Mechanism of silicon exfoliation induced by hydrogen/helium co-implantation

Weldon, M. K.; Collot, M.; Chabal, Yves J.; Venezia, V. C.; Agarwal, Aditya; Haynes, T. E.; Eaglesham, D. J.; Christman, S. B.; Chaban, E. E.

doi:10.1063/1.122875

Cited by 97 publications

(51 citation statements)

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“…We now can combine these elements to first propose a coherent mechanism for the hydrogen induced exfoliation of germanium and then compare it with the mechanism developed elsewhere for silicon. 7,23 The first important observation is that after implantation hydrogen is located mainly in defect structures such as hydrogenated vacancies with different degrees of hydrogenation. The dominant features in the spectrum taken with s-polarization are at 1979, 2008, and 2050 cm −1 , which are respectively consistent with interstitial defects and monoand multi-hydrogenated vacancies.…”

Section: Discussionmentioning

confidence: 99%

“…Wafer bonding and layer transfer has now been applied to semiconductors other than silicon such as Ge, InP, GaAs, and GaN. [2][3][4][5][6] The mechanism of H-induced exfoliation has been extensively studied in the case of silicon, 7,8 and, more recently, in the case of InP. 9 The early work of Weldon et al provided important conclusions: ͑i͒ implantation induced defects serve to trap H within the Si substrate.…”

Section: Introductionmentioning

confidence: 99%

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Role of hydrogen in hydrogen-induced layer exfoliation of germanium

et al. 2007

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The role of hydrogen in the exfoliation of Ge is studied using cross-sectional transmission electron microscopy, atomic force microscopy, and multiple-internal transmission mode Fourier-transform infrared absorption spectroscopy and compared with the mechanism in silicon. A qualitative model for the physical and chemical action of hydrogen in the exfoliation of these materials is presented, in which H-implantation creates damage states that store hydrogen and create nucleation sites for the formation of micro-cracks. These micro-cracks are chemically stabilized by hydrogen passivation, and upon annealing serve as collection points for molecular hydrogen. Upon further heating, the molecular hydrogen trapped in these cracks exerts pressure on the internal surfaces causing the cracks to extend and coalesce. When this process occurs in the presence of a handle substrate that provides rigidity to the thin film, the coalescence of these cracks leads to cooperative thin film exfoliation. In addition to clarifying the mechanism of H-induced exfoliation of single-crystal thin Ge films, the vibrational study helps to identify the states of hydrogen in heavily damaged Ge. Such information has practical importance for the optimization of H-induced layer transfer as a technological tool for materials integration with these materials systems.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Role of hydrogen in hydrogen-induced layer exfoliation of germanium

et al. 2007

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“…9,10 This effect has been attributed to a synergy between the H-chemistry, that stabilizes the internal surface of the crack and breaks the Si-Si bond at the crack-tip, and the efficient crack pressurization provided by He. [8][9][10] Although the main physic concept of the coimplantation has been realized, it is a complex system for which the microstructure evolution strongly depends on experimental parameters, as the implantation order, energy range, and relative depth positions of H and He depth profiles.…”

Section: 2mentioning

confidence: 99%

On the microstructure of Si coimplanted with H+ and He+ ions at moderate energies

Reboh

Schaurich

Declémy

et al. 2010

Journal of Applied Physics

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Mechanism of the Smart Cut™ layer transfer in silicon by hydrogen and helium coimplantation in the medium dose range J. Appl. Phys. 97, 083527 (2005) We report on the microstructure of silicon coimplanted with hydrogen and helium ions at moderate energies. X-ray diffraction investigations in as-implanted samples show the direct correlation between the lattice strain and implanted ion depth profiles. The measured strain is examined in the framework of solid mechanics and its physical origin is discussed. The microstructure evolution of the samples subjected to intermediate temperature annealing ͑350°C͒ is elucidated through transmission electron microscopy. Gas-filled cavities in the form of nanocracks and spherical bubbles appear at different relative concentration, size, and depth location, depending on the total fluence. These different microstructure evolutions are connected with the surface exfoliation behavior of samples annealed at high temperature ͑700°C͒, determining the optimal conditions for thick layer transfer. 1.5 m thick Si films are then obtained onto glass substrates.

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“…In the delineation of a detailed model that explains the exfoliation process of silicon, Fourier transform infrared ͑FTIR͒ spectroscopy combined with other structural measurements such as transmission electron microscopy ͑TEM͒, atomic force microscopy ͑AFM͒, and forward-recoil scattering ͑FRS͒ has played a central role. [9][10][11] In these studies, it was shown that H-terminated vacancies form internal structures passivated with silicon mono-hydrides, where H 2 gas is segregated from the bulk semiconductor, providing the internal pressure necessary to form extended surfaces and cracks. The accumulation of H 2 into these cavities causes the internal pressure to rise to a level where the whole surface of silicon blisters.…”

Section: Introductionmentioning

confidence: 99%

Spectroscopic studies of the mechanism for hydrogen-induced exfoliation of InP

et al. 2005

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The motion and bonding configurations of hydrogen in InP are studied after proton implantation and subsequent annealing, using Fourier transform infrared ͑FTIR͒ spectroscopy. It is demonstrated that, as implanted, hydrogen is distributed predominantly in isolated pointlike configurations with a smaller concentration of extended defects with uncompensated dangling bonds. During annealing, the bonded hydrogen is released from point defects and is recaptured at the peak of the distribution by free internal surfaces in di-hydride configurations. At higher temperatures, immediately preceding exfoliation, rearrangement processes lead to the formation of hydrogen clusters and molecules. Reported results demonstrate that the exfoliation dynamics of hydrogen in InP and Si are markedly different, due to the higher mobility of hydrogen in InP and different implant-defect characteristics, leading to fundamental differences in the chemical mechanism for exfoliation.

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Mechanism of silicon exfoliation induced by hydrogen/helium co-implantation

Cited by 97 publications

References 9 publications

Role of hydrogen in hydrogen-induced layer exfoliation of germanium

Role of hydrogen in hydrogen-induced layer exfoliation of germanium

On the microstructure of Si coimplanted with H+ and He+ ions at moderate energies

Spectroscopic studies of the mechanism for hydrogen-induced exfoliation of InP

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