Mech1anism and Control Technology of Trench Corner Rounding by Hydrogen Annealing for Highly Reliable Trench MOSFET

Shimizu, Ryosuke; Kuribayashi, Hitoshi; Hiruta, Reiko; Sudoh, Koichi; Iwasaki, Hiroshi

doi:10.1109/ispsd.2006.1666084

Cited by 1 publication

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“…To truly capitalize on the effects of improved dielectrics, the bulk GaN etch process, in particular the formation of the trench itself, needs to be highly optimized. The shape of the trench is usually optimized [ 93 , 94 , 95 , 96 , 97 ] to find the best combination of V BR and R on ; deep trenches with rounded corners have been reported to display good metrics [ 93 , 98 , 99 ]. However, for higher trench depths (over-etch) extending beyond the p-body, the peak field under the OFF-state could be aggravated [ 93 ].…”

Section: Off-state and On-state–optimization Of The M-o-s Stack In Quasi-vertical Mosfets From Imec Leuven Belgiummentioning

confidence: 99%

Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization

et al. 2021

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The vertical Gallium Nitride-on-Silicon (GaN-on-Si) trench metal-oxide-semiconductor field effect transistor (MOSFET) is a promising architecture for the development of efficient GaN-based power transistors on foreign substrates for power conversion applications. This work presents an overview of recent case studies, to discuss the most relevant challenges related to the development of reliable vertical GaN-on-Si trench MOSFETs. The focus lies on strategies to identify and tackle the most relevant reliability issues. First, we describe leakage and doping considerations, which must be considered to design vertical GaN-on-Si stacks with high breakdown voltage. Next, we describe gate design techniques to improve breakdown performance, through variation of dielectric composition coupled with optimization of the trench structure. Finally, we describe how to identify and compare trapping effects with the help of pulsed techniques, combined with light-assisted de-trapping analyses, in order to assess the dynamic performance of the devices.

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Section: Off-state and On-state–optimization Of The M-o-s Stack In Quasi-vertical Mosfets From Imec Leuven Belgiummentioning

confidence: 99%

Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization

et al. 2021

View full text Add to dashboard Cite

show abstract

Mech1anism and Control Technology of Trench Corner Rounding by Hydrogen Annealing for Highly Reliable Trench MOSFET

Cited by 1 publication

References 8 publications

Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization

Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization

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