Metal−Organic Chemical Vapor Deposition of Indium Selenide Thin Films

Abstract

Indium selenide (InSe) thin films have been grown at 230-420 °C by low-pressure metalorganic chemical vapor deposition (MOCVD) using the single-source precursors [( t Bu) 2 In-(µ-Se t Bu)] 2 and [(Me 2 EtC)In(µ 3 -Se)] 4 . Characterization of the films by energy-dispersive X-ray analysis (EDX) showed those grown from [( t Bu) 2 In(µ-Se t Bu)] 2 to be indium rich, while those grown from [(Me 2 EtC)In(µ 3 -Se)] 4 are stoichiometric InSe. Transmission electron microscopy (TEM) indicates that the film morphology and crystallinity are highly dependent on the precursor and the deposition temperature. At low temperatures <330 °C ball-like morphologies are observed, while deposition at 350-370 °C results in highly crystalline textured films. Use of [( t Bu)In(µ 3 -Se)] 4 as the precursor at 320-420 °C results in indium metal films. The relationship between the precursor's structure and the film's morphology and chemical composition are discussed. The efficacy of the single-source precursor approach is considered with respect to elemental composition, phase formation, and film morphology.

Atomic Layer Growth of InSe and Sb2Se3 Layered Semiconductors and Their Heterostructure

“…One of the reasons for this attenuation has been attributed to direct-to-indirect bandgap crossover, while another explanation has been attributed to the enhancement of non-radiative recombination processes in the thin flakes [15,16]. To date, InSe films have been produced mostly via chemical vapor deposition (CVD), sputtering, exfoliation, and electrodeposition [15,[17][18][19][20]. In these cases, the films are either small, on the order of a few tens of micrometers per side (exfoliation) or are composed of flakes or platelets.…”

The growth of single-phase In2Se3 by using metal organic chemical vapor deposition with AlN buffer layer

“…Of these, MOCVD, which provides single in-line process without interruption for optoelectronic devices fabrication, independent control of VI/III ratio and easy for mass production, is the most advantageous method for thin film growth of IS for applications. The synthesized singlesource precursors, such as [( t Bu) 2 In(mSe t Bu)] 2 or [(Me 2 E t C) In(m 3 -Se)] 4 , have often been used for the deposition of IS by MOCVD [13][14][15][16]. In this report, the single-phase g-In 2 Se 3 was grown on silicon (1 1 1) substrates with and without AlN buffer layer using MOCVD with dual-source precursors: trimethylindium (TMI) and hydrogen selenide (H 2 Se).…”

Preparation of CuInSe2 thin films through metal organic chemical vapor deposition method by using di-μ-methylselenobis(dimethylindium) and bis(ethylisobutyrylacetato) copper(II) precursors

“…They typically lead to different stoichiometric or seleniumdeficient compounds in a single precursor MOCVD process [18][19][20][21]. However, surprisingly, the X-ray diffraction pattern of the resulting reddish dark grey colored thin film coincides quite well with that of the known hexagonal InSe [22], in which the In:Se ratio is 1:1, and it is noteworthy that there are no other phases such as In 2 Se 3 , In 3 Se 4 , and In 2 Se as shown in Fig.…”