Metastable and bistable defects in silicon

Mukashev, B.N.; Абдуллин, Х.А.; Gorelkinskii, Yurii V.

doi:10.3367/ufnr.0170.200002b.0143

Cited by 21 publications

(15 citation statements)

References 69 publications

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“…It is known, that the irradiation by electron with energy 8 MeV forms in Si crystals structural point and complex defects (in particular, with impurity), so called "secondary radiation defects" (SRD) [1][2][3][4][5][6]. At low irradiation doses mainly point defect production may occur, while at high doses SRD formation becomes preferable, and moreover, clusters are formed too [5].…”

Section: Resultsmentioning

confidence: 99%

“…There are numerous investigations concerning the influence of irradiations on the properties of solid states (including silicon) which are carried out before and after irradiation [for example [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. The works on studying the properties of solid states directly under the irradiation process are very scarce [15][16][17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

“…The nature of radiation structural defects depends on type, energy, dose and intensity of radiation [1,2,4]. The charged particles interact with atoms in the material by means of long-distance Coulomnic forces, resulting in frequent, but weak collisions.…”

Section: Introductionmentioning

confidence: 99%

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In-Situ Study of Silicon Single Crystals Conductivity under Electron Irradiation

Yeritsyan¹,

Sahakyan²,

Nikoghosyan³

et al. 2012

JMP

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The influence of electron radiation on the properties of semiconducting silicon single crystals (Si)—both n- and p-types (currently one of the most widely applied material in the electronic technology) was studied under the electron irradiation process in-situ in air (in common conditions). Higher value of electro-conductivity (σ) during the irradiation process with respect to after irradiation was observed, which was explained by ionization and capture mechanisms resulting in the formation of non-equilibrium carriers (hole-electron pairs). The kinetics of radiation defects generation, their physical nature, temperature stability and relaxation are examined. Structural radiation defects formation: point and complexes, their influence on the silicon conductivity are considered

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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In-Situ Study of Silicon Single Crystals Conductivity under Electron Irradiation

Yeritsyan¹,

Sahakyan²,

Nikoghosyan³

et al. 2012

JMP

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“…The study of recombination processes in irradiated semiconductors as a nonequilibrium state, mainly in silicon crystals, is of significance because it determines the behavior of the electro-physical parameters for these materials: conductivity, concentration and mobility of charge carriers, and a characteristic property, which is the lifetime of the minority charge carriers. The main factors that prevent the achievement of an equilibrium state under conditions of irradiation are the energetic parameters of impurity redistributions and vacancy-interstitials, both as initially present, and those which are created during irradiation [1] [2] [3] [4] [5]. These radiation defects are often responsible for the degradation of devices that contain silicon crystals, and even in the absence of degradation, the performance of a device can be impeded by the presence of defects.…”

Section: Introductionmentioning

confidence: 99%

<i>In-Situ</i> Study of Non-Equilibrium Charge Carriers’ Behavior under Ultra-Short Pulsed Electrons Irradiation in Silicon Crystal

Yeritsyan¹,

Sahakyan²,

Grigoryan³

et al. 2019

JMP

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The recombination processes for charge carriers have been studied in n-type silicon crystals which were irradiated by pico-second duration pulse electrons with energy of 3.5 MeV (ultrafast irradiation), and maximum dose of 3.3 × 10 13 el/cm 2 . In-situ measurements were carried out under artificial conditions simulating natural environment (space, semiconductor detectors, etc.). The observed phenomena were investigated experimentally in-situ using a high-speed oscilloscope equipped with a special preamplifier. Following irradiation to particular doses, some peculiarities of the recovery time of the semiconductor equilibrium condition ("characteristic time"), were obtained. Thus, it was found that the value of the "characteristic time" differs by an order of magnitude from the lifetime of the non-equilibrium (minority) charge carrier measured in an ex-situ regime. However, their behavior, as a function of irradiation dose, is similar and decreases with dose increase. Investigations of the dependencies of electro-physical parameters on irradiation dose, using Hall effect measurements, showed that at particular doses the radiation defects thus created, have an insignificant influence on the concentration of the charge carriers, but change their scattering properties appreciably, which affects the time parameters for the recombination of the semiconductor charge carriers. This investigation uses a novel approach to solid-state radiation physics, where in situ measurements were conducted in addition to conventional pre-and post-irradiation.

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“…Examples are complexes of interstitial and substitutional carbon atoms (C i -C s ) [9][10][11], interstitial Fe and substitutional Al (Fe i Al s ) [12,13], a vacancy and two O atoms (V Si -O 2i ) [14,15], interstitial carbon and a substitutional donor (D) where the donor is a group-V element (C i -D s ) [16,17], Cu-S and Cu-Se pairs as well as the Si-O complex [18]. Examples are complexes of interstitial and substitutional carbon atoms (C i -C s ) [9][10][11], interstitial Fe and substitutional Al (Fe i Al s ) [12,13], a vacancy and two O atoms (V Si -O 2i ) [14,15], interstitial carbon and a substitutional donor (D) where the donor is a group-V element (C i -D s ) [16,17], Cu-S and Cu-Se pairs as well as the Si-O complex [18].…”

Section: Introductionmentioning

confidence: 99%

Electrical Properties of Silicon with Bistable Impurity Complexes

et al. 2009

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Many impurity complexes in silicon such as boron-oxygen and iron-aluminium complexes are found to be bistable. Such defect complexes can be in two different configurations separated by a potential barrier. Commonly bistable recombinative complexes in silicon are studied through carrier lifetime experiments and are analysed by use of Shockley-Read-Hall (SRH) recombination theory. SRH recombination theory is valid for stable defects with one configuration and one energy level in the band gap. However, the theory might fail when applied to the recombination centers formed by bistable defects. This work presents a theoretical study of electrical properties of silicon with bistable impurity complexes. The analysis has been performed for statistics of free electrons and holes, their recombination rate and lifetime. The results have been compared with those obtained from the SRH recombination theory.

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Metastable and bistable defects in silicon

Cited by 21 publications

References 69 publications

In-Situ Study of Silicon Single Crystals Conductivity under Electron Irradiation

In-Situ Study of Silicon Single Crystals Conductivity under Electron Irradiation

<i>In-Situ</i> Study of Non-Equilibrium Charge Carriers’ Behavior under Ultra-Short Pulsed Electrons Irradiation in Silicon Crystal

Electrical Properties of Silicon with Bistable Impurity Complexes

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Metastable and bistable defects in silicon

Cited by 21 publications

References 69 publications

In-Situ Study of Silicon Single Crystals Conductivity under Electron Irradiation

In-Situ Study of Silicon Single Crystals Conductivity under Electron Irradiation

&lt;i&gt;In-Situ&lt;/i&gt; Study of Non-Equilibrium Charge Carriers’ Behavior under Ultra-Short Pulsed Electrons Irradiation in Silicon Crystal

Electrical Properties of Silicon with Bistable Impurity Complexes

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<i>In-Situ</i> Study of Non-Equilibrium Charge Carriers’ Behavior under Ultra-Short Pulsed Electrons Irradiation in Silicon Crystal