Metal-to-metal antifuses with very thin silicon dioxide films

Electric-Field-Induced Metal Filament Formation in Cobalt-Based CBRAM Observed by TEM

“…The magnitude of the breakdown voltage during the backward forming process is 23% higher than the forward one, as shown in Figure b. Furthermore, Figure c indicates that the calculated dielectric strength measured during the backward forming process is 6–9 MV/cm, which is consistent with the previously reported dielectric strength of the PECVD-deposited SiO 2 film. , These results indicate that the RS operation in Co CBRAM is far from intrinsic dielectric breakdown. Nonetheless, a second experiment is required because this asymmetric RS operation might be due to the nonuniform oxygen vacancy distribution inside the dielectric layer as a result of the oxygen scavenging effect of the metal electrode. ,, Assuming that the Co/SiO x /TiN cell is a VCM instead of ECM, replacing the top electrode with a metal whose oxidizing power is comparable to that of Co will cause a minor change in the RS characteristics of the device.…”

“…Furthermore, Figure 6c indicates that the calculated dielectric strength measured during the backward forming process is 6−9 MV/cm, which is consistent with the previously reported dielectric strength of the PECVD-deposited SiO 2 film. 61,62 These results indicate that the RS operation in Co CBRAM is far from intrinsic dielectric breakdown. Nonetheless, a second experiment is required because this asymmetric RS operation might be due to the nonuniform oxygen vacancy distribution inside the dielectric layer as a result of the oxygen scavenging effect of the metal electrode.…”

A High Reliable High-κ Antifuse Programmed by Intrinsic Overshoot Current

“…A reliable antifuse requires a very high resistance or low leakage current in the off-state before programming, and a permanent low resistance in the on-state after programming. Metal-insulator-metal antifuses made of dielectrics such as oxide, silicon nitride, or amorphous silicon are very common and have been extensively studied, [5][6][7][8][9] whereas the antifuses with dielectrics of high-κ material are less discussed and reported in the literature. In this work, we used Atomic Layer Deposition(ALD) Al 2 O 3 as dielectric which proved to show low leakage current due to its high quality and large bandgap, low on-state resistance was also achieved by taking advantage of current overshoot in our specific structure.…”

Role of Ti Electrode on the Electrical Characterization of Filament within Al2O3Based Antifuse

“…[1][2][3][4] A reliable antifuse requires permanent low on-state resistance after programming. Metal-insulator-metal antifuses using dielectrics such as oxide, silicon nitride, or amorphous silicon are very common and have been extensively studied, [5][6][7][8][9] whereas the antifuses using high-κ material as dielectric are less reported in literature. In this work, we use Atomic Layer Deposition (ALD) Al 2 O 3 as antifuse dielectric, and low on-state resistance is achieved by taking advantage of current overshoot in our original structure.…”