2013
DOI: 10.1103/physrevlett.110.095504
|View full text |Cite
|
Sign up to set email alerts
|

Mechanism for the Compressive Strain Induced Oscillations in the Conductance of Carbon Nanotubes

Abstract: We report on the monotonic increase and the oscillation of electrical conductance in multiwalled carbon nanotubes with compressive strain. Combined experimental and theoretical analyses confirm that the conductance variation with strain is because of the transition from sp^{2} to sp^{3} configurations that are promoted by the interaction of walls in the nanotubes. The intrawall interaction is the reason for the monotonic increase in the conduction, while the oscillations are attributable to interwall interacti… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

1
4
0

Year Published

2013
2013
2022
2022

Publication Types

Select...
7

Relationship

0
7

Authors

Journals

citations
Cited by 7 publications
(5 citation statements)
references
References 32 publications
1
4
0
Order By: Relevance
“…The shift of the D- and G-bands in all the samples after ALD can be explained as the stress build-up on the outer walls due to the contraction of the lattice spacing of carbon atoms with the formation of C–O–Ti bonds at the interface . This trend in the Raman shift due to the strain induced on CNTs or monolayer graphene has been reported in literature. A shift of the D- and G-bands to higher wavenumbers is an indication of a compressive strain, whereas a shift to lower wavenumbers corresponds to a tensile strain. It seems that after ALD at 60 °C, there is a compressive strain corresponding to the positive shift of the D- and G-bands, and after annealing at 450 °C, there is tensile strain in the structure corresponding to the shift to lower wavenumbers (see Table ).…”
Section: Resultssupporting
confidence: 69%
“…The shift of the D- and G-bands in all the samples after ALD can be explained as the stress build-up on the outer walls due to the contraction of the lattice spacing of carbon atoms with the formation of C–O–Ti bonds at the interface . This trend in the Raman shift due to the strain induced on CNTs or monolayer graphene has been reported in literature. A shift of the D- and G-bands to higher wavenumbers is an indication of a compressive strain, whereas a shift to lower wavenumbers corresponds to a tensile strain. It seems that after ALD at 60 °C, there is a compressive strain corresponding to the positive shift of the D- and G-bands, and after annealing at 450 °C, there is tensile strain in the structure corresponding to the shift to lower wavenumbers (see Table ).…”
Section: Resultssupporting
confidence: 69%
“…Their mechanical properties—including high strength, high rigidity, and low density—make them highly attractive for various applications by controlling the band structure and thereby modifying the electronic transport properties. Most importantly, this can be achieved reversibly, opening the way to the vast possibility of designing electromechanical sensors, high current field effect transistors, and low resistance interconnects in electronic devices [27].…”
Section: General Considerations Regarding Cntsmentioning
confidence: 99%
“…In general, the modulation of physical properties in electronic materials can be approached by the method of “strain engineering”. So far, strain has been proved to be an effective method for tuning the electronic and optical properties of carbon nanotubes, graphene, , MoS 2 , , and BP, , etc. For example, Rudenko et al provide a tight-binding (TB) model parametrization for BP with an arbitrary number of layers to explore the realistic problems related to the electronic properties of multilayer BP.…”
Section: Introductionmentioning
confidence: 99%