Memory Behavior of an MNS Capacitor

Pao, H.C.; O'Connell, Maurice R.

doi:10.1063/1.1651983

Cited by 44 publications

(10 citation statements)

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“…Many workers19, [29][30][31] have pointed out this instability for silicon nitride films. Features-of trapping instability in pyrolytic silicon nitride from work of Deal et a13 0 are shown in Fig.…”

Section: Interface Electronic Trappingmentioning

confidence: 98%

A Review of Instability Mechanisms in Passivation Films

Kerr

1970

8th Reliability Physics Symposium

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Over the past ten years a number of single and double-layer insulator structures have been studied for passivation of semiconductor device surfaces. This paper reviews the various charge instability mechanisms associated with these structures. These include ionic drift, polarization, slow electronic trapping, and double-layer effects. The known dependence of these effects on processing and material parameters is discussed and the current state-of-the-art for controlling these instabilities is reviewed.

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Section: Interface Electronic Trappingmentioning

confidence: 98%

A Review of Instability Mechanisms in Passivation Films

Kerr

1970

8th Reliability Physics Symposium

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“…The equations describing the memory behavior of the MAOS structure are Ko Eo --ga Ea = Q~/eo [1] Xo Eo -~-Za Ea = Vc [2] 0 Jo (Vc, t) --Ja (Vc, t) = --Q~ (Vc, t) [3] ot where Ko, Eo, Jo, Xo and Ka, Ea, Ja, Xa are the relative dielectric constants, electric fields, current densities, and thicknesses of the silicon dioxide and the aluminum oxide layers respectively, eo is the permittivity of free space. Qi is the charge stored at the two insulator interface and can be related to the flat-band voltage Vfb of the MAOS structure by the equation 1…”

Section: J Electrochem Sot: Solid State Sciencementioning

confidence: 99%

“…Most of the attention has been focused on charge storage in MNOS (metal-silicon nitride-thermally grown silicon dioxide-silicon) structures (1)(2)(3)(4)(5)(6)(7)(8)(9)(10)(11). The memory effect is characterized by a shift in the flat-band voltage of the MNOS capacitor under application of a stress field above a certain threshold.…”

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confidence: 99%

Conduction in Al[sub 2]O[sub 3] Films and Charge Storage in MAOS Structures

Salama

1971

J. Electrochem. Soc.

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The conduction characteristics of aluminum oxide films deposited by rf sputtering on silicon substrates and ranging from 400-600A in thickness were measured over a range of temperatures. It was found that the current transport is essentially bulk limited and independent of the film thickness, the electrode material, and the polarity of the electrode. The three processes which affect the conduction through these films were found to be: Poole-Frenkel emission, field ionization, and trap hopping. The various parameters such as temperature and gate electrode affecting the charge storage in MAOS memory elements, were investigated using an automatic measurement set up and were related to the conduction characteristics of the two insulating layers. The memory elements consisted of 400-600A thick A1203 films deposited by rf sputtering on thermally grown SiO2 layers 50A thick. The charging and memory retention characteristics of the MAOS structure were also investigated. The effect of charge transport across the silicon dioxide on the surface state density at the Si-SiO2 interface was also observed.

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“…The MNOS memory transistor is similar to an ordinary field effect transistor except that the gate insulator is composed of two layers of different chemical composition (3)(4)(5). A schematic diagram of the device is shown in Figure 1.…”

Section: Introductionmentioning

confidence: 99%