Annealing of displacement damage (amorphous as welI as layers containing only dislocation loops), dissolution of boron precipitates, broadening of dopant profiles, and the formation of constitutional supercooling cells have been studied in laser annealed silicon. These samples were irradiated with laser pulses (A. = 0.485,um, E = 0.7-1.25 1 cm-2 , r = 9 ns), the same as those used by Compaan and coworkers for Raman temperature measurements. In contrast to their conclusion, present results can be interpreted only on the basis of a melting model. PACS numbers: 61.16.Di, 66.1O.Cb, 61.70.Rj, 61.70.Tm 15 X 10-9 A, 5,urn in diameter) was raster scanned over a 7121
Residual damage in the form of point defect clusters and amorphous regions has been investigated in ion and neutron irradiated silicon specimens. Annealing of this damage during conventional heating, flame annealing, and pulsed laser irradiation has been studied by plan-view and cross-section electron microscopy techniques. These results provide detailed information on annealing mechanisms, and emphasize the characterization of damage in the as-irradiated state.
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