Metal-Oxide Stacked Electron Transport Layer for Highly Efficient Inverted Quantum-Dot Light Emitting Diodes

Kim, Hyo‐Min; Geng, Di; Kim, Jeonggi; Hwang, Eunsa; Jang, Jin

doi:10.1021/acsami.6b10314

Cited by 71 publications

(53 citation statements)

References 44 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The structure of control device is an ITO/PEDOT:PSS (30 nm)/PVK (15 nm)/green QDs/Li doped ZnO (LZO) (70 nm)/Al (100 nm). The CdSe/CdS/ZnS green QDs are used for the EML . The PVK and LZO are chosen as the HTL and electron transport layer (ETL), respectively.…”

Section: Resultsmentioning

confidence: 99%

High Hall Mobility P‐type Cu₂SnS₃‐Ga₂O₃ with a High Work Function

Kim

Cho

et al. 2018

Adv Funct Materials

Self Cite

View full text Add to dashboard Cite

A new transparent p-type oxide semiconductor (POS) is reported, Cu 2 SnS 3 -Ga 2 O 3 , having high Hall mobility of 36.22 cm 2 V −1 s −1 , and high work function of 5.17 eV. The existence of Cu 2 SnS 3 and Ga 2 O 3 phases in the film is confirmed by X-ray photoelectron spectroscopy results and the Cu 2 SnS 3 shows polycrystalline structure according to Raman spectrum and X-ray diffraction analysis. The transparent Cu 2 SnS 3 -Ga 2 O 3 exhibits the carrier concentration of 5.86 × 10 16 cm −3 , and electrical resistivity of 1.94 Ω·cm. The transparent POS is applied to green quantum light-emitting diodes (QLEDs) as a hole injection layer (HIL) because of its high work function. The QLED exhibits the maximum current efficiency of 51.72 cd A −1 , power efficiency of 31.97 lm W −1 , and external quantum efficiency (EQE) of 14.93%, which are much higher than the QLED using polyethylene dioxythophene:poly(styrenesulfonate) HIL exhibiting current efficiency of 42.66 cd A −1 , power efficiency of 20.33 lm W −1 , and EQE of 12.36%. The Cu 2 SnS 3 -Ga 2 O 3 developed in this work can be widely used as a transparent and conductive p-type oxide for thin-film devices.

show abstract

Section: Resultsmentioning

confidence: 99%

High Hall Mobility P‐type Cu₂SnS₃‐Ga₂O₃ with a High Work Function

Kim

Cho

et al. 2018

Adv Funct Materials

Self Cite

View full text Add to dashboard Cite

show abstract

“…They found that decreasing the particle sizes led to ZnO ETLs with higher effective electron mobility and devices with lower turn‐on voltage and higher efficiency. Jang and co‐workers employed a bi‐layered ETLs consisting of Li‐doped ZnO (LZO) and Al‐doped ZnO . The authors suggested that the LZO layer improved electron injection and decreased exciton loss at the interfaces of QD/oxide.…”

Section: Prototype Qledsmentioning

confidence: 99%

Quantum‐Dot Light‐Emitting Diodes for Large‐Area Displays: Towards the Dawn of Commercialization

et al. 2017

View full text Add to dashboard Cite

Quantum dots are a unique class of emitters with size-tunable emission wavelengths, saturated emission colors, near-unity luminance efficiency, inherent photo- and thermal- stability and excellent solution processability. Quantum dots have been used as down-converters for back-lighting in liquid-crystal displays to improve color gamut, leading to the booming of quantum-dot televisions in consumer market. In the past few years, efficiency and lifetime of electroluminescence devices based on quantum dots achieved tremendous progress. These encouraging facts foreshadow the commercialization of quantum-dot light-emitting diodes (QLEDs), which promises an unprecedented generation of cost-effective, large-area, energy-saving, wide-color-gamut, ultra-thin and flexible displays. Here we provide a Progress Report, covering interdisciplinary aspects including material chemistry of quantum dots and charge-transporting layers, optimization and mechanism studies of prototype devices and processing techniques to produce large-area and high-resolution red-green-blue pixel arrays. We also identify a few key challenges facing the development of active-matrix QLED displays.

show abstract

“…N-type oxide is an ideal electron transport material and p-type oxide is used as hole injection material for QLEDs. [8][9][10][11] The oxide n-p CGJ is expected to efficiently generate and inject charges to the bottom and top QLEDs under forward bias. 1) The voltage at luminance of 1 cd m -2 .…”

Section: Resultsmentioning

confidence: 99%

47‐3: AMQLED Display with Highly Efficient Oxide N‐P Charge Generation Junction

Kim¹,

Kim²,

Lee³

et al. 2019

Symp Digest of Tech Papers

Self Cite

View full text Add to dashboard Cite

We have developed high efficiency tandem quantum-dot lightemitting diode (QLED) by using oxide n-p charge generation junction (CGJ). The tandem QLED with oxide n-p CGJ exhibits the current efficiency as high as over 120 cd A -1 . The oxide n-p CGJ shows good Ohmic behavior under forward and reverse bias. It is obvious that the reverse current density is nearly equal to the forward current density, which suggest the efficient charge generation in the oxide n-p CGJ. In this work, we demonstrated a 4-inch AMQLED display using high efficiency tandem QLED with oxide n-p CGJ. Author KeywordsHigh efficiency, quantum-dot light-emitting diodes, oxide n-p CGJ, tandem structure, 4-inch AMQLED.

show abstract

Metal-Oxide Stacked Electron Transport Layer for Highly Efficient Inverted Quantum-Dot Light Emitting Diodes

Cited by 71 publications

References 44 publications

High Hall Mobility P‐type Cu₂SnS₃‐Ga₂O₃ with a High Work Function

High Hall Mobility P‐type Cu₂SnS₃‐Ga₂O₃ with a High Work Function

Quantum‐Dot Light‐Emitting Diodes for Large‐Area Displays: Towards the Dawn of Commercialization

47‐3: AMQLED Display with Highly Efficient Oxide N‐P Charge Generation Junction

Contact Info

Product

Resources

About

Metal-Oxide Stacked Electron Transport Layer for Highly Efficient Inverted Quantum-Dot Light Emitting Diodes

Cited by 71 publications

References 44 publications

High Hall Mobility P‐type Cu2SnS3‐Ga2O3 with a High Work Function

High Hall Mobility P‐type Cu2SnS3‐Ga2O3 with a High Work Function

Quantum‐Dot Light‐Emitting Diodes for Large‐Area Displays: Towards the Dawn of Commercialization

47‐3: AMQLED Display with Highly Efficient Oxide N‐P Charge Generation Junction

Contact Info

Product

Resources

About

High Hall Mobility P‐type Cu₂SnS₃‐Ga₂O₃ with a High Work Function

High Hall Mobility P‐type Cu₂SnS₃‐Ga₂O₃ with a High Work Function