Metal-insulator transitions in epitaxial LaVO<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>3</mml:mn></mml:msub></mml:math>and LaTiO<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>3</mml:mn></mml:msub></mml:math>films

He, Chao; Sanders, T. D.; Gray, Matthew; Wong, Franklin J.; Mehta, Virat; Suzuki, Yuri

doi:10.1103/physrevb.86.081401

Cited by 75 publications

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“…The surface of SrTiO 3 substrates may become reduced, 6 and this affects the transport properties of the LaVO x /SrTiO 3 samples dramatically. Temperature-dependent transport properties of LaVO x films grown on SrTiO 3 , showing either metallic 4,8 or an overlapping two-component metallic and semiconducting behavior, 7-9 are influenced by contributions from the oxygen-deficient substrate. Similar issues have been encountered for the assessment of the properties of epitaxial LaTiO 3 thin films, whose growth also requires high vacuum conditions.…”

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confidence: 99%

“…8 The resistance of the LaVO x films on DSO substrates increased with decreasing temperature and only the resistivity data down to about 180 K were shown by He et al 8 Although the transport properties of the LaVO 3 films grown on DSO exhibit the semiconducting behavior expected for a Mott insulating material, DyScO 3 crystals are paramagnetic 12 and hinder strongly the magnetic measurements of LaVO 3 films. Temperature-dependent magnetic susceptibility and magnetization measurements of LaVO 3 single crystals yielded direct information about the antiferromagnetic order and the corresponding transition temperatures.…”

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confidence: 99%

“…Epitaxial growth of LaVO 3 films has been achieved by a variety of techniques, predominantly by PLD 4,5,[7][8][9]21 or by molecular beam epitaxy. 22 The stabilization of the perovskite LaVO 3 phase in thin films was successful by performing the growth in either high vacuum 4,5,[7][8][9]22 or in pure Ar or Ar/H 2 atmosphere.…”

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confidence: 99%

“…22 The stabilization of the perovskite LaVO 3 phase in thin films was successful by performing the growth in either high vacuum 4,5,[7][8][9]22 or in pure Ar or Ar/H 2 atmosphere. 9,21 We fabricated the films by PLD using a KrF excimer laser.…”

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Probing orbital ordering in LaVO3 epitaxial films by Raman scattering

et al. 2016

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Single crystals of Mott-Hubbard insulator LaVO3 exhibit spin and orbital ordering along with a structural change below ≈140 K. The occurrence of orbital ordering in epitaxial LaVO3 films has, however, been little investigated. By temperature-dependent Raman scattering spectroscopy, we probed and evidenced the transition to orbital ordering in epitaxial LaVO3 film samples fabricated by pulsed-laser deposition. This opens up the possibility to explore the influence of different epitaxial strain (compressive vs. tensile) and of epitaxy-induced distortions of oxygen octahedra on the orbital ordering, in epitaxial perovskite vanadate films.

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Probing orbital ordering in LaVO3 epitaxial films by Raman scattering

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“…8 It is reported that the compressive LaTiO 3 films may even undergo an insulator-to-metal transition. 9,10 Moreover, the strain effects depend on not only the simple lattice constants (e.g. compressive or tensile), but also the lattice orientations.…”

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Orientation-dependent magnetism and orbital structure of strained YTiO3 films on LaAlO3 substrates

Huang

Dong

2015

Journal of Applied Physics

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The strain tuned magnetism of YTiO 3 film grown on the LaAlO 3 (110) substrate is studied by the method of the first principles, and compared with that of the (001)-oriented one. The obtained magnetism is totally different, which is ferromagnetic for the film on the (110) substrate but A-type antiferromagnetic on the (001) one. This orientation-dependent magnetism is attributed to the subtle orbital ordering of YTiO 3 film. The d xz /d yz -type orbital ordering is predominant for the (001) one, but for the (110) case, the d xy orbital is mostly occupied plus a few contribution from the d xz /d yz orbital. Moreover, the lattice mismatch is modest for the (110) case but more serious for the (001) one, which is also responsible for this contrasting magnetism.Recent advances in thin-film deposition techniques have made it possible to fabricate high quality epitaxial oxide thin films and heterostructures. Consequently, it becomes a very promising route to engineer physical properties of oxide thin films by strain. One of the strain effects is that the ground state phases and phase boundaries can be tuned away from the corresponding bulk constituents, which enables us to design "artificial" states with desired properties which are not available in bulk materials. [1][2][3][4] Generally, the strain is imposed by the constraint, namely coherently grown films share the same inplane lattice parameters with the underlying substrates. 5 Especially for the perovskites, due to the strain, the tilting and rotations of the oxygen octahedrons will change, which are crucial to determine the properties of perovskite oxides. 6,7 For example, LaTiO 3 films grown on compressive substrates (e.g. LaAlO 3 ) are predicted to show the A-type antiferromagnetism (A-AFM). In contrast, those grown on tensile substrates (e.g. LaScO 3 ) maintain the G-type antiferromagnetism (G-AFM) as in bulk. 8 It is reported that the compressive LaTiO 3 films may even undergo an insulator-to-metal transition. 9,10 Moreover, the strain effects depend on not only the simple lattice constants (e.g. compressive or tensile), but also the lattice orientations. It has been found that the electronic properties of films can be very different when growing along different orientations. Still taking the LaTiO 3 thin films as an example, the films grown on the (001)-oriented SrTiO 3 substrates show metallic behavior, while the films grown on the (110)-oriented DyScO 3 substrates are highly insulating, although the lattice mismatches are proximate for these two subtrates. 11YTiO 3 is another interesting correlated electronic system, which is a prototypical Mott-insulator with a ferromagnetic (FM) ground state. 12 Due to the small size of Y 3+ ion, YTiO 3 has a highly distorted orthorhombic structure. 13,14 From previous studies, it is known that the lattice distortions and orbital orderings are important a) Electronic mail: sdong@seu.edu.cn to understand the FM order in YTiO 3 . 12,13 Theoretical studies revealed that the FM order in bulk is stabilized by the distorted Ti...

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X‐Ray Writing of Metallic Conductivity and Oxygen Vacancies at Silicon/SrTiO₃ Interfaces

Chikina

Caputo

Naamneh

et al. 2019

Adv Funct Materials

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Metal-insulator transitions in epitaxial LaVO3and LaTiO3films

Cited by 75 publications

References 21 publications

Probing orbital ordering in LaVO3 epitaxial films by Raman scattering

Probing orbital ordering in LaVO3 epitaxial films by Raman scattering

Orientation-dependent magnetism and orbital structure of strained YTiO3 films on LaAlO3 substrates

X‐Ray Writing of Metallic Conductivity and Oxygen Vacancies at Silicon/SrTiO₃ Interfaces

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Metal-insulator transitions in epitaxial LaVO3and LaTiO3films

Cited by 75 publications

References 21 publications

Probing orbital ordering in LaVO3 epitaxial films by Raman scattering

Probing orbital ordering in LaVO3 epitaxial films by Raman scattering

Orientation-dependent magnetism and orbital structure of strained YTiO3 films on LaAlO3 substrates

X‐Ray Writing of Metallic Conductivity and Oxygen Vacancies at Silicon/SrTiO3 Interfaces

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X‐Ray Writing of Metallic Conductivity and Oxygen Vacancies at Silicon/SrTiO₃ Interfaces