Melting phenomena and pulsed-laser annealing in semiconductors

Abstract

Annealing of displacement damage (amorphous as welI as layers containing only dislocation loops), dissolution of boron precipitates, broadening of dopant profiles, and the formation of constitutional supercooling cells have been studied in laser annealed silicon. These samples were irradiated with laser pulses (A. = 0.485,um, E = 0.7-1.25 1 cm-2 , r = 9 ns), the same as those used by Compaan and coworkers for Raman temperature measurements. In contrast to their conclusion, present results can be interpreted only on the basis of a melting model. PACS numbers: 61.16.Di, 66.1O.Cb, 61.70.Rj, 61.70.Tm 15 X 10-9 A, 5,urn in diameter) was raster scanned over a 7121

Au-rich filamentary behavior and associated subband gap optical absorption in hyperdoped Si

“…The surface cells then become better defined with increasing Au dose. The general appearance of the cells is consistent with previous reports on transition-metal-hyperdoped Si that had undergone cellular breakdown, in which the surface cell walls are shown to be decorated with segregated or precipitated impurities [18,29,30]. However, as we demonstrate below, this surface cellular structure does not necessarily imply a subsurface cellular network for Au in Si.…”

A low energy electron beam annealing system: Design, capability and use

“…All anneals were restricted to the solid phase to avoid damage associated with beam-induced melting (Narayan 1981). The CHEOPS system has been used most extensively to anneal ion implanted polycrystalline silicon.…”