Thin films of bismuth vanadates are deposited by chemical vapor deposition (CVD) on
α-Al2O3 substrates using an O2 atmosphere and vanadyl(IV) acetylacetonate and triphenylbismuth as precursors. The microstructure of the samples is studied by XRD and Raman
spectroscopy and their chemical composition is investigated by XPS and SIMS. AFM is used
to analyze the surface morphology of the samples. All the samples show a nonohmic behavior
beyond a threshold voltage, V
th, which is linearly dependent on the V4+/V5+ ratio. Impedance
spectroscopy measurements indicate that the obtained samples are oxide ion conductors at
room temperature and that the mechanism of ion conduction occurs by means of hopping
between vacancies. Furthermore, ferroelectric−paraelectric transitions take place in the
materials at low temperatures.