Measurement of the stimulated carrier lifetime in semiconductor optical amplifiers by four-wave mixing of polarized ASE noise

Hunziker, G.; Paiella, Roberto; Vahala, Kerry J.; Koren, U.

doi:10.1109/68.593343

Cited by 12 publications

(9 citation statements)

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“…The single pass gain, G S was then calculated from equation (5). The material gain, g m is plotted against the single pass gain, G S in figure 3 for D 1 and D 2 .…”

Section: Resultsmentioning

confidence: 99%

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A new technique for the estimation of optical bandwidth of semiconductor laser amplifiers

Karim

2005

SPIE Proceedings

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Semiconductor laser amplifier (SLA) based technology is an enabling technology for advanced optical networks. The potential for large-scale integration of SLA technology offers economical, high-performance devices that combine monolithic and hybrid solutions. Using SLAs, various devices can be built with enhanced functionalities as required for future optical networks. In a SLA, amplification of incident optical radiation takes place in the active layer along the length of an amplifier. However, frequency response of input signal (which can be amplified by a SLA), depends upon the available bandwidth. In this paper, a new analytical technique is outlined for bandwidth measurement of a SLA. This technique is based on measurement of saturation power and input power coupled in the active layer of SLA and is successfully applied to calculate the bandwidth of FP and near traveling wave (NTW) SLAs.

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“…The single pass gain, G S was then calculated from equation (5). The material gain, g m is plotted against the single pass gain, G S in figure 3 for D 1 and D 2 .…”

Section: Resultsmentioning

confidence: 99%

“…There are several techniques to measure the bandwidth accurately [5,6], however, accurate measurement of bandwidth is difficult and time consuming. In this paper a relatively simple and easy to use technique is developed for the measurement of bandwidth of a SLA.…”

Section: Introductionmentioning

confidence: 99%

A new technique for the estimation of optical bandwidth of semiconductor laser amplifiers

Karim

2005

SPIE Proceedings

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“…As a first application of the FWM polarization selection rules, we show in this section how they can be used to determine the stimulated recombination lifetime in a very straightforward manner [30]. The approach we use here takes advantage of the polarization selection rules by measuring a FWM signal generated along the TE direction from "TMinduced" dynamic gratings.…”

Section: A Measurement Of the Recombination Lifetimementioning

confidence: 99%

Polarization-dependent optical nonlinearities of multiquantum-well laser amplifiers

Paiella

Hunziker

Koren³

et al. 1997

IEEE J. Select. Topics Quantum Electron.

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We present a detailed study of the polarization properties of four-wave mixing in multiquantum-well (MQW) semiconductor optical amplifiers (SOA's). In particular, the polarization selection rules relevant to all processes contributing to the generation of the four-wave mixing signal are rigorously derived and discussed. We then show the importance of these results in applications where four-wave mixing is used as a spectroscopic tool to study the optical nonlinearities of semiconductor gain media. For illustration, we demonstrate two novel applications of polarization-resolved four-wave mixing. The first is a new technique for measuring the recombination lifetime in SOA's, based on mixing of a pump wave with polarized amplified spontaneous emission noise. In the second, we use the same polarization selection rules to measure the interwell transport lifetime in alternating-strain MQW amplifiers. Finally, we also discuss the possibility of studying the dynamics of the optically induced phase coherence between spin-degenerate states.

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“…As emphasized by the continuous lines, the data exhibit a 20 dB/dec roll-off at low modulation frequencies and a 40 dB/dec roll-off at modulation frequencies exceeding about 90 GHz. The former rolloff is associated with the interband stimulated recombination of the carriers in the quantum wells ͑occurring at a rate 1/(2 s ) of approximately 1.2 GHz under the present experimental condition 11 ͒. Since the emphasis here is on the features related to the capture process, this constant roll-off was normalized out ͑notice that the exact value of 1/(2 s ) used in this normalization is irrelevant, provided it is smaller than the smallest modulation frequency measured͒.…”

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confidence: 99%

“…[9][10][11][12] In this letter, we present a novel experimental technique based on frequency-resolved FWM to directly study capture processes in ͑multi͒quantum-well semiconductor optical amplifiers ͑SOAs͒. In the experiment, a small-signal carrier density modulation is generated in the electronic states near the barrier band-edges ͑by photomixing of two pump waves͒, and is then probed in the quantum wells as a function of the modulation frequency.…”

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confidence: 99%

Four-wave mixing mediated by the capture of electrons and holes in semiconductor quantum-well laser amplifiers

Paiella

Hunziker

Vahala

et al. 1997

Applied Physics Letters

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An experimental technique based on frequency-resolved four-wave mixing is proposed for the investigation of phonon-assisted capture of electrons and holes in electrically pumped semiconductor quantum wells. We show how this technique can be used to directly measure the intrinsic capture lifetime, with no need for involved numerical fits. We also present experimental results from an application of the technique to a multiquantum-well semiconductor optical amplifier. The possible impact of phase matching on the results is discussed. © 1997 American Institute of Physics. ͓S0003-6951͑97͒00351-3͔The electrical carriers injected to the barrier region of a semiconductor quantum-well structure are captured in the quantum-well states with a finite characteristic rate, the inverse capture lifetime 1/ cap . Such capture processes ͑effec-tively intersubband transitions between 3D states delocalized across the barrier region and quantum-confined 2D states in the quantum well͒ have attracted considerable attention in recent years, 1-8 within the broad context of ultrafast spectroscopy of semiconductor microstructures.1 Furthermore, they are of significant interest to the semiconductor laser community, because of their direct relevance to the dynamic and spectral features of quantum-well lasers. [4][5][6][7] It is generally agreed that the capture of electrons and holes in polar semiconductors mainly occurs through the emission of optical phonons, although carrier-carrier scattering also plays a role 7 in the presence of the large carrier densities typical of laser operation. In any case, the direct measurement of the ''intrinsic'' capture lifetime is complicated, because experiments typically measure a compound response including, e.g., drift and diffusion across the barrier region, or energy relaxation within the 3D continuum and within the 2D subbands.Recently, nondegenerate four-wave mixing ͑FWM͒ has emerged as a useful frequency-domain technique for the direct measurement of the ultrafast lifetimes governing relaxation processes in excited semiconductors. [9][10][11][12] In this letter, we present a novel experimental technique based on frequency-resolved FWM to directly study capture processes in ͑multi͒quantum-well semiconductor optical amplifiers ͑SOAs͒. In the experiment, a small-signal carrier density modulation is generated in the electronic states near the barrier band-edges ͑by photomixing of two pump waves͒, and is then probed in the quantum wells as a function of the modulation frequency. A similar technique has been used to investigate the capture dynamics in a quantum-well laser in Ref. 6, where the carrier density modulation was produced by injection of a directly modulated beam from another semiconductor laser. In that work, the modulation frequency was limited by the bandwidth of the laser source and the detection electronics to around 20 GHz. The use of FWM, as in the experiment described here, allows us to extend the measured bandwidth to a few hundreds of GHz, i.e., well beyond the typical values for the...

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Measurement of the stimulated carrier lifetime in semiconductor optical amplifiers by four-wave mixing of polarized ASE noise

Cited by 12 publications

References 9 publications

A new technique for the estimation of optical bandwidth of semiconductor laser amplifiers

A new technique for the estimation of optical bandwidth of semiconductor laser amplifiers

Polarization-dependent optical nonlinearities of multiquantum-well laser amplifiers

Four-wave mixing mediated by the capture of electrons and holes in semiconductor quantum-well laser amplifiers

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