Metalorganic Molecular Beam Epitaxy of InGaN Layers and Their Optical Properties

Kim, Min Ho; Cho, Jun Kyu; Lee, In Hwan; Park, Seong Ju

doi:10.1002/(sici)1521-396x(199911)176:1<269::aid-pssa269>3.0.co;2-2

Cited by 29 publications

(11 citation statements)

References 11 publications

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“…The band gap of indium nitride sits near 0.7 eV. We have to distinguish results obtained in the gallium-rich composition ranges assuming the band gap of InN to sit near 2 eV [9][10][11][12][13][14][15][16][17][18] from results obtained in the high indium composition ranges which assume in general a low value of the band gap of InN [19][20][21][22]. The first series of data in general lead to a large value of the bowing parameter provided that the investigation is made using a large enough alloy compositions range.…”

Section: Article In Pressmentioning

confidence: 84%

Optical, structural investigations and band-gap bowing parameter of GaInN alloys

Moret

Gil

Ruffenach

et al. 2009

Journal of Crystal Growth

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Section: Article In Pressmentioning

confidence: 84%

Optical, structural investigations and band-gap bowing parameter of GaInN alloys

Moret

Gil

Ruffenach

et al. 2009

Journal of Crystal Growth

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“…However, only a few measurements, e.g. those of Davydov et al 92 and Kim et al, 93 follow the E g (x) − ∆E g (x) line. Deviations found in other measurements may be a consequence of the actual alloy samples with local appearance of ordered structures and/or composition fluctuations.…”

Section: Fundamental Gap and Bowingmentioning

confidence: 99%

Distribution of cations in wurtzitic InxGa1−xN and Inx
Carvalho
¹
,
Schleife
²
,
Furthmüller
³

et al. 2012
Phys. Rev. B
25
1
18
0
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The ternary, isostructural, wurtzite-derived group-III mononitride alloys In x Ga 1−x N and In x Al 1−x N are reexamined within a cluster expansion approach. Using density functional theory together with the AM05 exchangecorrelation functional, the total energies and the optimized atomic geometries of all 22 clusters classes of the cluster expansion for each material system are calculated. The computationally demanding calculation of the corresponding quasiparticle electronic structures is achieved for all cluster classes by means of a recently developed scheme to approximately solve the quasiparticle equation based on the HSE06 hybrid functional and the G 0 W 0 approach. Using two different alloy statistics, the configurational averages for the lattice parameters, the mixing enthalpies, and the bulk moduli are calculated. The composition-dependent electronic structures of the alloys are discussed based on configurationally averaged electronic states, band gaps, and densities of states. Ordered cluster arrangements are found to be energetically rather unfavorable, however, they possess the smallest energy gaps and, hence, contribute to light emission. The influence of the alloy statistics on the composition dependencies and the corresponding bowing parameters of the band gaps is found to be significant and should, hence, lead to different signatures in the optical-absorption or -emission spectra.

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“…5. a) PL spectra and absorption edges in In-rich In x Ga 1--x N layers; b) E G (n) estimated for the Inrich alloys studied in this work, and the positions of PL band maxima in Ga-rich alloys taken from Refs [12][13][14]. 5. a) PL spectra and absorption edges in In-rich In x Ga 1--x N layers; b) E G (n) estimated for the Inrich alloys studied in this work, and the positions of PL band maxima in Ga-rich alloys taken from Refs [12][13][14].…”

mentioning

confidence: 99%

Band Gap of Hexagonal InN and InGaN Alloys

Davydov

Klochikhin

Емцев

et al. 2002

phys. stat. sol. (b)

286

105

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A survey of most recent studies of optical absorption, photoluminescence, photoluminescence excitation, and photomodulated reflectance spectra of single-crystalline hexagonal InN layers is presented. The samples studied were undoped n-type InN with electron concentrations between 6 Â 10 18 and 4 Â 10 19 cm --3 . It has been found that hexagonal InN is a narrow-gap semiconductor with a band gap of about 0.7 eV, which is much lower than the band gap cited in the literature. We also describe optical investigations of In-rich In x Ga 1--x N alloy layers (0.36 < x < 1) which have shown that the bowing parameter of b $ 2.5 eV allows one to reconcile our results and the literature data for the band gap of In x Ga 1--x N alloys over the entire composition region. Special attention is paid to the effects of post-growth treatment of InN crystals. It is shown that annealing in vacuum leads to a decrease in electron concentration and considerable homogenization of the optical characteristics of InN samples. At the same time, annealing in an oxygen atmosphere leads to formation of optically transparent alloys of InN-In 2 O 3 type, the band gap of which reaches approximately 2 eV at an oxygen concentration of about 20%. It is evident from photoluminescence spectra that the samples saturated partially by oxygen still contain fragments of InN of mesoscopic size.

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Metalorganic Molecular Beam Epitaxy of InGaN Layers and Their Optical Properties

Cited by 29 publications

References 11 publications

Optical, structural investigations and band-gap bowing parameter of GaInN alloys

Optical, structural investigations and band-gap bowing parameter of GaInN alloys

Distribution of cations in wurtzitic InxGa1−xN and Inx
Carvalho
¹
,
Schleife
²
,
Furthmüller
³

et al. 2012
Phys. Rev. B
25
1
18
0
View full text Add to dashboard Cite

Band Gap of Hexagonal InN and InGaN Alloys

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Metalorganic Molecular Beam Epitaxy of InGaN Layers and Their Optical Properties

Cited by 29 publications

References 11 publications

Optical, structural investigations and band-gap bowing parameter of GaInN alloys

Optical, structural investigations and band-gap bowing parameter of GaInN alloys

Distribution of cations in wurtzitic InxGa1−xN and InxCarvalho1, Schleife2, Furthmüller3 et al. 2012Phys. Rev. B251180View full textAdd to dashboardCite

Band Gap of Hexagonal InN and InGaN Alloys

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Distribution of cations in wurtzitic InxGa1−xN and Inx
Carvalho
¹
,
Schleife
²
,
Furthmüller
³

et al. 2012
Phys. Rev. B
25
1
18
0
View full text Add to dashboard Cite