Metastable nature of InN and In-rich InGaN alloys

Иванов, С. В.; Shubina, T. V.; Komissarova, T. A.; Jmerik, V. N.

doi:10.1016/j.jcrysgro.2014.06.019

Cited by 66 publications

(61 citation statements)

References 31 publications

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“…31,40 Given the fact that the TD density increases with increasing Ga-content in our In-rich InGaN films, 32 we can conclude that the electron mobility is hence mainly governed by residual impurity and alloy scattering. Indeed, alloy scattering might be considered as a prominent scattering mechanism in In-rich InGaN films, since they are prone to alloy compositional fluctuations 32 and formation of metallic In precipitates 41 particularly when grown under In-rich conditions. In contrast to the relatively unchanged electrical conductivity, the thermal conductivity is drastically influenced by increased alloying.…”

Section: A Thermoelectric Properties Of In-rich Ingan Alloysmentioning

confidence: 99%

Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices

Sun

Haunschild

et al. 2016

AIP Advances

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The thermoelectric properties of n-type InGaN alloys with high In-content and InN/InGaN thin film superlattices (SL) grown by molecular beam epitaxy are investigated. Room-temperature measurements of the thermoelectric properties reveal that an increasing Ga-content in ternary InGaN alloys (0 < x(Ga) < 0.2) yields a more than 10-fold reduction in thermal conductivity (κ) without deteriorating electrical conductivity (σ), while the Seebeck coefficient (S) increases slightly due to a widening band gap compared to binary InN. Employing InN/InGaN SLs (x(Ga) = 0.1) with different periods, we demonstrate that confinement effects strongly enhance electron mobility with values as high as ∼820 cm2/V s at an electron density ne of ∼5×1019 cm−3, leading to an exceptionally high σ of ∼5400 (Ωcm)−1. Simultaneously, in very short-period SL structures S becomes decoupled from ne, κ is further reduced below the alloy limit (κ < 9 W/m-K), and the power factor increases to 2.5×10−4 W/m-K2 by more than a factor of 5 as compared to In-rich InGaN alloys. These findings demonstrate that quantum confinement in group-III nitride-based superlattices facilitates improvements of thermoelectric properties over bulk-like ternary nitride alloys.

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Section: A Thermoelectric Properties Of In-rich Ingan Alloysmentioning

confidence: 99%

Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices

Sun

Haunschild

et al. 2016

AIP Advances

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“…The InN film decomposes to indium metal and N2 gas even at deposition temperatures as low as 500 °C, 4 setting an upper limit for the deposition; this forces the use of use NH3/In(CH3)3 ratios on the order of 100,000 due to the poor reactivity of ammonia at these low temperatures. 5 An alternative approach for depositing InN is a time-resolved CVD technique where the poor reactivity of NH3 is overcome by allowing it to react with chemisorbed indium-containing surface moieties rather than relying on this reactivity in the (dilute) gas phase.…”

Section: Introductionmentioning

confidence: 99%

Thermal study of an indium trisguanidinate as a possible indium nitride precursor

Buttera

Rönnby

Pedersen

et al. 2017

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Tris-N,N,-dimethyl-N′,N″-diisopropylguanidinatoindium(III) has been investigated both as a chemical vapor deposition precursor and an atomic layer deposition precursor. Although deposition was satisfactory in both cases, each report showed some anomalies in the thermal stability of this compound, warrenting further investigation, which is reported herein. The compound was found to decompose to produce diisopropylcarbodiimide both by computational modeling and solution phase nuclear magnetic resonance characterization. The decomposition was shown to have an onset at approximately 120 °C and had a constant rate of decomposition from 150 to 180 °C. The ultimate decomposition product was suspected to be bisdimethylamido-N,N,-dimethyl-N′,N″-diisopropylguanidinato-indium(III), which appeared to be an intractable, nonvolatile polymer.

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“…Согласно теории [17], при росте нитридов в металлобогащенных условиях поверхность роста смачивается 2 МС металла, а остальной излишек металла собирается в капли. Ограничение в накоплении 1.5−2 монослоя In во время фазы роста в металлобо-гащенных условиях необходимо для подавления обра-зования капель металлического индия на поверхности и, таким образом, проблем с формированием кластеров металлического In внутри слоя InN [18,19]. Средняя скорость роста слоев InN в структурах 55 и 61 со-ставляла ∼ 0.25 мкм/ч.…”

Section: методика экспериментаunclassified

Особенности спектров фотовозбуждения эпитаксиальных слоев InN, выращенных методом молекулярно-пучковой эпитаксии с плазменной активацией азота

Бушуйкин¹,

Новиков²,

Андреев³

et al. 2017

Физика И Техника Полупроводников

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Представлены результаты исследования спектров фотовозбуждения эпитаксиальных слоев InN с концен-трацией свободных носителей 10 18 −10 19 см −3 , сформированных в процессе молекулярно-пучковой эпитаксии с плазменной активацией азота. Спектры фотопроводимости, фотолюминесценции и поглощения демонстри-руют сдвиг красной границы межзонных переходов в соответствии с эффектом Бурштейна−Мосса для n-InN с различной концентрацией равновесных электронов. Для исследованных образцов наблюдалась абсолютная отрицательная фотопроводимость с наносекундным временем релаксации. Результаты фотоэлектрических, абсорбционных и люминесцентных спектроскопических экспериментов сопоставлены с технологическими параметрами и данными электронной микроскопии.

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Metastable nature of InN and In-rich InGaN alloys

Cited by 66 publications

References 31 publications

Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices

Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices

Thermal study of an indium trisguanidinate as a possible indium nitride precursor

Особенности спектров фотовозбуждения эпитаксиальных слоев InN, выращенных методом молекулярно-пучковой эпитаксии с плазменной активацией азота

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