2019
DOI: 10.1088/1361-6528/ab40d6
|View full text |Cite
|
Sign up to set email alerts
|

Mechanism of nucleation and critical layer formation during In/GaAs droplet epitaxy

Abstract: Fabrication of A III B V nanostructures by droplet epitaxy has many advantages over other epitaxial techniques. Although various characteristics of the growth by droplet epitaxy have been thoroughly studied for both lattice-matched and mismatched systems, little is known about physical processes hindering the formation of small size InAs/GaAs nanostructure arrays with low density and thin wetting layer. In this paper, we experimentally demonstrate that the indium droplet diameter can be reduced by decreasing t… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

0
19
0

Year Published

2020
2020
2022
2022

Publication Types

Select...
7

Relationship

2
5

Authors

Journals

citations
Cited by 23 publications
(19 citation statements)
references
References 58 publications
0
19
0
Order By: Relevance
“…The GaAs surface, which is initially arsenic-stabilized, becomes metal-stabilized after the In deposition. Then, droplets formed on the surface go into a stable equilibrium state in which the material balance is settled between the wetting layer (1 ML or more [ 24 , 27 , 29 ]) and droplets on the surface. Atoms do not migrate from the wetting layer to droplets because of their attraction by arsenic atoms in the substrate.…”
Section: Resultsmentioning
confidence: 99%
See 3 more Smart Citations
“…The GaAs surface, which is initially arsenic-stabilized, becomes metal-stabilized after the In deposition. Then, droplets formed on the surface go into a stable equilibrium state in which the material balance is settled between the wetting layer (1 ML or more [ 24 , 27 , 29 ]) and droplets on the surface. Atoms do not migrate from the wetting layer to droplets because of their attraction by arsenic atoms in the substrate.…”
Section: Resultsmentioning
confidence: 99%
“…Thereby, we carried out studies on droplets obtained after the deposition of a minimal amount of material leading to droplet formation. According to our previous work [ 27 ], a critical deposition amount for the In/GaAs system at a temperature of 300 °C is 1 ML. After exposing critical droplets formed at this deposition amount to the ultra-low arsenic flux, we found out that these droplets were very unstable and completely decayed at an arsenic pressure ratio above 2.…”
Section: Resultsmentioning
confidence: 99%
See 2 more Smart Citations
“…After the chemical etching of ONSs, formed on the surface of GaAs epitaxial structure by the LAO method, it is possible to create profiled nanoscale structures (PNSs) as a centers for localizing quantum dots growth [35][36][37][38], nanowires [39,40], and also antilattices used in the development of the element base of quantum computers [41]. For the manufacture of such structures, it is necessary to form ONS and then PNS on the GaAs surface with specified geometric parameters.…”
Section: Introductionmentioning
confidence: 99%