2017
DOI: 10.1364/oe.25.002460
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Metrology of nanoscale grating structures by UV scatterometry

Abstract: In this contribution we demonstrate goniometric scatterometry measurements of gratings with linewidths down to 25 nm on silicon wafers with an inspection wavelength of 266 nm. For each sample, measurements have been performed in four different configurations and the obtained data have been evaluated in parallel. As results we present the reconstruction of the complete cross-section profile. We introduce a novel geometry parameterization which overcomes some limitations of the default parameterization. A co-var… Show more

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Cited by 39 publications
(23 citation statements)
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“…denote spatial or temporal averaging). Then J becomes the Jones generator [10] of a depolarizing Mueller matrix M whose coherency matrix C is given by [9] C = c c + = c m c + m + ∆c ∆c + = C m + ∆C (2) where C m and ∆C are the mean and the fluctuating matrix components of C, respectively (the superscript '+' denotes complex conjugate transpose). In Eq.…”
Section: Derivation and Physical Interpretation Of The Decompositionmentioning
confidence: 99%
See 2 more Smart Citations
“…denote spatial or temporal averaging). Then J becomes the Jones generator [10] of a depolarizing Mueller matrix M whose coherency matrix C is given by [9] C = c c + = c m c + m + ∆c ∆c + = C m + ∆C (2) where C m and ∆C are the mean and the fluctuating matrix components of C, respectively (the superscript '+' denotes complex conjugate transpose). In Eq.…”
Section: Derivation and Physical Interpretation Of The Decompositionmentioning
confidence: 99%
“…(11) and (12). Typically, one uses the Cloude decomposition [2,9], the Lu-Chipman decomposition [14], the virtual experiment method [15] or the recently proposed instrument-dependent method [16] for solving the first kind of problems. The second situation is commonly tackled with the differential decomposition [17][18][19] or with its equivalent, the matrix roots decomposition [20].…”
Section: Application Of the Decomposition To Experimental Examplesmentioning
confidence: 99%
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“…The permitted fabrication tolerances for three exemplary reflectivities are in the range of a few tens of nanometers. For binary structures these tolerances are realistic in terms of technological feasibility [38]. 1 Besides the residual transmission of the metasurface, material absorption in silicon may limit the feasible reflectivity.…”
Section: A Optical Optimizationmentioning
confidence: 99%
“…In comparison with SEM, AFM, and TEM, optical scatterometry based on a reflectometer or an ellipsometer has become one of the most important techniques for measuring the critical dimension (CD) and overlay of nanostructures in semiconductor manufacturing, due to its inherent noncontact, nondestructive, time-effective, and relatively inexpensive merits [3][4][5][6][7][8][9]. It is different from conventional image-based metrology techniques, such as optical microscopy, in that the measurement in optical scatterometry is not a WYSIWYG (what you see is what you get) process and typically involves the solution of an inverse problem by fitting the measured data with a multiparameter model that describes the light-nanostructure interaction.…”
Section: Introductionmentioning
confidence: 99%