Membrane-Transistor Cable

Abstract

An ionic−electronic system was assembled by coating a linear array of 48 field-effect transistors in silicon with a bimolecular layer of lipid and gramicidin. A thin film of electrolyte (depth ∼80 μm) was used as a spacer. A dc voltage was applied to one end of the core−coat conductor formed by membrane and electrolyte. The transistors recorded the transmission along the cable. A change of the density of open channels was determined from the change of the voltage profile on the basis of Kelvin's cable equation. The system is the basis for a development of bioelectronic transducers and for the study of nonlinear phenomena in membrane cables.

Characterization of a silicon-on-insulator based thin film resistor in electrolyte solutions for sensor applications

“…A positive back gate voltage was chosen, as this prevents cations from diffusion into the substrate. 18 A linear response of the sensor was achieved at this voltage, even after the exposure of the surface to electrolyte solutions.…”

Silicon‐on‐Insulator Based Thin‐Film Resistor for Chemical and Biological Sensor Applications

“…The working point was chosen at a backgate voltage of 16 V. This positive bias of the substrate with respect to the electrolyte also reduced the drift of the signal due to diffusion of alkali ions into the oxide. [16] Figure 4 shows the change in resistance after exposure to different poly-L-lysine concentrations.…”

Field-effect detection using phospholipid membranes

“…They described a silicon-based field-effect transistor (FET) system that allowed the detection of ion current through black lipid membranes [50]. Their system consisted of an array of multiple FETs to which a polyimide groove with a depth of ∼80 µm was attached.…”