Metamorphic H-Band Low-Noise Amplifier MMICs

Tessmann, A.; Leuther, A.; Massler, H.; Bronner, W.; Schlechtweg, M.; Weimann, G.

doi:10.1109/mwsym.2007.380443

Cited by 26 publications

(11 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As low noise amplifier (LNA) MMICs are placed at the receiver's front-end, high gain, wide bandwidth, and low power consumption are required. So far, D-band [1][2][3], G-band [4][5], and H-band [6][7] amplifiers showing respectable performance have been reported.…”

Section: Introductionmentioning

confidence: 99%

Submillimeter-wave InP HEMT amplifiers with current-reuse topology

Sato

Shiba

Matsumura

et al. 2013

2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

View full text Add to dashboard Cite

This paper describes the use of InP HEMT technology to develop submillimeter-wave amplifier circuits. The amplifiers are designed using common-gate amplifiers with series inductors, which achieve both high gain and wide bandwidth. Two submillimeter-wave amplifiers are designed. One is a D-band amplifier that achieves a small-signal gain of 15 dB at 160 GHz and a −3 dB bandwidth of 89 GHz between 105 and 194 GHz. The other is a G-band amplifier that achieves a small signal gain of 10 dB at 200 GHz and a −3 dB bandwidth of 80 GHz between 130 and more than 220 GHz. These results demonstrate the design methodology is one of the best candidates for developing submillimeter-wave amplifiers.Index Terms -common-gate amplifier, current reuse topology, D-band, G-band, HEMT, low noise amplifier, spiral inductor, thin film microstrip line.

show abstract

Section: Introductionmentioning

confidence: 99%

Submillimeter-wave InP HEMT amplifiers with current-reuse topology

Sato

Shiba

Matsumura

et al. 2013

2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

View full text Add to dashboard Cite

show abstract

“…In passive systems, heterodyne receivers require high local oscillator power levels to drive their mixers. While MMIC technology has been shown to be capable of providing low-noise amplifiers covering the entire millimeter-wave range [1], [2], relatively few works have been reported on MMIC-based power amplification beyond 100 GHz. In [3] transistor (HEMT) technology.…”

Section: Introductionmentioning

confidence: 99%

A 200 GHz Monolithic Integrated Power Amplifier in Metamorphic HEMT Technology

Kallfass

Pahl

Maßler

et al. 2009

IEEE Microw. Wireless Compon. Lett.

Self Cite

View full text Add to dashboard Cite

Abstract-A millimeter-wave monolithic integrated circuit power amplifier operating in the frequency range between 186 and 212 GHz is presented. The amplifier, dedicated to high-resolution imaging radar and communication systems, is realized in a 100 nm gate length metamorphic high electron mobility transistor technology. The three-stage design with four parallel transistors in the output stage achieves a linear gain of more than 12 dB and provides a saturated output power of more than 9 dBm and 7 dBm at 192 and 200 GHz, respectively.Index Terms-G-band, mHEMT, millimeter-wave field effect transistor (FET) integrated circuits (ICs), millimeter-wave power amplification, monolithic microwave integrated circuits (MMICs).

show abstract

“…Rapid advancement of solid state transistor technology has pushed extremely high maximum oscillation frequencies (F max ) in various technologies including NGC's recently published 35 nm InP HEMT devices with F max > 1 THz [1][2][3]. These achievements have opened the door to a new class of active circuits designed around the new device technology which reach 340 GHz for the first time.…”

Section: Introductionmentioning

confidence: 99%