Mesa-structures and Focal Plane Arrays based on epitaxially grown InSb layers

Boltar, K. O.; Lopuhin, A. A.; Vlasov, Pavel; Iakovleva, N. I.

doi:10.51368/2307-4469-2021-9-6-513-522

Cited by 3 publications

(2 citation statements)

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“…The objects under study were PDs ranging in size from 30 × 30 to 100 × 100 µm based on Cd x Hg 1−x Te/Si mesa-structure at x = 0.235 grown by molecular-beam epitaxy. In [9], parameters of p-i-n PD matrices in the format of 320 × 256 elements with the spacing of 30 µm based on InGaAs of the responsivity in the spectral range of 0.9-1.7 µm were investigated. Matrices of responsive elements were made according to planar and mesa-technology.…”

Section: Introductionmentioning

confidence: 99%

High-responsivity silicon p–i–n mesa-photodiode

Kukurudziak

Майструк

2023

Semicond. Sci. Technol.

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Silicon p-i-n mesa-photodiodes have been made. Different variants of masking coating during etching of the mesa-profile have been studied. Comparative characteristic of photodetectors manufacture by planar- and mesa-technology have been carried out. Defect formation on the surface of silicon substrates in different options of technology was investigated. Parameters of photodiodes manufactured by planar and meso technology were investigated. Photodiodes with a meso structure have higher responsivity and lower capacitance than samples made by conventional planar technology.

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Section: Introductionmentioning

confidence: 99%

High-responsivity silicon p–i–n mesa-photodiode

Kukurudziak

Майструк

2023

Semicond. Sci. Technol.

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“…This can be implemented by reducing the temperature of diffusion and oxidation operations, as well as by reducing the number of actual thermal operations. This can be implemented using mesa technology [7,8], as well as diffusion from liquid diffusants in contrast to classical planar technology [2,6]. Accordingly, the goal of this work is the development and manufacture of silicon p-i-n PDs with a reduced number of thermal operations, compared to classical technology, which will minimize the degradation of the electro-physical characteristics of silicon and improve the parameters of the PDs.…”

Section: Introductionmentioning

confidence: 99%

Технологія кремнієвих p-i-n фотодіодів зі зменшеною кількістю термічних операцій

Kukurudziak

2023

SISIOT

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The main parameters of the p-i-n photodiodes (PD) are responsivity, dark current and capacity of responsive elements (RE). To ensure the maximum values of the specified parameters, it is necessary to use defect-free silicon with the maximum values of resistivity and life time of minor charge carriers. These characteristics of the starting material degrade during high-temperature thermal operations. Therefore, it is worth using a technology that allows you to avoid the degradation of silicon characteristics. This can be implemented by reducing the temperature of diffusion and oxidation operations, as well as by reducing the number of actual thermal operations. The samples were made according to two versions of the technology: diffusion-planar using two-stage diffusion of phosphorus from planar sources, and mesotechnology using one-stage diffusion of phosphorus using liquid PCl3 diffusant. After manufacturing, the PD parameters were compared. The use of mesotechnology with one-stage diffusion of phosphorus made it possible to reduce the number of thermal operations by two times compared to serial technology. The experimental samples had a pulse responsivity at a wavelength of 1.064 μm of 0.47-0.50 A/W, and the serial ones had a responsivity of 0.45-0.48 A/W. The difference in responsivity is caused by the difference in the life time of minor charge carriers, since in the case of the proposed technology, the degree of degradation of the life time of minor charge carriers during the manufacturing process is smaller. After selective etching, it was seen that when using a liquid diffusant, the density of dislocations on the crystal surface is much higher than when using planar sources of phosphorus. Due to the higher density of dislocations, the experimental samples had higher dark currents, but when using a low bias voltage, the difference in dark currents is insignificant. The RE capacity of the experimental samples was slightly lower than that of the serial ones. This can be explained by the difference in the resistivity of the i-region of the final crystals.

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