Mechanistic investigation of ZnO nanowire growth

Abstract

Effect of high-energy electron beam irradiation on the properties of ZnO thin films prepared by magnetron sputtering J. Appl. Phys. 105, 123509 (2009) ZnO nanowire ͑NW͒ growth mechanism was investigated in a nonvapor and noncatalytic approach for the controlled NW synthesis in a second time scale. The experimental results showed what ZnO NW growth was determined by migration of zinc interstitials and vacancies in a ZnO layer, which should be also considered in other synthesis techniques and mechanisms. The mechanism of the ZnO NW growth was explained as due to the advantageous diffusion through grain boundaries in ZnO layer and crystal defects in NWs. Additionally, on the basis of photoluminescence measurements, a feasible application of as-produced wires for optoelectronic devices was demonstrated.

In-situ visualization of a super-accelerated synthesis of zinc oxide nanostructures through CO2 laser heating

“…4(b) shows a broad green band peak at around 495 nm in addition to a strong near-band-edge UV emission peak at around 388 nm. This room temperature PL result is quite similar to that of fast grown ZnO nanowires reported by Rackauskas et al [45] using the resistive heating method ; however, the green band emission originally at around 510 nm was slightly blue-shifted to 495 nm, and the full widths at half maximum (FWHM) of the PL peaks ( Fig. 4(b)) were both larger.…”

Selective lateral ZnO nanowire growth by surface diffusion on nanometer scale–patterned alumina on silicon

“…The growth rate of NWs at 1.25 min, also being the growth rate of tip segments at that time, reaches maximum at 543 nm/min, which is close to that of ZnO NWs having a surface diffusioninduced growth at 700°C. 42,43 After this moment, base segments start to grow and stop the fast growth of tip segments as the base segments consume most of the ZnO source material before it diffuses to the tip segments. The lack of tip growth also shows that negligible Zn/ZnO intermediate surface species is formed on the ZnO NW surface in these growth conditions but requires the Al 2 O 3 surface.…”

Zinc oxide formation in galvanized metallic wire by simple selective growth method

“…But the material availability was not enough to further growth. So, at higher temperature, the size of ZnO grains becomes larger [35] so that there was less grain boundary space for rapid diffusion to occur [36]. In some conditions, the core material can also get oxidized and form iron oxide (Fe 3 O 4 ) due to restriction of heat dissipation.…”