Metal Acetylacetonate Series in Interface Engineering for Full Low‐Temperature‐Processed, High‐Performance, and Stable Planar Perovskite Solar Cells with Conversion Efficiency over 16% on 1 cm² Scale

Abstract

A series of metal acetylacetonates produced by a full low-temperature (below 100 °C) process are successfully employed to obtain both "multistable" and high-performance planar-inverted perovskite solar cells. All the three kinds of champion cells in small area exhibit over 18% in conversion-efficiency with negligible hysteresis, along with a conversion efficiency above 16% for planar PSCs in an aperture area of over 1 cm .

Cesium Doped NiOx as an Efficient Hole Extraction Layer for Inverted Planar Perovskite Solar Cells

“…[53] Cs:NiO x films were prepared by adding Cs precursors at different molar ratios (0.5-3 mol%) (see more details in the Experimental Section). [21] The MAPbI 3 perovskite films were fabricated by one-step solvent engineering method with some modification (see detailed synthesis route in the Experimental Section). ZrAcac serves as an electrode interface layer to reduce energy barrier for electron extraction.…”

“…ZrAcac serves as an electrode interface layer to reduce energy barrier for electron extraction. The energy level arrangements of various functional layers in the PSCs are shown at Figure 1c, where the energy levels of NiO x , MAPbI 3 , PC 61 BM, and ZrAcac/Ag are cited from literature, [21,53] and the work function of the NiO x and Cs doped NiO x are calculated from the ultraviolet photoelectron spectroscopy (UPS) measurement, which will be discussed in detail later. [54] As shown in Figure 1b, the cross-section scanning electron microscopy (SEM) image demonstrates that a dense, compact, and uniform perovskite films with thickness of ≈310 nm can be obtained, and clearly distinguishes the Cs:NiO x HEL and PC 61 BM EEL in the device.…”

“…A clear increase in photovoltage decay time is observed for Cs:NiO x devices, which is consistent with reduced recombination at the HEL/ perovskite interface. [21,37,41] Finally, we monitored the stability of the encapsulated Cs:NiO x devices stored at argon glove box (H 2 O < 0.1 ppm, O 2 < 30 ppm), and the devices were taken out and tested at ambient environment.…”

Interface Engineering for Highly Efficient and Stable Planar p‐i‐n Perovskite Solar Cells

“…Recently, Chen et al successfully adopted a series of metal acetylacetonates (TiAcac, ZrAcac, and HfAcac) as cathode interfacial layers to achieve stable and efficient PVSCs in configuration of ITO/NiO x /MAPbI 3 /PCBM/MAcac/Ag. [152] The optimal PCE of 18.69% was achieved for the ZrAcac-based PVSCs. Those metal acetylacetonates were able to effectively reduce interface energy barrier by so called dipole effect, and to enhance the electrons extraction by forming a barrier-free cathode interface.…”

A Generalized Crystallization Protocol for Scalable Deposition of High‐Quality Perovskite Thin Films for Photovoltaic Applications

“…The statistic device performance based on 15 solar cells from two batches is shown in Figure S13 of the Supporting Information, suggesting excellent reproducibility of the device fabrication and high quality of the blade-coated perovskite films. [44] We therefore derived the series resistance (R S ) and parallel resistance (R P ) of the 1 cm 2 device from the measured J-V curves. [44] We therefore derived the series resistance (R S ) and parallel resistance (R P ) of the 1 cm 2 device from the measured J-V curves.…”