Metallization of ion beam synthesized Si/3C–SiC/Si layer systems by high-dose implantation of transition metal ions

Lindner, J.K.N.; Wenzel, Stephanie; Stritzker, B.

doi:10.1016/s0168-583x(00)00593-0

Cited by 4 publications

(2 citation statements)

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“…In this case the aim was to completely convert the roughly 400 nm thick Si top layer into a highly conductive transition metal silicide, contacting the buried SiC layer. Ti implantations [9,10] were done with a conventional implanter at 180 keV and a target temperature of 350 or 500°C, while a metal vapor vacuum arc (MEVVA) ion source operated at 70 kV was used to implant Ni ions at 200°C. In these experiments, the metal ion dose was varied in order to find conditions at which -taking sputtering into account -the silicon-tometal atom ratio in the surface layer equals 2:1 to allow for homogeneous disilicide formation.…”

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Ion Beam Synthesis Of Metal - Silicon Carbide - Si Multilayer Structures

Lindner¹,

Tsang²,

Stritzker³

et al. 2003

AIP Conference Proceedings

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Articles you may be interested inFocused helium and neon ion beam induced etching for advanced extreme ultraviolet lithography mask repair Effects of low-fluence swift iodine ion bombardment on the crystallization of ion-beam-synthesized silicon carbide Abstract.. High doses of Ti, Ni, Mo, or W ions were implanted at elevated temperatures either conventionally or using a MEVVA ion source into ion beam synthesized Si/SiC/Si or SiC/Si layer structures in order to create metallic layers contacting the SiC. The depth distribution of metal atoms and the formation of silicide and carbide phases as well as the formation of cavities at the lower SiC/Si interface are studied by Rutherford backscattering spectroscopy (RBS) and cross-sectional transmission electron microscopy (XTEM). A brief survey of the effects ocurring in the ion beam metallization of SiC films is given and the benefit of using ion beams for metallization of thin films is elucidated.

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Section: Methodsmentioning

confidence: 99%

“…Mo ions were implanted at 550°C with a conventional implanter at 180 keV into the same layer structures, but after stripping off the Si top layer by a selective wet-chemical etch [10]. This was done due to [11] the small range of Mo ions, in order to save implantation time.…”

Section: Methodsmentioning

confidence: 99%