Metal Silicides: Active elements of ULSI contacts

Impact of cobalt silicidation on the low-frequency noise behavior of shallow p-n junctions

“…One of the imposed boundary conditions is that silicidation of the highly doped n or p region consumes part of it, so that the metal-silicon interface comes close to the metallurgical junction. This may affect considerably the static current-voltage (I-V) characteristics of the junctions [1]- [3]. It has been demonstrated that both the reverse and forward current increase with increased silicide thickness [3]- [5] or in other words, for smaller remaining n (or p ) thickness .…”

Effect of substrate temperature on CoSi2 formation by a metal vapor vacuum arc ion source

“…Owing to its low resistance, good thermal stability, line-width independence, easy formation on narrow Si lines and small lattice mismatch with Si substrates [1][2][3], cobalt silicide has been widely used in MOS fabrication as a contact material to source/drain areas and as a conductor on poly-Si gates.…”

Effect of pre-Co-deposition Ni ion implantation on the stress level of CoSi2 films on Si(100)

“…In the ultra-large-scale integrated circuit technology, silicides play an important role as contact materials [1][2][3]. Due to its line-width independent, low resistivity, low Schottky barrier, good thermal stability, easy formation on narrow Si lines and small lattice mismatch with Si substrates (only À1.2%), Co disilicide is considered to be an attractive candidate material of use in future complementary metal-oxide semiconductor device generations to replace TiSi 2 which is used the most widely currently [1][2][3].…”