Measurement of stress and relaxation in Si1−<i>x</i>Ge<i>x</i> layers by Raman line shift and x-ray diffraction

Dietrich, B.; Bugiel, E.; Klatt, J.; Lippert, G.; Morgenstern, T.; Osten, H. J.; Zaumseil, P.

doi:10.1063/1.354587

Cited by 66 publications

(32 citation statements)

References 6 publications

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“…For the samples with the lowest boron concentrations ͑5ϫ10 16 and 5ϫ10 17 cm Ϫ3 ͒ the first-order Si Raman line has a Lorentzian shape, similar to the reference one. This can be seen in Fig.…”

Section: A Sige Layers With Low Boron Concentrationmentioning

confidence: 70%

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Effect of stress and composition on the Raman spectra of etch-stop SiGeB layers

Pérez-Rodrı́guez

Romano‐Rodríguez

Cabezas

et al. 1996

Journal of Applied Physics

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Si 1Ϫ(xϩy) Ge x B y strained layers on Si ͑xр3.4%, yр0.4%͒ have been analyzed by Raman spectroscopy. Stress in the layers has not been observed to affect the Fano interaction parameters of the first-order Si-Si Raman line. These parameters have been determined in the range of B concentrations from 5ϫ10 19 to 2ϫ10 20 cm Ϫ3 and Ge fractions from 1% to 3.4%. The observed shift in the spectra has been found to depend linearly on both the germanium and boron contents. These data have been correlated with the stress measured in the layers by mechanical wafer bow measurements. The dependence of the Raman shift on the germanium content and strain agrees with that previously reported for strained SiGe layers. According to these data, Raman spectroscopy appears as an interesting tool for the nondestructive assessment of stress and composition of these layers.

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Section: A Sige Layers With Low Boron Concentrationmentioning

confidence: 70%

“…As is shown in this table, layers with low boron concentration ͑5ϫ10 16 and 5ϫ10 17 cm Ϫ3 ͒ and Ge concentrations similar to those of the SiGeB ones have also been grown ͑layers 43-53͒.…”

Section: Methodsmentioning

confidence: 77%

Effect of stress and composition on the Raman spectra of etch-stop SiGeB layers

Pérez-Rodrı́guez

Romano‐Rodríguez

Cabezas

et al. 1996

Journal of Applied Physics

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“…Raman spectroscopy was applied widely for the investi-gation of composition and stress in Si/Ge structures such as SiGe epitaxial layers, [8][9][10][11][12][13][14] Si/Ge superlattices, [15][16][17][18] and Ge/Si quantum wells and quantum dots. 19,20 For these structures the Ge content, x and strain, ͑or r͒ can be obtained using three different methods of Raman data analysis.…”

Section: Introductionmentioning

confidence: 99%

Composition and strain in thin Si1−xGex virtual substrates measured by micro-Raman spectroscopy and x-ray diffraction

Perova¹,

Wasyluk²,

Lyutovich³

et al. 2011

Journal of Applied Physics

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Micro-Raman spectroscopy was employed for the determination of the germanium content, x and strain, , in ultrathin SiGe virtual substrates grown directly on Si by molecular beam epitaxy. The growth of highly relaxed SiGe layers was achieved by the introduction of point defects at a very low temperature during the initial stage of growth. SiGe virtual substrates with thicknesses in the range 40-200 nm with a high Ge content ͑up to 50%͒ and degree of relaxation, r, in the range 20%-100% were investigated using micro-Raman spectroscopy and x-ray diffraction ͑XRD͒ techniques. The Ge content, x, and strain, , were estimated from equations describing Si-Si, Si-Ge, and Ge-Ge Raman vibrational modes, modified in this study for application to thin SiGe layers. The alteration of the experimentally derived equations from previous studies was performed using independent data for x and r obtained from XRD reciprocal space maps. A number of samples consisting of a strained-silicon ͑s-Si͒ layer deposited on a SiGe virtual substrate were also analyzed. The stress value for the s-Si varied from 0.54 to 2.75 GPa, depending on the Ge-content in the virtual substrates. These results are in good agreement with theoretically predicted values.

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“…The same assumption has been made with regards to Si QW layer which is nearly twice as large as strained Si cap layer. By measuring the experimental position of Si-Si (ω SS ) and Si-Ge (ω SG ) phonon lines for SiGe alloy, the Ge content (x) and strain (ε) in SiGe layer can be determined by combination of the following equations [13][14][15] .…”

Section: Strained Simentioning

confidence: 99%

Spectroscopical analyis of strained silicon quantum wells

et al. 2005

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In this study, Strained silicon Quantum Wells (QW) were characterised using a variety of micro-scopical techniques. Among the techniques used were Transmission Electron Microscopy (TEM), Elemental Electron Loss Spectroscopy (EELS), and micro-Raman spectroscopy. A combination of these methods facilitates investigation of the structure, the strain, and the dislocations present in such materials. Both conventional and High Resolution Transmission Electron Microscopy (HRTEM) are used to analyse strained silicon quantum wells (QW). These techniques allow for structure analysis at the atomic level. Elemental Electron Loss Spectroscopy (EELS) is used in tandem with other analytical techniques in order to give a quantitative analysis of the structures. The presence of various layers is independently verified using EELS, while layer depth and concentration profiles are also established. Relaxation levels in the virtual substrate as well as the strain in Si quantum wells are calculated using Raman spectroscopy.

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Measurement of stress and relaxation in Si1−xGex layers by Raman line shift and x-ray diffraction

Abstract: Changes in the densities of dislocations on distinct slip systems during stress relaxation in thin aluminium layers: The interpretation of xray diffraction line broadening and line shift

Cited by 66 publications

References 6 publications

Effect of stress and composition on the Raman spectra of etch-stop SiGeB layers

Effect of stress and composition on the Raman spectra of etch-stop SiGeB layers

Composition and strain in thin Si1−xGex virtual substrates measured by micro-Raman spectroscopy and x-ray diffraction

Spectroscopical analyis of strained silicon quantum wells

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