Metalorganic vapor phase epitaxy InSbp+nn+ photodiodes with low dark current

Abstract

Photodiodes of InSb were fabricated on epilayers grown by metalorganic vapor phase epitaxy (MOVPE). Dark reverse current density as low as 1×10−7A∕cm2 at −0.1V bias, and zero-bias-resistance area products as high as 1×106Ωcm2 were measured. These values are comparable to the best values reported for InSb diodes grown by molecular-beam epitaxy. The very good uniformity of the diode dark current implies that MOVPE is a promising growth technique for the fabrication of state-of-the-art focal plane InSb detector arrays.

Wafer-fused mid-infrared optical up-converter based on MOCVD grown InSb

“…More details on the InSb wafer growth can be found in Ref. [2]. The GaAs/AlGaAs LED structure was grown by molecular beam epitaxy (MBE) on an n-type GaAs substrate.…”

“…InSb has been intensively studied in decades and widely used for fabricating high-performance devices because of its good chemical stability, low effective mass, high electron and hole mobility, and narrow band gap [1][2][3][4][5][6][7][8]. Recent advances include doping superlattices based on InSb for mid-infrared (MIR) detector application [1], InSb/InAsSb/InSb heterojunction photodiodes operating at near room-temperature in 8-13 µm spectral range [3], InSb p-channel metaloxide-semiconductor field-effect transistor prepared by photoenhanced chemical vapor deposition [4], and enhanced terahertz (THz) radiation from InSb upon the excitation of the 100 fs optical pulses at a center wavelength of 1560 nm emitted from a compact fiber laser [5].…”