Measurement of vapour pressure of In-based metalorganics for MOVPE

Accurate vapor pressure equation for trimethylindium in OMVPE

“…This equation has also been found to overestimate the TMI vapor pressure by a significant amount [1]. The two recently reported equations that are claimed to offer accurate vapor pressures are (a) by Fulem et al [2], i.e. log P (Pa) ¼ 27.337-5644.7/(T (K)-39.606), which can also be expressed in most familiar form as log P (Torr) ¼ 11.22-3267/T (K), and (b) by Shenai et al [1], i.e.…”

“…Higher purity, in particular, has been the main driver for the development of new synthetic strategies and novel purification routes leading to ultrapure trimethylindium (TMI) for indiumcontaining semiconductors. With the enhancement in purity of TMI, especially with the introduction of ''etherfree'' synthetic strategy, the purity-dependent physical properties of TMI (such as its melting point, boiling point, and vapor pressure) have been newly investigated [1,2] for their accuracy.…”

Heat and mass transfer at sublimation of a single chromium (III) and zirconium (IV) β-diketonate particle in the inert gas mixture

“…According to [9] for chromium (III) acetylacetonate, the sublimation curve is described by the formula: ln 39.197 15308.5 / p T ; for zirconium (IV) dipivaloylmethane the data of work [10], supplemented by results of specially conducted research in the IIC SB RAS for a wider range of temperatures, are approximated by the formula: ln 26.652 11006.4 / p T . The pressures and temperatures in these correlations are determined in Pa and K, correspondently.…”

Vapor pressures of dimethylcadmium, trimethylbismuth, and tris(dimethylamino)antimony

“…Therefore, in 2003 we launched a long-term research project aiming at systematic and accurate vapor pressure measurements of metalorganic precursors used for epitaxial techniques. Since then, a series of increasingly improved vapor pressure apparatuses capable of measuring reactive and toxic materials have been constructed in our laboratory [1][2][3][4] and the vapor pressures of the precursors of Ga, Al, Sb, Zn, Si, In, Y, Zr, Ge, and Hf have been determined [1,3,[5][6][7][8][9][10][11]. A recent compendium covering phase transition enthalpy measurements of organic and organometallic compounds [12] gives a comprehensive overview of the literature sources reporting vapor pressures of metalorganic precursors in the period 1880-2010 and we recommend to consult it first when looking for vapor pressure data for these materials.…”