Measurement of the Dresselhaus and Rashba Spin-Orbit Coupling Via Weak Anti-Localization in InSb Quantum Wells

Dedigama, Aruna; Jayathilaka, Dilhani; Gunawardana, S. H.; Murphy, S. Q.; Edirisooriya, M.; Goel, N.; Mıshıma, Tetsuya D.; Santos, M. B.

doi:10.1007/978-1-4020-8425-6_9

Cited by 7 publications

(6 citation statements)

References 6 publications

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“…25 Our k ⃗ • p⃗ calculation for this QW width predicts α = 0.2 eVÅ, which is lower than the α = 0.8 eVÅ estimated from extracted parameters, suggesting there are contributions from Dresselhaus SOC terms in Sb compounds. 26 We also note that a Schrodinger-Poisson calculation for our 20 nm QW showed one electronic sub-band is occupied.…”

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confidence: 59%

“…If this splitting were all due to the linear Rashba SOC term, we would obtain its parameter as , where Δ n = | n + – n – |, assuming a band mass of m * = 0.011 m e at 50% composition . Our k⃗ · p⃗ calculation for this QW width predicts α = 0.2 eVÅ, which is lower than the α = 0.8 eVÅ estimated from extracted parameters, suggesting there are contributions from Dresselhaus SOC terms in Sb compounds . We also note that a Schrödinger-Poisson calculation for our 20 nm QW showed one electronic sub-band is occupied.…”

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confidence: 74%

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Superconducting Proximity Effect in InAsSb Surface Quantum Wells with In Situ Al Contacts

Mayer

Schiela

Yuan

et al. 2020

ACS Appl. Electron. Mater.

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We demonstrate robust superconducting proximity effect in InAs0.5Sb0.5 quantum wells grown with epitaxial Al contact, which has important implications for mesoscopic and topological superconductivity. Unlike more commonly studied InAs and InSb semiconductors, bulk InAs0.5Sb0.5 supports stronger spin-orbit coupling and larger g-factor. However, these potentially desirable properties have not been previously measured in epitaxial heterostructures with superconductors, which could serve as a platform for fault-tolerant topological quantum computing. Through structural and transport characterization we observe high-quality interfaces and strong spin-orbit coupling. We fabricate Josephson junctions based on InAs0.5Sb0.5 quantum wells and observe strong proximity effect. These junctions exhibit product of normal resistance and critical current, IcRN = 270 µV, and excess current, IexRN = 200 µV at contact separations of 500 nm. Both of these quantities demonstrate a robust and long-range proximity effect with highly-transparent contacts.

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confidence: 59%

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confidence: 74%

Superconducting Proximity Effect in InAsSb Surface Quantum Wells with In Situ Al Contacts

Mayer

Schiela

Yuan

et al. 2020

ACS Appl. Electron. Mater.

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“…5 Measurements on n-InSb/ InAlSb 2DESs which are remotely doped from only one side of the well have determined 0.07 Շ ͉␣͉ Շ 0.14 eV Å. 38,39 In the sections below the AL data will be analyzed to obtain the magnitude of ␣ in the heterostructure shown in Fig. 1.…”

Section: Methodsmentioning

confidence: 99%

Spin-orbit interaction determined by antilocalization in an InSb quantum well

et al. 2010

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The magnetoresistance at temperatures below 20 K in an n-InSb/ In 0.85 Al 0.15 Sb two-dimensional electron system is studied and described in terms of antilocalization due to quantum interference under strong spin-orbit interaction. The spin-orbit interaction coefficients are extracted by fitting the magnetoresistance data to an antilocalization theory distinguishing the Rashba and Dresselhaus contributions. A good agreement between magnetoresistance data and theory suggests a Rashba coefficient ͉␣͉Ϸ0.03 eV Å and a Dresselhaus coefficient ␥ Ϸ 490 eV Å 3 . A strong contribution from the Dresselhaus term leads to pronounced anisotropy in the energy splitting induced by spin-orbit interaction in the two-dimensional electron dispersion.

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“…Dedigama et al recently reported the first observations of WAL in a ͑low mobility͒ InSb QW supporting the presence of large SO coupling. 16 In an alternative approach, Khodaparast et al 17 extrapolated a spin splitting to zero field in an asymmetric 30 nm InSb/InAlSb QW from electron-spinresonance measurements. Assuming the Rashba interaction to be dominant, ␣ R was determined to be as high as 1.3 ϫ 10 −11 eV m. This is larger than recent theoretical calculations in InSb/InAlSb QWs estimating ␣ R to be in the range of 2-7ϫ 10 −12 eV m. 18 In this work it was also demonstrated that the bulk inversion asymmetry ͑BIA͒ contribution to spin splitting can be of significant and comparable value to that of the Rashba depending on the specific details of the heterostructure.…”

Section: Introductionmentioning

confidence: 99%

Zero-field spin splitting and spin-dependent broadening in high-mobilityInSb/In1−xAlxSbasymmetric quantum well heterostruct

et al. 2009

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We present high-field magnetotransport data from a range of 30-nm-wide InSb/InAlSb quantum wells with room-temperature mobilities in excess of 6 m 2 V −1 s −1 . Samples with the narrowest Landau level broadening exhibit beating patterns in the magnetoresistance attributed to zero-field spin splitting. Rashba parameters are extracted from a range of samples and gate biases using the difference in spin populations inferred from fast Fourier transforms of the data. The influence of Landau level broadening and spin-dependent scattering rates are investigated by magnetoconductance simulations, which provide key signatures that we were able to verify by experimental observation. These results demonstrate that in addition to the large Zeeman splitting, the combination of large and spin-dependent broadening is the significant parameter in controlling the appearance of beating in these structures.

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Measurement of the Dresselhaus and Rashba Spin-Orbit Coupling Via Weak Anti-Localization in InSb Quantum Wells

Cited by 7 publications

References 6 publications

Superconducting Proximity Effect in InAsSb Surface Quantum Wells with In Situ Al Contacts

Superconducting Proximity Effect in InAsSb Surface Quantum Wells with In Situ Al Contacts

Spin-orbit interaction determined by antilocalization in an InSb quantum well

Zero-field spin splitting and spin-dependent broadening in high-mobilityInSb/In1−xAlxSbasymmetric quantum well heterostruct

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