Memristors-based Ternary Content Addressable Memory (mTCAM)

Liu, Zheng; Shin, Sangho; Kang, Sa-Ouk

doi:10.1109/iscas.2014.6865619

Cited by 10 publications

(5 citation statements)

References 10 publications

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“…As introduced in the previous sections, the probability of error in searching the Re-TCAM can be defined as the probability of finding the full bit-line match resistance/voltage less than a predefined threshold based resistance/voltage or finding the one-mismatch bit-line resistance/voltage higher than that threshold. Figure 8 shows the variation of the probability of error (PoE R ) using the developed R th in Equation (26) and the variation of the probability of error (PoE R S ) using another resistance based-threshold defined as the geometric mean between R fm and R 1mm R th S = ffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi ffi R f m Á R 1mm p À Á . Clearly, for a particular W under a specific Tolerance, PoE R is less than PoE R S .…”

Section: Probability Of Error Analysismentioning

confidence: 99%

“…The designs differed in the numbers of memristors and transistors employed to constitute the bit‐cell memory in the CAM array. Different bit‐cell arrangements of possible Re‐TCAM structures with SRAM 8T‐2M (8‐Transistors 2‐memristors), 24 SRAM‐6T‐2M, 25 SRAM‐5T‐2M, 26 Re‐CAM‐5T‐2M, 27 and Re‐CAM‐2T‐2M 28 were introduced. The 2T2M bit‐cell design is perceived as the densest and efficient circuit topology, primarily for Re‐TCAM.…”

Section: Introductionmentioning

confidence: 99%

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Variability analysis of resistive ternary content addressable memories

Bahloul

Fouda

Barraj

et al. 2020

Circuit Theory & Apps

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Resistive ternary content addressable memories (Re-TCAMs) are considered a potential platform for in-memory associative processing. Re-TCAM permits the store and process of the data in the same physical area, allowing inmemory computing. Given the unique properties of the non-volatile memristive device, Re-TCAM is capable of low search energy, large-scale storage, and massively parallel processing. However, like any other semiconductor, memristor as a nanodevice suffers from fabrication process imperfections that provoke a significant variance in their high (R H) and low (R L) resistance states. These variations might lead to the malfunction of the Re-TCAM array and affect its performance and reliability. This paper proposes a simplified mathematical formulation of the memristor state variability for 2T2M bit-cell-based Re-TCAM array. We present a comprehensive statistical design, considering different circuit parameters and variance effects, such as tolerance of memristance variation, the memristor ratio (α = R H =R L), transistor technology, and memory width. The impact of these parameters on the performance is formulated as the probability of error is extensively studied, and a closed-form expression for the optimal threshold voltage is derived. The utility of the presented investigation is illustrated using a design example with real device parameters.

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Section: Probability Of Error Analysismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Variability analysis of resistive ternary content addressable memories

Bahloul

Fouda

Barraj

et al. 2020

Circuit Theory & Apps

View full text Add to dashboard Cite

show abstract

“…It greatly decreases the distance between logic and memory as well as increases the number of connections between them by merging several memory layers, approaching the realization of an intelligent system, which could have memory and logic merged. Table. III Performance comparison of TCAMs associated with different types of storage memories [28]- [30] …”

Section: Discussionmentioning

confidence: 99%

Magnetoelectric Random Access Memory-Based Circuit Design by Using Voltage-Controlled Magnetic Anisotropy in Magnetic Tunnel Junctions

Wang

Lee

Amiri

2015

IEEE Trans. Nanotechnology

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We introduce a magnetoelectric junction driven by voltage-controlled magnetic anisotropy (VCMA-MEJ) as a building block for a range of low-power memory application. We present and discuss specifically two applications, magnetoelectric random access memory (MeRAM) and ternary contentaddressable memory (TCAM). The MEJ differs from a magnetic tunnel junction (MTJ) in that electric field is used to induce switching in lieu of substantial current flow in MTJ. Electric-fieldcontrol of magnetism can dramatically enhance the performance of magnetic memory devices in terms of switching energy efficiency and switching speed. The development of such an energy-efficient and ultra-fast memory has a potential to change the paradigm of a hierarchical memory system in the conventional computer architecture. By combining speed, low power, and high density, electric-field-controlled magnetic memory combines features of multiple separate memory technologies used in today's memory hierarchy. The performance of a VCMA-MEJs based MeRAM, especially in the case of one access transistor associated with one MEJ (1T-1R) structure, is evaluated by comparing it with that of phase-change RAM (PCRAM), resistive RAM (ReRAM), and spin transfer torque RAM (STT-RAM). MeRAM can achieve ultra-fast switching (<1 ns), low switching energy (~1 fJ), and compact cell size of 4 with a diode access device, as well as nonvolatility. For another application, we propose the VCMA-MEJ based TCAM, which will be referred to as MeTCAM, consisting of 4T-2MEJs. Since MeTCAM fully exploits the low-power and highdensity features of the VCMA effect both in write and search operation modes, it obtains a fast searching speed (0.2 ns) with the smallest cell area ( ) compared to previous works.Keywords-non-volatile memory, voltage-controlled magnetic anisotropy (VCMA), magnetoelectric junction (MEJ), magnetic tunnel junction (MTJ), magnetoelectric random access memory (MeRAM), ternary content-addressable memory (TCAM)

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“…To overcome these obstacles, several studies proposed hybrid memristor-CMOS based TCAM using transistors as the comparison unit and emerging non-volatile memories as the storage element rather static random access memory (SRAM). [14][15][16][17][18][19][20][21][22] Compared with traditional CMOS-based TCAM, these hybrid designs have higher capacity and lower search energy.…”

Section: Introductionmentioning

confidence: 99%

A novel ternary content addressable memory design based on resistive random access memory with high intensity and low search energy

Han¹,

Shen²,

Huang³

et al. 2018

Jpn. J. Appl. Phys.

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A novel ternary content addressable memory (TCAM) design based on resistive random access memory (RRAM) is presented. Each TCAM cell consists of two parallel RRAM to both store and search for ternary data. The cell size of the proposed design is 8F 2 , enable a >60' cell area reduction compared with the conventional static random access memory (SRAM) based implementation. Simulation results also show that the search delay and energy consumption of the proposed design at the 64-bit word search are 2 ps and 0.18 fJ/bit/search respectively at 22 nm technology node, where significant improvements are achieved compared to previous works. The desired characteristics of RRAM for implementation of the high performance TCAM search chip are also discussed.

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Memristors-based Ternary Content Addressable Memory (mTCAM)

Cited by 10 publications

References 10 publications

Variability analysis of resistive ternary content addressable memories

Variability analysis of resistive ternary content addressable memories

Magnetoelectric Random Access Memory-Based Circuit Design by Using Voltage-Controlled Magnetic Anisotropy in Magnetic Tunnel Junctions

A novel ternary content addressable memory design based on resistive random access memory with high intensity and low search energy

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