Metalorganic chemical vapor deposition of ferroelectric SrBi2Ta2O9 thin films

Li, Tingkai; Zhu, Yongfei; Desu, Seshu B.; Peng, Chien-Hsiung; Nagata, M.

doi:10.1063/1.116486

Cited by 209 publications

(69 citation statements)

References 9 publications

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“…The remanent polarization (2 P r ) of the capacitor is 27Ϯ1 C/cm 2 at an applied voltage of 10 V. This value is significantly higher than that of 8.3 C/cm 2 for SrBi 2 Ta 2 O 9 , another fatigue-free FE material. 15 The present 2 P r value is even higher than the value of 24 C/cm 2 for the PLD-grown BLT films reported by Park et al 9 The coercive field (E c ) of the BLT capacitor is in the range of 50-75 kV/cm, which is comparable to the previously reported value of 50 kV/cm for the PLD-grown capacitor. 9 More importantly, these values, i.e., P r and E c , of the capacitor ͑with an electrode area of 10 Ϫ4 cm 2 ͒ are constant throughout the whole area of the film, which presumably results from the homogeneity of the grain orientation in the present MOSD-derived film.…”

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confidence: 58%

Fatigue-free behavior of highly oriented Bi3.25La0.75Ti3O12 thin films grown on Pt/Ti/SiO2/Si(100) by metalorganic solution decomposition

Chon

Jang

2001

Applied Physics Letters

118

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Fatigue-free and highly c-axis oriented Bi 3.25 La 0.75 Ti 3 O 12 ͑BLT͒ thin films were grown on Pt/Ti/SiO 2 /Si͑100͒ substrates using metalorganic solution decomposition. Films annealed above 500°C were characterized by strong c-axis preferential growth with an in-plane alignment of grains. The BLT film capacitors with a Pt top electrode showed excellent ferroelectric properties. The remanent polarization (2 P r ) and the coercive field (E c ) were in the range of 26-28 C/cm 2 and 50-75 kV/cm, respectively. More importantly, the BLT capacitors did not show any significant fatigue up to 3.5ϫ10 10 read/write switching cycles at a frequency of 1 MHz. © 2001 American Institute of Physics. ͓DOI: 10.1063/1.1333686͔There has been extensive research on ferroelectric ͑FE͒ thin films for nonvolatile memory device applications. [1][2][3][4][5] Perovskite ferroelectrics, especially lead zirconate titanate ͓PbZr x Ti 1Ϫx O 3 ͑PZT͔͒, represent an important class of FE materials. PZT capacitors with simple metal ͑such as Pt͒ electrodes in general show excellent piezoelectric/ ferroelectric properties and are compatible with Si-based integrated circuit ͑IC͒ technology. However, their fatigue resistance is poor and degrades seriously after being subjected to 10 7 -10 8 switching cycles. 6,7 Although the fatigue problem in PZT films can be solved by using metaloxide electrodes, these electrodes are difficult to prepare and increase leakage currents. Some layered perovskites such as strontium bismuth tantalate (SrBi 2 Ta 2 O 9 ) and lanthanum substituted bismuth titanate ͓Bi 3.25 La 0.75 Ti 3 O 12 ͑BLT͔͒ show superior fatigue resistance compared to Pt/PZT/Pt capacitors. 8,9 As a fatigue-free material, BLT is of particular interest because it can be crystallized at low processing temperatures below 650°C, which is compatible with Si-based IC technology.Recently, fatigue-free BLT films have been grown on Pt/Ti/SiO 2 /Si͑100͒ substrates using pulsed laser deposition ͑PLD͒. 9 However, the BLT films prepared by the PLD method were characterized by a mixed orientation of grains. As pointed out by Kingon, 10 mixed orientation increases bitto-bit variability capacitors for high-density ferroelectric memory devices. In addition, the PLD-grown films generally exhibit wide variation in the film thickness. These are problematic for device applications since a large-scale process in the IC industry requires a uniform and homogeneous film over a large area of silicon substrate for the reproducibility of devices. The metalorganic solution decomposition ͑MOSD͒ employed in this study, however, fulfills these requirements as it offers excellent uniformity over a large area, easy composition control, short fabrication time as well as lowtemperature process at a comparatively low cost. In this letter, we report on the ferroelectric property and fatigue-free behavior of BLT films prepared by the MOSD method. Unlike BLT films fabricated by the PLD method, the present BLT films were characterized by a high c-axis oriented growth with a homogeneous in-p...

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confidence: 58%

Fatigue-free behavior of highly oriented Bi3.25La0.75Ti3O12 thin films grown on Pt/Ti/SiO2/Si(100) by metalorganic solution decomposition

Chon

Jang

2001

Applied Physics Letters

118

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“…Recent studies have reported that these bismuth-layered materials have presented good ferroelectric properties. 1,2 Several preparation methods of Bi-layer thin films such as laser ablation, 1,3,4 sputtering, 5 metalorganic chemical vapor deposition (MOCVD), [6][7][8] sol-gel, 9,10 and metalorganic decomposition, [11][12][13] have been employed. Normally, physical methods have the disadvantage of requiring sophisticated and expensive equipment.…”

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confidence: 99%

The influence of crystallization route on the SrBi₂Nb₂O₉ thin films

et al. 1999

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Polycrystalline SrBi 2 Nb 2 O 9 -layered ferroelectric thin films were synthesized on Pt͞Ti͞SiO 2 ͞Si substrate using the polymeric precursors solution. The dip-coated films were specular and crack-free and crystallized during firing at 700 ± C. Single-, double-, and triple-layered films were obtained by several dips in the deposition solution, and the influence of crystallization between each dip was studied. Microstructure and morphological evaluation were followed by grazing incident x-ray diffraction (GIXRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). Multilayered films obtained using the intermediate-crystallized layer route present a dense microstructure with spherical grains, with a preferential orientation in the ͗215͘ direction; films obtained using the intermediate-amorphous layer route are polycrystalline and present elongated grains around 250 nm in size.

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“…͓S0003-6951͑97͒03034-9͔ SrBi 2 Ta 2 O 9 is one of the leading candidate material for ferroelectric random access memory ͑FRAM͒ devices. [1][2][3] However, the realization of a commercially viable nonvolatile FRAM technology based on SrBi 2 Ta 2 O 9 has been hampered by problems related to high processing temperature ͑Ͼ750°C͒, low P r , and low Curie temperature which make the direct integration into high density CMOS devices extremely difficult. 4 The high crystallization temperature poses a problem for the selection of a suitable barrier layer, and low P r and low T c make these films unsuitable for high density memories and high temperature operation.…”

mentioning

confidence: 99%

Thin films of layered-structure (1−x)SrBi2Ta2O9−xBi3Ti(Ta1−yNby)O9 solid solution for ferroelectric random access memory devices

Desu¹,

Joshi²,

Zhang³

et al. 1997

Applied Physics Letters

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Metalorganic chemical vapor deposition of ferroelectric SrBi2Ta2O9 thin films

Abstract: Structural and ferroelectric properties of the caxis oriented SrBi2Ta2O9 thin films deposited by the radio frequency magnetron sputtering

Cited by 209 publications

References 9 publications

Fatigue-free behavior of highly oriented Bi3.25La0.75Ti3O12 thin films grown on Pt/Ti/SiO2/Si(100) by metalorganic solution decomposition

Fatigue-free behavior of highly oriented Bi3.25La0.75Ti3O12 thin films grown on Pt/Ti/SiO2/Si(100) by metalorganic solution decomposition

The influence of crystallization route on the SrBi₂Nb₂O₉ thin films

Thin films of layered-structure (1−x)SrBi2Ta2O9−xBi3Ti(Ta1−yNby)O9 solid solution for ferroelectric random access memory devices

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Metalorganic chemical vapor deposition of ferroelectric SrBi2Ta2O9 thin films

Abstract: Structural and ferroelectric properties of the caxis oriented SrBi2Ta2O9 thin films deposited by the radio frequency magnetron sputtering

Cited by 209 publications

References 9 publications

Fatigue-free behavior of highly oriented Bi3.25La0.75Ti3O12 thin films grown on Pt/Ti/SiO2/Si(100) by metalorganic solution decomposition

Fatigue-free behavior of highly oriented Bi3.25La0.75Ti3O12 thin films grown on Pt/Ti/SiO2/Si(100) by metalorganic solution decomposition

The influence of crystallization route on the SrBi2Nb2O9 thin films

Thin films of layered-structure (1−x)SrBi2Ta2O9−xBi3Ti(Ta1−yNby)O9 solid solution for ferroelectric random access memory devices

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The influence of crystallization route on the SrBi₂Nb₂O₉ thin films