Mechanism and Features of Field Emission in Semiconductors

Zhukov, N. D.; Михайлов, А. И.; Mosiyash, D. S.

doi:10.1134/s1063782619030229

Cited by 1 publication

(2 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In particular, a reduction of work function to a value as small as 0.7 eV has been found for InSb. [ 69 ] Interestingly, if the FE current is re‐calculated according to Equation () without introducing any surface roughness effect and assuming Φ = 0.7 eV on the effective emitting area, we obtain the real current intensity measured in the experiment and it corresponds to a field enhancement factor β ≈ 3, which is the enhancement that results from the simulation (see Figure 6b).…”

Section: Resultsmentioning

confidence: 99%

“…Indeed, In 2 O 3 is a n‐type semiconductor (bandgap ≈ 2.9 eV, electron affinity ≈ 3.7 eV) [ 65,66 ] and surface‐state and/or field effect induced band bending [ 67 ] near the semiconductor surface may cause important reduction of the electron affinity on the order of (or even larger than) 1 eV. [ 68 ] For the sake of completeness, we also mention that it has been recently reported [ 69 ] that field emission from III–V semiconductors is limited by the formation of virtual electronic states localized at the surface area, causing a significant decrease of the local work function. In particular, a reduction of work function to a value as small as 0.7 eV has been found for InSb.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Field Emission Characteristics of InSb Patterned Nanowires

Giubileo¹,

Passacantando

Urban

et al. 2020

Adv Elect Materials

View full text Add to dashboard Cite

properties toward next-generation electronic, optoelectronic, and photovoltaic devices, [1,5-8] such as field-effect-transistors, [9-11] and infrared detectors. [12,13] For instance, high mobility up to 77 000 cm 2 V −1 s −1 have been reported in InSb NWbased field-effect-transistors. [9] The use of InSb NWs to realize IR detectors working from mid-to long wavelength region has been reported. [14,15] Mid-infrared photodetectors based on a metal-semiconductormetal structure have been fabricated using electrochemically synthesized InSb NWs, showing high stability and excellent responsivity (8.4 × 10 4 AW −1). [15] Such enhanced properties have been explained in terms of high surface-to-volume ratio and 1D nanostructure of the photodetectors that significantly reduce the scattering and trapping phenomena, as well as the transit time between the electrodes. Multispectral optical absorptance in the short and mid-IR regions has been demonstrated [12] in top-down etched InSb NWs arrays, obtained by reactive ion etching of thin films produced by molecular beam epitaxy. In particular, it is possible to obtain highly tunable absorptance from 1.61 to 6.86 µm. [12] Furthermore, InSb NWs with diameter below 50 nm reach the quantum capacitance limit, providing significant improvement in device performance. [16] Single crystalline n-type InSb NWs have also been demonstrated as gas sensors at room temperature for NO 2 detection down to one part-per-million. [17] InSb NWs are promising candidates also for developing large area cold cathodes. It has been reported that the electron tunneling barrier is reduced due to high carrier concentration and relevant surface accumulation layer in InSb NWs. [18] This InSb nanowire arrays with different geometrical parameters, diameter and pitch, are fabricated by a top-down etching process on Si(100) substrates. Field emission properties of InSb nanowires are investigated by using a nano-manipulated tip anode inside of a scanning electron microscope. Stable field emission current is reported, with a maximum intensity extracted from a single nanowire of 1 µA, corresponding to a current density as high as 10 4 A cm −2. Stability and robustness of the nanowire is probed by monitoring field emission current for about 3 h. By tuning the cathode-anode distance in the range 500-1300 nm, the field enhancement factor and the turn-on field exhibit non-monotonic dependence, with maximum enhancement β ≈ 78 and minimum turn-on field E ON ≈ 0.033 V nm −1 for a separation d = 900 nm. The reduction of pitch between nanowires and the increase of diameter cause the reduction of the field emission performance, with reduced field enhancement (β < 60) and increased turn-on field (E ON ≈ 0.050 V nm −1). Finally, finite element simulation of the electric field distribution in the system demonstrates that emission is limited to an effective area near the border of the nanowire top surface, with annular shape and maximum width of 10 nm.

show abstract

Section: Resultsmentioning

confidence: 99%