Metal-organic vapor-phase epitaxial growth of HgCdTe device heterostructures on three-inch-diameter substrates

Maxey, C. D.; Camplin, J. P.; Guilfoy, I. T.; Gardner, J. J.; Lockett, R. A.; Jones, C. L.; Capper, P.; Houlton, M. R.; Gordon, Neil T.

doi:10.1007/s11664-003-0048-8

Cited by 39 publications

(15 citation statements)

References 12 publications

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“…Selex ES has over 14 years' experience in the MOVPE growth of MCT by the interdiffused multilayer process (IMP) on GaAs substrates [1]. MOVPE allows control of the alloy composition (x) across the entire compositional range between CdTe and HgTe without any changes to the reactor growth conditions, allowing heterostructure and bandgap engineering approaches to achieve innovative device designs, such as the separation of the gain and absorption regions in APDs used in adaptive optics applications, achieving high breakdown voltage while maintaining high gain [2].…”

Section: Advantages Of Movpementioning

confidence: 99%

Advances in SELEX ES infrared detectors for space and astronomy

Knowles

Hipwood

Baker

et al. 2017

International Conference on Space Optics — ICSO 2014

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Section: Advantages Of Movpementioning

confidence: 99%

Advances in SELEX ES infrared detectors for space and astronomy

Knowles

Hipwood

Baker

et al. 2017

International Conference on Space Optics — ICSO 2014

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“…The growth, delineation and hybridisation technologies are very mature and have been reported in several previous papers [3][4][5][6][7][8][9][10]. FPAs exploiting this technology have been in volume production for many years with 16µm pixels and larger.…”

Section: Movpe-grown Materials and Mesa Diodesmentioning

confidence: 99%

A long-range camera based on an HD MCT array of 12μm pixels

et al. 2014

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The development of a new thermal imaging camera, for long range surveillance applications, is described together with the enabling technology. Previous publications have described the development of large arrays of 12µm pixels using Metal Organic Vapour Phase Epitaxy (MOVPE) grown Mercury Cadmium Telluride (MCT) for wide area surveillance applications. This technology has been leveraged to produce the low cost 1280x720 pixel Medium Wave IR focal plane array at the core of the new camera. Also described is the newly developed, high performance, x12 continuous zoom lens which, together with the detector, achieves an Instantaneous Field of View (IFOV) of 12.5µrad/pixel enabling long detection, recognition and identification ranges. Novel image processing features, including the turbulence mitigation algorithms deployed in the camera processing electronics, are also addressed. Resultant imagery and performance will be presented.

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“…Much of the initial work on the reactor was carried out on 3-inch diameter GaAs wafers and the heterostructures were aimed at achieving increased operating temperature devices [5][6][7] so that the issue of thermal expansion differences between the Si ROIC and the IRFPA were negated. However, when cooled operation is required, a back-thinning approach similar to that employed in indium antimonide (InSb) device technologies can be used to overcome the expansion coefficient problems.…”

Section: Growth On Gaasmentioning

confidence: 99%

Current status of large-area MOVPE growth of HgCdTe device heterostructures for infrared focal plane arrays

Maxey¹,

Fitzmaurice²,

Lau³

et al. 2006

Journal of Elec Materi

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This paper reviews the current status of the growth of fully doped HgCdTe (MCT) devices by metalorganic vapor phase epitaxy (MOVPE). The current reactor system has been developed to produce 3-inch diameter epitaxial layers compatible with slice-scale processing. The new reactor system has achieved routine epitaxial growth of MCT with good morphology onto both gallium arsenide (GaAs) and GaAs on silicon (Si) wafers that were oriented (2-8°) off (100) orientation. The density of surface defects (so-called ''hillocks''), typical of MOVPE growth on such orientation substrates, has been reduced to ,5 cm ÿ 2 at a sufficient yield to make the production of low cluster defect 2D arrays possible. Alternative growth experiments onto cadmium telluride (CdTe) on Si substrates with (211)B orientation have also been performed to investigate their usefulness for infrared focal plane array (IRFPA) applications. Si substrates give better thermal expansion match to the read out Si circuits (ROIC). The horizontal reactor cell design has a graphite susceptor with a rotating platen capable of using substrates up to 4-inch diameter. Work, however, has concentrated on 3-inch diameter GaAs and GaAs on Si wafers substrates in the reactor, and these reproducibly demonstrated good compositional and thickness uniformity. Cut-off wavelength and thickness uniformity maps showed that there was sufficient uniformity to produce twelve sites of large format 2D arrays (640 3 512 diodes on 24-mm pitch) per slice. Minority carrier lifetimes in heterostructures is an important parameter and some factors affecting this are discussed, with special emphasis on As-doped material grown under various growth conditions in an attempt to reduce Shockley-Read (S-R) trap densities. New data are presented on trap densities and theoretical fitting of lifetimes in MOVPE material. Fully doped heterostructures have been grown to investigate the device performance in the 3-5 mm medium-wave IR (MWIR) band and 8-12 mm long-wave IR (LWIR). These layers have been fabricated into mesa arrays and then indium-bumped onto Si multiplexers. A summary of the 80-K device results shows that stateof-the-art device performance has been demonstrated in MOVPE-grown device structures.

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Metal-organic vapor-phase epitaxial growth of HgCdTe device heterostructures on three-inch-diameter substrates

Cited by 39 publications

References 12 publications

Advances in SELEX ES infrared detectors for space and astronomy

Advances in SELEX ES infrared detectors for space and astronomy

A long-range camera based on an HD MCT array of 12μm pixels

Current status of large-area MOVPE growth of HgCdTe device heterostructures for infrared focal plane arrays

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