1995
DOI: 10.1103/physrevb.52.2814
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Method for calculating photo- and electroreflectance spectra from semiconductor heterostructures

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Cited by 7 publications
(10 citation statements)
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“…The weak intralayer inhomogeneities are superimposed by the generally much stronger variations of optical constants between different layers. In previous works, we developed and applied a method to calculate PR spectra from heterostructures which treats each kind of inhomogeneity in its own way [10,11]. The intralayer inhomogeneity is treated by means of a generalization of the perturbation approach, developed for the case of an infinite half space [12].…”
Section: Resultsmentioning
confidence: 99%
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“…The weak intralayer inhomogeneities are superimposed by the generally much stronger variations of optical constants between different layers. In previous works, we developed and applied a method to calculate PR spectra from heterostructures which treats each kind of inhomogeneity in its own way [10,11]. The intralayer inhomogeneity is treated by means of a generalization of the perturbation approach, developed for the case of an infinite half space [12].…”
Section: Resultsmentioning
confidence: 99%
“…To calculate the electric field profile determining the spatial distribution of the DF changes, we assumed that the potential is constant far inside the samples and takes a certain surface value at the sample/vacuum boundary [10,11]. In the case of undoped systems, this surface potential is not determined by the surfacelocalized states' density but by the occupation of the available states by free carriers which have migrated to the surface from the MBE grown layers.…”
Section: Resultsmentioning
confidence: 99%
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