Mechanism of the Initiation Step in Atomic Hydrogen-Induced CVD of Amorphous Hydrogenated Silicon–Carbon Films from Single-Source Precursors

Wróbel, A. M.; Walkiewicz-Pietrzykowska, A.

doi:10.1002/(sici)1521-3862(199807)04:04<133::aid-cvde133>3.0.co;2-2

Cited by 24 publications

(25 citation statements)

References 40 publications

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“…This indicates that the film growth is mainly controlled by the adsorption of film‐forming precursors on the growth substrate surface, and the sticking coefficient of the reactive intermediates on the surface reaction also decreases with increasing temperature. [ 42 ] As can be noted in Figure 1b, the increase of substrate temperature, T S , from 30°C to 350°C involves a marked drop of r d from the value of ca. 4.7 nm min ‐1 to ca.…”

Section: Resultsmentioning

confidence: 87%

Atomic Hydrogen Induced Chemical Vapor Deposition of Silicon Oxycarbide Thin Films Derived from Diethoxymethylsilane Precursor

Uznański

Walkiewicz-Pietrzykowska

Jankowski

et al. 2020

Applied Organom Chemis

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Amorphous silicon oxycarbide (a-SiOC:H) films produced by remote plasma RPCVD from diethoxymethylsilane (DEMS) were characterized in terms of their basic properties related to the coatings deposited using conventional plasma enhanced PECVD method. The effect of substrate temperature (T S) on the growth rate, chemical composition, structure, and properties of resulting a-SiOC:H films is reported. Film growth is an adsorption-controlled process, wherein two mechanisms can be distinguished with a transition at about T S =70 C. Depending on the temperature, films of different nature can be obtained, from polymer-like to highly crosslinked material with C-Si-O network. The chemical structure of a-SiOC:H films was characterized by FTIR, 13 C and 29 Si solid-state NMR, and X-ray photoelectron spectroscopes. The a-SiOC:H films were also characterized in terms of their density, refractive index, surface morphology, conformality of coverage, hardness, adhesion to a substrate, and friction coefficient. The films were found to be morphologically homogeneous materials exhibiting good conformality of coverage and small surface roughness. Their refractive index exhibits anomalous effect revealing a minimum value at T S =125 C. Due to their exceptional physical properties a-SiOC:H films produced by RPCVD from DEMS precursor seems to be useful as potential dielectric materials or coatings for various encapsulation applications. K E Y W O R D S a-SiOC:H films, remote hydrogen plasma CVD, diethoxymethylsilane, mechanical properties, optical properties 1 | INTRODUCTION Nowadays, silicon oxycarbide materials (SiOC), also referred to as hybrid organosilicate glasses (OSG), processed from small organosilane precursors have attracted researchers' attention due to their many interesting properties, such as: thermal stability, dielectric constant of adjustable value from 2.4 to 3.9, very low absorption coefficient, wide band gap, tuneable refractive index, high hardness and elastic modulus, low residual stress and resistance to oxidation. [1-5] The main potential applications of silicon oxycarbide materials include light

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Section: Resultsmentioning

confidence: 87%

Atomic Hydrogen Induced Chemical Vapor Deposition of Silicon Oxycarbide Thin Films Derived from Diethoxymethylsilane Precursor

Uznański

Walkiewicz-Pietrzykowska

Jankowski

et al. 2020

Applied Organom Chemis

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“…Trimethylsilane has been widely used as a precursor compound for silicon carbide (SiC) film formation using various chemical vapor deposition (CVD) methods such as plasma-enhanced CVD, rapid thermal CVD, , atomic hydrogen-induced CVD, , and laser CVD . In the late 1980s, a relatively new CVD technique known as hot-wire CVD (HWCVD) or catalytic CVD (Cat-CVD) was developed.…”

Section: Introductionmentioning

confidence: 99%

“…In their work on detecting the free radicals on hot tungsten and rhenium filament under very low pressures (5 × 10 –6 Torr) using various single-source precursors including trimethylsilane in the HWCVD process, Zaharias et al found Si to be the major products from hot wire decomposition of TriMS on both filaments along with the formation of methyl radicals . In practice, the deposition of SiC films by CVD with single-source methylsilanes usually occurs at a pressure ranging from hundreds of milliTorr to several Torrs. ,,− At these pressures in a typical reactor, secondary gas-phase reactions between the primary radicals themselves and between the radicals and parent molecules become important. However, knowledge of the nature of the secondary gas-phase reactions when using TriMS in the HWCVD process lacks.…”

Section: Introductionmentioning

confidence: 99%

Effect of Si–H Bond on the Gas-Phase Chemistry of Trimethylsilane in the Hot Wire Chemical Vapor Deposition Process

Shi

Toukabri

et al. 2011

J. Phys. Chem. A

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The effect of the Si-H bond on the gas-phase reaction chemistry of trimethylsilane in the hot-wire chemical vapor deposition (HWCVD) process has been studied by examining its decomposition on a hot tungsten filament and the secondary gas-phase reactions in a reactor using a soft laser ionization source coupled with mass spectrometry. Trimethylsilane decomposes on the hot filament via Si-H and Si-CH(3) bond cleavages. A short-chain mechanism is found to dominate in the secondary reactions in the reactor. It has been shown that the hydrogen abstractions of both Si-H and C-H occur simultaneously, with the abstraction of Si-H being favored. Tetramethylsilane and hexamethyldisilane are the two major products formed from the radical recombination reactions in the termination steps. Three methyl-substituted disilacyclobutane molecules, i.e., 1,3-dimethyl-1,3-disilacyclobutane, 1,1,3-trimethyl-1,3-disilacyclobutane, and 1,1,3,3-tetramethyl-1,3-disilacyclobutane are also produced in reactor from the cycloaddition reactions of methyl-substituted silene species. Compared to tetramethylsilane and hexamethyldisilane, a common feature with trimethylsilane is that the short-chain mechanism still dominates. However, a more active involvement of the reactive silene intermediates has been found with trimethylsilane.

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“…The high-resolution gas chromatography/mass spectrometry (GC/MS) examination of the gas-phase conversion products of HMDS formed during remote hydrogen plasma CVD revealed that (CH 3 ) 3 SiH was the major product while TMS was not detected. 12 To the best of our knowledge, no study has been reported on investigating the gas-phase products in a HWCVD reactor using HMDS. In this work, we will extend our study of gas-phase chemistry of hot-wire decomposition of TMS to HMDS.…”

Section: Introductionmentioning

confidence: 99%

Decomposition of hexamethyldisilane on a hot tungsten filament and gas-phase reactions in a hot-wire chemical vapor deposition reactor

Shi

Tong

et al. 2008

Phys. Chem. Chem. Phys.

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To study the effect of an Si-Si bond on gas-phase reaction chemistry in the hot-wire chemical vapor deposition (HWCVD) process with a single source alkylsilane molecule, soft ionization with a vacuum ultraviolet wavelength of 118 nm was used with time-of-flight mass spectrometry to examine the products from the primary decomposition of hexamethyldisilane (HMDS) on a heated tungsten (W) filament and from secondary gas-phase reactions in a HWCVD reactor. It is found that both Si-Si and Si-C bonds break when HMDS decomposes on the W filament. The dominance of the breakage of Si-Si over Si-C bond has been demonstrated. In the reactor, the abstraction of methyl and H atom, respectively, from the abundant HMDS molecules by the dominant primary trimethylsilyl radicals produces tetramethylsilane (TMS) and trimethylsilane (TriMS). Along with TMS and TriMS, various other alkyl-substituted silanes (m/z = 160, 204, 262) and silyl-substituted alkanes (m/z = 218, 276, 290) are also formed from radical combination reactions. With HMDS, an increasing number of Si-Si bonds are found in the gas-phase reaction products aside from the Si-C bond which has been shown to be the major bond connection in the products when TMS is used in the same reactor. Three methyl-substituted 1,3-disilacyclobutane species (m/z = 116, 130, 144) are present in the reactor with HMDS, suggesting a more active involvement from the reactive silene intermediates.

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Mechanism of the Initiation Step in Atomic Hydrogen-Induced CVD of Amorphous Hydrogenated Silicon–Carbon Films from Single-Source Precursors

Cited by 24 publications

References 40 publications

Atomic Hydrogen Induced Chemical Vapor Deposition of Silicon Oxycarbide Thin Films Derived from Diethoxymethylsilane Precursor

Atomic Hydrogen Induced Chemical Vapor Deposition of Silicon Oxycarbide Thin Films Derived from Diethoxymethylsilane Precursor

Effect of Si–H Bond on the Gas-Phase Chemistry of Trimethylsilane in the Hot Wire Chemical Vapor Deposition Process

Decomposition of hexamethyldisilane on a hot tungsten filament and gas-phase reactions in a hot-wire chemical vapor deposition reactor

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