Metal-Organic Chemical Vapor Deposition of La2CuO4+x Thin Films with Gas Phase Composition Control

DeSisto, W. J.; Cukauskas, E. J.; Rappoli, B. J.; Culbertson, J. C.; Claassen, J. H.

doi:10.1002/(sici)1521-3862(199910)5:5<233::aid-cvde233>3.3.co;2-0

Cited by 2 publications

(5 citation statements)

References 14 publications

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“…An acoustic sensor was implemented downstream to a W CVD chamber where processes were carried at 10 Torr using WF 6 and H 2 gas mixtures. A real-time, in situ film thickness metrology with an error of 1.0% or less was successfully established over 30 runs carried out either under fixed process conditions or while varying the process temperatures or deposition times to simulate process and equipment variability.…”

Section: Discussionmentioning

confidence: 99%

“…Typically the processing of a wafer batch was carried out as follows: the reactor walls were initially conditioned for 1-2 h ͑determined by the chamber process history͒ by flowing WF 6 and H 2 at 10 Torr at room temperature in order to reduce the amount of water in the chamber and to passivate the walls. Typically the processing of a wafer batch was carried out as follows: the reactor walls were initially conditioned for 1-2 h ͑determined by the chamber process history͒ by flowing WF 6 and H 2 at 10 Torr at room temperature in order to reduce the amount of water in the chamber and to passivate the walls.…”

Section: Methodsmentioning

confidence: 99%

“…Gas phase measurements in CVD processes were reported using ultraviolet, [6][7][8] Fourier-transform infrared ͑FTIR͒ 9-14 and mass spectrometry. Gas phase measurements in CVD processes were reported using ultraviolet, [6][7][8] Fourier-transform infrared ͑FTIR͒ 9-14 and mass spectrometry.…”

Section: Introductionmentioning

confidence: 99%

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Real-time, in situ film thickness metrology in a 10 Torr W chemical vapor deposition process using an acoustic sensor

Henn-Lecordier

Kidder

Rubloff

et al. 2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inReal-time acoustic sensing and control of metalorganic chemical vapor deposition precursor concentrations delivered from solid phase sources In situ mass spectrometry in a 10 Torr W chemical vapor deposition process for film thickness metrology and real-time advanced process control Thickness metrology and end point control in W chemical vapor deposition process from SiH 4 / WF 6 using in situ mass spectrometry Process diagnostics and thickness metrology using in situ mass spectrometry for the chemical vapor deposition of W from H 2 / WF 6 Process gases were sampled from the outlet of a tungsten chemical vapor deposition ͑CVD͒ reactor into an Inficon Composer™ acoustic sensor for in situ chemical gas sensing and real-time film thickness metrology. Processes were carried out on an Ulvac W CVD cluster tool at 10 Torr from 340 to 400°C using a H 2 /WF 6 gas mixture. Sampled gases were compressed through a diaphragm pump up to 100 Torr as required for accurate measurements in the acoustic cell. The high depletion of the heavy WF 6 precursor ͑up to 30%͒ generated a significant variation of the average gas molecular weight and consequently of the mass-dependent resonant frequency measured by the acoustic sensor. The monitored signal was integrated over the process time, and the integrated area was correlated to the deposited W film thickness determined by ex situ measurements. The average error on this in-tool and real-time metrology was less than 1% over 30 wafers processed, either under fixed process conditions or while varying key process variables such as deposition time or temperature. A dynamic physically based simulator was also developed to validate the system response under different process conditions and demonstrate the fundamental understanding of this method. The metrology achieved represents a significant improvement over previously published data ͓L. Henn-Lecordier et al., J. Vac. Sci. Technol. A 19, 621 ͑2001͔͒ obtained on the same system but in the sub-Torr process pressure regime, where low depletion rates ͑around 3%͒ had limited the metrology to 7% error. With an error less than 1%, this in situ chemical sensing approach could be efficiently exploited for real-time course correction, e.g., using end-point film thickness control.

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Section: Discussionmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Real-time, in situ film thickness metrology in a 10 Torr W chemical vapor deposition process using an acoustic sensor

Henn-Lecordier

Kidder

Rubloff

et al. 2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…1–11 Schemes for improving control of precursor delivery in vapor deposition processes fall within two main categories: enhanced precursor delivery system design; 5,9,12–18 and closed loop control of precursor flux. 2–4,6,19–25 Metrologies that provide the time-dependent precursor concentration can contribute to both methods. In the case of delivery system design, precursor concentration measurement is desirable for efficient characterization of the flow system.…”

Section: Introductionmentioning

confidence: 99%

“…A range of optical methods have been utilized that have the potential to operate at lower pressures and with more flexibility in the sampling configuration than acoustic methods. Ultraviolet absorption-based methods 1,2,19,20,22,23,32–37 can provide high sensitivity and data acquisition rates; however, photolysis of metalorganic precursors can be of concern. Fourier transform infrared (FT-IR) spectroscopy-based methods 27,38–46 can provide species-specific information about reactants and products without concerns of precursor photolysis, but data acquisition rates can be limited.…”

Section: Introductionmentioning

confidence: 99%

Nondispersive Infrared Gas Analyzer for Vapor Density Measurements of a Carbonyl-Containing Organometallic Cobalt Precursor

et al. 2017

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A nondispersive infrared (NDIR) gas analyzer was demonstrated for measuring the vapor-phase density of the carbonyl-containing organometallic cobalt precurso μ-η-(Bu-acetylene) dicobalthexacarbonyl (CCTBA). This sensor was based on direct absorption by CCTBA vapor in the C≡O stretching spectral region and utilized a stable, broadband IR filament source, an optical chopper to modulate the source, a bandpass filter for wavelength isolation, and an InSb detector. The optical system was calibrated by selecting a calibration factor to convert CCTBA absorbance to a partial pressure that, when used to calculate CCTBA flow rate and CCTBA mass removed from the ampoule, resulted in an optically determined mass that was nominally equal to a gravimetrically-determined mass. In situ Fourier transform infrared (FT-IR) spectroscopy was performed simultaneously with the NDIR gas analyzer measurements under selected conditions in order to characterize potential spectroscopic interferences. Interference due to CO evolution from CCTBA was found to be small under the flow conditions employed here. A CCTBA minimum detectable molecular density as low as ≈3 × 10cm was calculated (with no signal averaging and for a sampling rate of 200 Hz). While this NDIR gas analyzer was specifically tested for CCTBA, it is suitable for characterizing the vapor delivery of a range of carbonyl-containing precursors.

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Metal-Organic Chemical Vapor Deposition of La2CuO4+x Thin Films with Gas Phase Composition Control

Cited by 2 publications

References 14 publications

Real-time, in situ film thickness metrology in a 10 Torr W chemical vapor deposition process using an acoustic sensor

Real-time, in situ film thickness metrology in a 10 Torr W chemical vapor deposition process using an acoustic sensor

Nondispersive Infrared Gas Analyzer for Vapor Density Measurements of a Carbonyl-Containing Organometallic Cobalt Precursor

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