Metal oxide heterojunction (NiO/ZnO) prepared by low temperature solution growth for UV-photodetector and semi-transparent solar cell

Klochko, N. P.; Kopach, V. R.; Tyukhov, I.I.; Жадан, Д.О.; Klepikova, K.S.; Khrypunov, G. S.; Petrushenko, S. I.; Lyubov, V.M.; Kirichenko, M. V.; Дукаров, С.В.; Khrypunova, A.L.

doi:10.1016/j.solener.2018.01.054

Cited by 70 publications

(31 citation statements)

References 38 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The best rectication was obtained at an annealing temperature of 250 C, and the lowest was observed at 300 C. The rectication ratio of the sample annealed at 250 C (in the thousands) is one or two orders of magnitude higher than those previously reported for solution-processed NiO-ZnO systems. [57][58][59] The device annealed at 300 C showed an increased leakage current and the lowest extent of rectication. This can be attributed to shorting of the circuit due to crack formation at higher annealing conditions.…”

Section: Characterisation Of the Dropcast And Printed Patternsmentioning

confidence: 99%

Metal oxide heterojunctions using a printable nickel oxide ink

et al. 2020

View full text Add to dashboard Cite

show abstract

Section: Characterisation Of the Dropcast And Printed Patternsmentioning

confidence: 99%

Metal oxide heterojunctions using a printable nickel oxide ink

et al. 2020

View full text Add to dashboard Cite

show abstract

“…More recently, NiO has also found many applications in optoelectronic devices. For example, p-type NiO has been broadly applied as the hole transport layer in solar cells [9][10][11][12] , ultraviolet photodetectors [13][14][15] , transparent junction diodes 16 , thin-film transistors 17 and visible light transparent solar cells 18,19 . On the other hand, semi-insulating stoichiometric NiO and Ni-rich NiO have been explored as major component materials for resistive switching and capacitance modulation applications [20][21][22] .…”

Section: Introductionmentioning

confidence: 99%

Vacancy defects induced changes in the electronic and optical properties of NiO studied by spectroscopic ellipsometry and first-principles calculations

Egbo

Liu

Ekuma

et al. 2020

Journal of Applied Physics

View full text Add to dashboard Cite

Native defects in semiconductors play an important role in their optoelectronic properties. Nickel oxide (NiO) is one of the few wide-gap p-type oxide semiconductors and its conductivity is believed to be controlled primarily by Ni-vacancy acceptors. Herein, we present a systematic study comparing the optoelectronic properties of stoichiometric NiO, oxygen-rich NiO with Ni vacancies (NiO:VNi) and Ni-rich NiO with O vacancies (NiO:VO). The optical properties were obtained by spectroscopic ellipsometry while valence band spectra were probed by high-resolution X-ray photoelectron spectroscopy. The experimental results are directly compared to firstprinciples DFT + U calculations. Computational results confirm that gap states are present in both NiO systems with vacancies. Gap states in NiO:Vo are predominantly Ni 3d states while those in NiO:VNi are composed of both the Ni 3d and O 2p states. The absorption spectra for the NiO:VNi sample show significant defect-induced features below 3.0 eV compared to NiO and NiO:VO samples. The increase in sub-gap absorptions in the NiO:VNi can be attributed to gap states observed in the electronic density of states. The relation between native vacancy defects and electronic and optical properties of NiO are demonstrated, showing that at similar vacancy concentration, the optical constants of NiO:VNi deviate significantly from those of NiO:VO. Our experimental and computational results reveal that although VNi are an effective acceptors in NiO, they also degrade the visible transparency of the material. Hence, for transparent optoelectronic device applications, an optimization of native VNi defects with extrinsic doping is required to simultaneously enhance p-type conductivity and transparency.

show abstract

“…The interfacial charge transfer between Bi 2 O 3 , MnO 2 and graphite, and the nanomorphology enabled by the SILAR deposition have been highlighted as the key factor in obtaining good charge storage performances. Alternative composites, including NiO-ZnO, [192] ZnO-CdO, [193] and SnO 2 -RuO 2 [194] have been fabricated targeting potential uses in solar photovoltaics, sensors and supercapacitors, respectively. Ammonia complexes of Ni and Cd were adopted in the NiO-ZnO and ZnO-CdO depositions while ZnO was initially electrodeposited.…”

Section: Composite and Complex Oxidesmentioning

confidence: 99%

SILAR Deposition of Metal Oxide Nanostructured Films

Ratnayake

Ren

Colusso

et al. 2021

Small

View full text Add to dashboard Cite

Methods for the fabrication of thin films with well controlled structure and properties are of great importance for the development of functional devices for a large range of applications. SILAR, the acronym for Successive Ionic Layer Adsorption and Reaction, is an evolution and combination of two other deposition methods, the Atomic Layer Deposition and Chemical Bath Deposition. Due to a relative simplicity and low cost, this method has gained increasing interest in the scientific community. There are, however, several aspects related to the influence of the many parameters involved, which deserve further deepening. In this review article, the basis of the method, its application to the fabrication of thin films, the importance of experimental parameters, and some recent advances in the application of oxide films are reviewed. At first the fundamental theoretical bases and experimental concepts of SILAR are discussed. Then, the fabrication of chalcogenides and metal oxides is reviewed, with special emphasis to metal oxides, trying to extract general information on the effect of experimental parameters on structural, morphological and functional properties. Finally, recent advances in the application of oxide films prepared by SILAR are described, focusing on supercapacitors, transparent electrodes, solar cells, and photoelectrochemical devices.

show abstract

Metal oxide heterojunction (NiO/ZnO) prepared by low temperature solution growth for UV-photodetector and semi-transparent solar cell

Cited by 70 publications

References 38 publications

Metal oxide heterojunctions using a printable nickel oxide ink

Metal oxide heterojunctions using a printable nickel oxide ink

Vacancy defects induced changes in the electronic and optical properties of NiO studied by spectroscopic ellipsometry and first-principles calculations

SILAR Deposition of Metal Oxide Nanostructured Films

Contact Info

Product

Resources

About