Metrics for Comparison Between Displacement Damage due to Ion Beam and Neutron Irradiation in Silicon BJTs

Bielejec, Edward S.; Vizkelethy, G.; Fleming, R. M.; King, Donald B.

doi:10.1109/tns.2007.909513

Cited by 15 publications

(5 citation statements)

References 6 publications

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“…For bi po lar tran sis tors, a time-de pend ent an nealing fac tor, F(t), may be ex pressed [1,10,18]…”

Section: The Orymentioning

confidence: 99%

“…The com plex lin ear-ex po nen tial re gres sion func tions, describ ing vari a tions of the out put volt age and qui es cent cur rent dur ing ir ra di a tion of the LT1086CT5 volt age reg u la tor, are pre sented in eqs. (10) and (11)…”

Section: Re Sultsmentioning

confidence: 99%

“…In pre vi ous years, many au thors have ana lysed an neal ing in sil i con semi con duc tor de vices [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17]. The main fo cus was on re search of an neal ing in MOS tran sis tors and in te grated cir cuits [4][5][6][7][11][12][13][14][15]], yet con sid er able at ten tion was also paid for the time-depend ent ra di a tion ef fects in bi po lar de vices and re lated field ox ides [3,8,10]. Ra di a tion re sponse of an in tegrated cir cuit is very com plex, be ing af fected by the char ac ter is tics of its tran sis tors (MOSFET or bi po lar, sil i con or heterojunction, etc.…”

Section: Introductionmentioning

confidence: 99%

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Rapid and long-term gamma-radiation annealing in low-dropout voltage regulators

Vukić

2017

NUCL TECH RAD PROT

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Sam ples of four types of low-drop out volt age reg u la tors, with both se rial pnp and npn transis tors, were ex am ined in room-tem per a ture iso ther mal gamma ra di a tion an neal ing. Af ter un in ter rupted ex po sure to a to tal ion is ing dose of 500 Gy, bi ased and loaded volt age reg u lators were ex am ined in room-tem per a ture an neal ing within the first 30 min utes af ter the expo sure. Be side the on-line mea sure ment of out put volt age and qui es cent cur rent dur ing the thirty-min ute pe riod im me di ately af ter ir ra di a tion, also re sults were pro cured af ter 10-year room-tem per a ture spon ta ne ous re cov ery. Data ob tained dur ing the ir ra di a tion and rapid anneal ing were fit ted with lin ear, ex po nen tial, and power-law re gres sion func tions. A sim ple pro ce dure was pro posed, based on the qui es cent cur rent an neal ing fac tor, for the quick es tima tion of the in te grated volt age reg u la tor's ra di a tion sen si tiv ity dur ing the post-ir ra di a tion iso ther mal an neal ing. In or der to es ti mate the cir cuit's ra di a tion sen si tiv ity, im me di ately af ter ir ra di a tion, tested de vices have to be left in the same op er at ing con di tions as dur ing the ex posure. If a clear trend of the qui es cent cur rent re cov ery can be ob served, fur ther ex am i na tions have to be im ple mented to es ti mate if a cir cuit is ac cept ably ra di a tion-tol er ant. If no re cov ery trend can be ob served within the first hour af ter ir ra di a tion, or even fur ther deg ra da tion is no ticed, then the ex am ined volt age reg u la tor is a ra di a tion-sen si tive de vice and can not be used in ra di a tion en vi ron ments. The de scribed pro ce dure is based on the mac ro scopic ef fects of the ra di a tion-in duced charge-trap ping in field ox ides and in ter faces. Key words: volt age reg u la tor, gamma ra di a tion, qui es cent cur rent, an neal ing fac tor, iso ther mal an neal ing, post-ir ra di a tion ef fect, re gres sion anal y sis V. Dj. Vuki}.: Rapid and Long-Term Gamma-Ra di a tion An neal ing in ...

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“…For bi po lar tran sis tors, a time-de pend ent an nealing fac tor, F(t), may be ex pressed [1,10,18]…”

Section: The Orymentioning

confidence: 99%

Section: Re Sultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Rapid and long-term gamma-radiation annealing in low-dropout voltage regulators

Vukić

2017

NUCL TECH RAD PROT

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“…However, it is https://doi.org/10.14407/jrpr.2023.00059 JRPR difficult to obtain precise performance with the thermal diffusion method because this approach is greatly affected by temperature during the manufacturing process. In high energy particles irradiation, gamma rays, electron beams, protons, and neutrons are used [2][3][4][5][6][7]. Irradiation by high energy particles causes total ionization dose effect and displacement damage [8,9].…”

Section: Introductionmentioning

confidence: 99%

Effects of Fast Neutron Irradiation on Switching of Silicon Bipolar Junction Transistor

Ahn,

Sun

2023

J Radiat Prot Res

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Background: When bipolar junction transistors (BJTs) are used as switches, their switching characteristics can be deteriorated because the recombination time of the minority carriers is long during turn-off transient. When BJTs operate as low frequency switches, the power dissipation in the on-state is large. However, when BJTs operate as high frequency switches, the power dissipation during switching transients increases rapidly.Materials and Methods: When silicon (Si) BJTs are irradiated by fast neutrons, defects occur in the Si bulk, shortening the lifetime of the minority carriers. Fast neutron irradiation mainly creates displacement damage in the Si bulk rather than a total ionization dose effect. Defects caused by fast neutron irradiation shorten the lifetime of minority carriers of BJTs. Furthermore, these defects change the switching characteristics of BJTs.Results and Discussion: In this study, experimental results on the switching characteristics of a pnp Si BJT before and after fast neutron irradiation are presented. The results show that the switching characteristics are improved by fast neutron irradiation, but power dissipation in the on-state is large when the fast neutrons are irradiated excessively.Conclusion: The switching characteristics of a pnp Si BJT were improved by fast neutron irradiation.

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“…Deep level transient spectroscopy (DLTS) is very useful to define the characteristics of irradiation defects [18], [19]. In this work, DLTS is employed to attempt to provide direct results for the mechanisms of the synergistic effects.…”

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confidence: 99%

Synergistic Effect of Ionization and Displacement Damage in NPN Transistors Caused by Protons With Various Energies

Liu

Yang

2015

IEEE Trans. Nucl. Sci.

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Based on 2N2222 NPN bipolar junction transistors (BJTs), synergistic effect between ionization and displacement defects induced by 3 MeV, 5 MeV and 10 MeV protons were researched. High-energy protons can be incident upon the silicon (Si) BJTs, producing displacement defects in silicon bulk and ionization damage in the oxide layer of BJTs, respectively. Both ionization and displacement damage result in the degradation of current gain of BJTs. At a given displacement dose, 10 MeV protons induce the maximum degradation of current gain of 2N2222 NPN BJTs, while 3 MeV protons cause the minimum degradation. In this case, non-ionizing energy loss (NIEL) methodology is not suitable to normalize the displacement damage induced by 3 MeV, 5 MeV and 10 MeV protons, which is attributed to the synergistic effect of ionization and displacement damage. The displacement defect centers in based-collector junction of 2N2222 transistor induced by 3 MeV, 5 MeV and 10 MeV proton exposures, were discovered and characterized by deep level transient spectroscopy (DLTS). Based on the comparison between the electrical parameters and the DLTS results, it is shown that, interface traps due to ionization damage induced by high-energy protons spread the emitter-base depletion layer, leading to the enhancement effects to displacement damage in the base-collector junction of NPN BJT. Meanwhile, bias voltage used during DLTS measurement influence characteristics of DLTS signals. With the increasing reverse bias, the value of for VO, , E4 and centers increases.

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Metrics for Comparison Between Displacement Damage due to Ion Beam and Neutron Irradiation in Silicon BJTs

Cited by 15 publications

References 6 publications

Rapid and long-term gamma-radiation annealing in low-dropout voltage regulators

Rapid and long-term gamma-radiation annealing in low-dropout voltage regulators

Effects of Fast Neutron Irradiation on Switching of Silicon Bipolar Junction Transistor

Synergistic Effect of Ionization and Displacement Damage in NPN Transistors Caused by Protons With Various Energies

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