“…Since the Si carbide (SiC), which can cause resistance at Si anodes, can be formed from Si and carbon above 900 °C, we carbonized the pitch below 900 °C. As Figure 2 a shows, the structural changes in the pitch were investigated using various analytical tools, including elemental analysis (EA), thermogravimetric analysis (TGA), 13 C‐nuclear magnetic resonance ( 13 C‐NMR), and matrix‐assisted laser desorption/ionization time‐of‐flight mass spectroscopy (MALDI‐TOF MS) …”