.…”

Section: Methodsmentioning

confidence: 99%

Адгезия К Монокристаллическому Кремнию Пленок Диазохинон-Новолачного Фоторезиста, Имплантированных Ионами Бора И Фосфора

Вабищевич¹,

Бринкевич²,

Бринкевич³

et al. 2020

Химия высок. энергий

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Adhesion of Diazoquinone–Novolac Photoresist Films Implanted with Boron and Phosphorus Ions to Single-Crystal Silicon

Вабищевич

Бринкевич

et al. 2020

High Energy Chem

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Effect of Ion Implantation on the Adhesion of Positive Diazoquinone-Novolak Photoresist Films to Single-Crystal Silicon

Вабищевич

Бринкевич

Просолович

et al. 2020

J. Synch. Investig.

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The specific energy of detachment of diazoquinone-novolak FP9120 photoresist films of various thicknesses from singlecrystal silicon is studied by the microindentation method. For 5-μm films, when the normal component of the load is predominant, the values of the specific energy of polymer-film detachment G are shown to vary within the range 0.1-0.3 J/m 2 . In the case of lateral loading for thin films, the G value is 3.5-3.7 J/m 2 . Implantation with boron and phosphorus ions results in an increase in the G value. This effect is more pronounced with P + -ion implantation. The most probable reason for enhancement of the adhesive interaction at the photoresist-silicon interface is the formation of new chemical bonds between hydroxyl groups on the surface of the oxide layer of the silicon wafer and the photoresist molecules. This is a preview of subscription content, access via your institution.

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Measurement of Microhardness of Photoresist Films on Silicon by the Scratching Method

Cited by 3 publications

References 5 publications

Адгезия К Монокристаллическому Кремнию Пленок Диазохинон-Новолачного Фоторезиста, Имплантированных Ионами Бора И Фосфора

Адгезия К Монокристаллическому Кремнию Пленок Диазохинон-Новолачного Фоторезиста, Имплантированных Ионами Бора И Фосфора

Adhesion of Diazoquinone–Novolac Photoresist Films Implanted with Boron and Phosphorus Ions to Single-Crystal Silicon

Effect of Ion Implantation on the Adhesion of Positive Diazoquinone-Novolak Photoresist Films to Single-Crystal Silicon

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