Metal Composition and Polyethylenimine Doping Capacity Effects on Semiconducting Metal Oxide–Polymer Blend Charge Transport

Huang, Wei; Guo, Peijun; Zeng, Li; Li, Ran; Wang, Binghao; Wang, Gang; Zhang, Xinan; Chang, Robert P. H.; Yu, Junsheng; Bedzyk, Michael J.; Marks, Tobin J.; Facchetti, Antonio

doi:10.1021/jacs.8b01252

Cited by 41 publications

(54 citation statements)

References 78 publications

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“…3 C and D). The conventional CS IGZO film with 300°C/20-min annealing of each layer yields ρ avg = 1.5 e Å −3 , similar to previous reports (10,40). While the ρ avg decreases to a greater extent for 300°C/60 s-annealed CS IGZO films (1.42 e Å −3 ), it increases to 1.49 and 1.53 e Å −3 for FA-CS and P-FA-CS processed IGZO films.…”

Section: Resultssupporting

confidence: 89%

Expeditious, scalable solution growth of metal oxide films by combustion blade coating for flexible electronics

Wang

Guo

Zeng

et al. 2019

Proc. Natl. Acad. Sci. U.S.A.

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Metal oxide (MO) semiconductor thin films prepared from solution typically require multiple hours of thermal annealing to achieve optimal lattice densification, efficient charge transport, and stable device operation, presenting a major barrier to roll-to-roll manufacturing. Here, we report a highly efficient, cofuel-assisted scalable combustion blade-coating (CBC) process for MO film growth, which involves introducing both a fluorinated fuel and a preannealing step to remove deleterious organic contaminants and promote complete combustion. Ultrafast reaction and metal–oxygen–metal (M-O-M) lattice condensation then occur within 10–60 s at 200–350 °C for representative MO semiconductor [indium oxide (In2O3), indium-zinc oxide (IZO), indium-gallium-zinc oxide (IGZO)] and dielectric [aluminum oxide (Al2O3)] films. Thus, wafer-scale CBC fabrication of IGZO-Al2O3 thin-film transistors (TFTs) (60-s annealing) with field-effect mobilities as high as ∼25 cm2 V−1 s−1 and negligible threshold voltage deterioration in a demanding 4,000-s bias stress test are realized. Combined with polymer dielectrics, the CBC-derived IGZO TFTs on polyimide substrates exhibit high flexibility when bent to a 3-mm radius, with performance bending stability over 1,000 cycles.

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Section: Resultssupporting

confidence: 89%

Expeditious, scalable solution growth of metal oxide films by combustion blade coating for flexible electronics

Wang

Guo

Zeng

et al. 2019

Proc. Natl. Acad. Sci. U.S.A.

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“…Additionally, PEI interfacial layers have been shown to serve as “universal” agents to lower electrode work functions (WFs) of several electrode materials . This result, combined with recent studies demonstrating the generality of PEI doping to enhance MO TFT mobilities beyond In 2 O 3 and to lower the WFs, set the stage for the present communication …”

Section: Performance Metrics Of the Indicated Tft Devices On Si/sio2 mentioning

confidence: 82%

“…These pioneering studies show that MO heterojunctions having different WFs/Fermi energies can yield 2DEG‐enhanced device properties. Inspired by these results and considering the properties of the aforementioned PEI:MO blends, an intriguing question arises as to whether PEI doping might tune the In 2 O 3 WF to achieve a 2DEG with pristine In 2 O 3 for high‐performance TFTs. Furthermore, one could then ask about the role of PEI in tuning performance parameters, and whether such devices are stable under standard operating conditions.…”

Section: Performance Metrics Of the Indicated Tft Devices On Si/sio2 mentioning

confidence: 99%

Polymer Doping Enables a Two‐Dimensional Electron Gas for High‐Performance Homojunction Oxide Thin‐Film Transistors

et al. 2018

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deposition (PLD), and radiofrequency sputtering. [2,[11][12][13] Nevertheless, solutionprocessing of MO precursors holds significant promise for lower cost production and compatibility with flexible substrates. [2,9,14,15] In this regard, indium oxide (In 2 O 3 ) is one of the most investigated solution-processed oxide semiconductors, [7,[16][17][18][19][20][21] however, the carrier density of pristine In 2 O 3 is difficult to control and In 2 O 3 films are usually polycrystalline, limiting their performance uniformity over large areas as well as mechanical flexibility. [22] To address both of these issues, metals such as Zn and/or Ga are added to In 2 O 3 , enabling the growth of amorphous MO thin films with enhanced electronic properties and ultimately affording far more stable TFT characteristics. [22][23][24][25][26] Recently, we reported a new strategy for high performance, near-zero threshold voltage (V Th ), bias stress-stable, and amorphous In 2 O 3 films and TFTs by simply doping the In 2 O 3 with an electrically insulating polymer such as poly(4-vinylphenol) (PVP) or polyethylenimine (PEI) to afford amorphous MO:polymer blend semiconducting nanocomposites. [2,17,22] The attraction of electron-rich PEI versus PVP is that the TFT High-performance solution-processed metal oxide (MO) thin-film transistors (TFTs) are realized by fabricating a homojunction of indium oxide (In 2 O 3 ) and polyethylenimine (PEI)-doped In 2 O 3 (In 2 O 3 :x% PEI, x = 0.5-4.0 wt%) as the channel layer. A two-dimensional electron gas (2DEG) is thereby achieved by creating a band offset between the In 2 O 3 and PEI-In 2 O 3 via work function tuning of the In 2 O 3 :x% PEI, from 4.00 to 3.62 eV as the PEI content is increased from 0.0 (pristine In 2 O 3 ) to 4.0 wt%, respectively. The resulting devices achieve electron mobilities greater than 10 cm 2 V −1 s −1 on a 300 nm SiO 2 gate dielectric. Importantly, these metrics exceed those of the devices composed of the pristine In 2 O 3 materials, which achieve a maximum mobility of ≈4 cm 2 V −1 s −1 . Furthermore, a mobility as high as 30 cm 2 V −1 s −1 is achieved on a high-k ZrO 2 dielectric in the homojunction devices. This is the first demonstration of 2DEG-based homojunction oxide TFTs via band offset achieved by simple polymer doping of the same MO material. Thin-Film TransistorsThe ORCID identification number(s) for the author(s) of this article can be found under https://doi.As a consequence of their outstanding charge transport properties and excellent optical transparency, metal oxide thin-film transistors (MOTFTs) have been heavily investigated for applications in state-of-the-art flat panel display technologies and next-generation electronics. [1][2][3][4][5][6][7][8][9][10] To date, several growth techniques have been utilized to fabricate MO films for TFTs including atomic layer deposition (ALD), pulsed-laser

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“…By using transparent dielectric/electrode materials and AryLite substrates, all‐amorphous and “invisible” oxide/polymer TFTs were integrated with good electrical performance ( μ FE ≈ 11 cm 2 V −1 s −1 ) and mechanical flexibility (≈10% degraded after 100 bending/relaxing cycles). Subsequently, the same group explored doping with small amounts of an electron‐rich polymer, polyethylenimine, and achieved superior transistor performance, including the higher mobility than that of pristine In 2 O 3 TFTs …”

Section: Metal Oxide Tftsmentioning

confidence: 99%

Printable Semiconductors for Backplane TFTs of Flexible OLED Displays

Zhu

Shin

Liu

et al. 2019

Adv Funct Materials

165

130

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Studies on printable semiconductors and technologies have increased rapidly over recent decades, pioneering novel applications in many fields, such as energy, sensing, logic circuits, and information displays. The newest display technologies are already turning to metal oxide semiconductors, i.e., indium gallium zinc oxide, for the improvements needed to drive active matrix organic light-emitting diodes. Convenience and portability will be realized with flexible and wearable displays in the future. This report summarizes recent progress on the development of solution-processed thin film transistors, especially those deposited at low temperatures for next-generation flexible smart displays. The first part provides an overview on the history and current status of displays. Then, recent advances in state-of-the-art solution-processed transistors based on different semiconductors are presented, including metal oxides, organic materials, perovskites, and carbon nanotubes. Finally, conclusions are drawn and the remaining challenges and future perspectives are discussed. a large common cathode (opaque metal). This means that the light emission goes through the backplane and the TFT arrays are able to block the light, resulting in the reduced emission fill factor of the display. This mode is also called bottom emission. One effective way to avoid the light obstruction from TFTs in the backplane is to use top-emitting OLEDs, which have a transparent cathode. [2] In 2004, Pennsylvania State University demonstrated the first flexible phosphorescent AMOLED display with hydrogenated amorphous silicon on a 4 in. polyimide (PI) substrate. [7] One year later, a 48 × 48 organic pentacene TFT-driven AMOLED display on a polyethylene terephthalate (PET) substrate was reported by the same group. [8] In 2005, by employing a top-emission structure, researchers at Sony Corp. demonstrated the first full-color imaging on a flexible AMOLED with a pixel resolution of 80 ppi. [9] In 2013, Samsung Electronics showed curved OLED TVs for the first time. Two years later, the same company unveiled a smartphone with a curved edge display (Galaxy S6 Edge), which used touch sensors to improve the user interface and device design. Most recently, LG Display succeeded in developing the world's first large-size 77 in. transparent and flexible OLED display, which could be rolled up to a radius of 80 mm. [10] The ideal flexible AMOLED backplane should be robust, rollable/bendable, capable of complementary metal oxide semiconductor (CMOS) operation, and should lend itself to low-cost manufacturing. To advance toward next-generation flexible AMOLED displays, two key technological goals should be satisfied during fabrication. One is to develop TFT backplanes with good uniformity, stability, and electrical performance. Amorphous silicon (a-Si) TFTs are well known for their uniform electrical characteristics (µ FE < 1 cm 2 V −1 s −1 and I on /I off > 10 6 ) and have achieved great success in flat-panel LCD displays. However, the relatively low µ FE and the lig...

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Metal Composition and Polyethylenimine Doping Capacity Effects on Semiconducting Metal Oxide–Polymer Blend Charge Transport

Cited by 41 publications

References 78 publications

Expeditious, scalable solution growth of metal oxide films by combustion blade coating for flexible electronics

Expeditious, scalable solution growth of metal oxide films by combustion blade coating for flexible electronics

Polymer Doping Enables a Two‐Dimensional Electron Gas for High‐Performance Homojunction Oxide Thin‐Film Transistors

Printable Semiconductors for Backplane TFTs of Flexible OLED Displays

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