Method for extracting deepsubmicrometre MOSFET parameters

Fikry, W.; Ghibaudo, G.; Haddara, H.; Cristoloveanu, S.; Dutoit, M.

doi:10.1049/el:19950481

Cited by 17 publications

(10 citation statements)

References 4 publications

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“…The exponent a is a fitting parameter, generally ranging from 2 to 5. Recently, several alternative techniques have been proposed to extract vsat, both at 300 K [74] and at cryogenic T [7], [8], [75]. However, due to experimental difficulties (establishing an as homogeneous as possible drift field; source-drain resistance in short-channel devices, ...) a large spread is generally found, givin rise to values between 4.2~106 cm/s up % to 9.2~106 cmls for electrons at room temperature [75] and 7x10 c d s for holes [7].…”

Section: Velocity Saturation and Overshootmentioning

confidence: 99%

Parameter Extraction of MOSFETs Operated at Low Temperature

Simoen

Claeys

Martino³

1996

J. Phys. IV France

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Abstract. In this paper, an overview is given of the methods for practical parameter extraction for MOSFETs operated at cryogenic temperatures. The methods considered are based on the input characteristics of the device, from which the charge threshold voltage, the subthreshold slope, the effective mobility, the series resistance and the effective gate length is derived. Whenever possible, the physical basis of the mostly semi-empirical methods will be outlined. Finally, pitfalls and problems, related to low temperature MOSFET characterisation, like transient and freeze-out effects, self-heating, etc, are briefly discussed.

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Section: Velocity Saturation and Overshootmentioning

confidence: 99%

Parameter Extraction of MOSFETs Operated at Low Temperature

Simoen

Claeys

Martino³

1996

J. Phys. IV France

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“…In Region I, we employ the gradual channel approximation (GCA) and consider the effective mobility as a function of both gate voltage and drain voltage [13]- [15] (3)…”

Section: A Mosfet Channel Under High Lateral Field Effectmentioning

confidence: 99%

“…At the end of Region I, where and , we obtain (12) Since the current in the channel is continuous, from (11) and (12) we can calculate the ratio and re-express (10) as a function of the quasi-Fermi potential (13) Although carriers in the channel become "hot" as the applied field increases, the average velocity of the carriers is still smaller than their thermal velocity. Hence, the equilibrium condition still holds, and the voltage fluctuation can be modeled by thermal noise with mean square value (14) where is the voltage drop across the resistance of the infinitesimal segment in Region I.…”

Section: B Low-field Enhanced Channel Noise At the Drain Terminal Gementioning

confidence: 99%

Drifting-Dipole Noise (DDN) Model of MOSFETs for Microwave Circuit Design

Nguyen

Feng

2010

IEEE Trans. Microwave Theory Techn.

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Physic-based formulations for the high-frequency noise characteristics of nanometer MOSFETs working at saturation are developed. In the derivation, field-dependent mobility, as well as carrier heating effect in the gradual channel approximation region, is taken into account. In addition, diffusion noise due to velocity saturation carriers in the high electric field region is calculated using Statz's drifting dipole theory. Excellent agreement between the proposed model and experimental noise data for 120-nm MOSFET technology was obtained over device sizes, biases, and frequencies up to 26 GHz. The analytical noise model can be incorporated into any compact model to enable first-pass silicon design of microwave circuit.

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“…It is well known that in strong inversion and under small drain voltage, the drain current [3] in the linear region is given by…”

Section: B Effective Mobility In Strained-si Channelmentioning

confidence: 99%

“…The inversion layer mobility [3] of electrons in short and deep submicrometer devices which depends on both the lateral and vertical fields can be modeled by…”

Section: B Effective Mobility In Strained-si Channelmentioning

confidence: 99%