MeV As and Au ion implantation in Si, GaP, GaAs, InSb and LiNbO3: Study of range and lattice location

Irradiation Effects on the Retention of Hydrogen in Al 2 O 3

“…2(b) is deeper than the one simulated by the SRIM code in Fig. 1(b), which is proved by the results of Shi et al [20] and Kuri et al [21,22] Therefore the measured damage profile obtained from the RBS/C experiments will be used to investigate the effects of irradiation damage on the TPRP of Al The projected range simulated by the SRIM code is 1020 nm, proving that the experimental error is in the acceptable scope. Hydrogen penetrates through the depth range of Au ion irradiation, probably interacting with irradiation defects, which will be discussed.…”

Nanoscale self-affine surface smoothing by ion bombardment

“…The observation of scale dependent smoothing with increased smoothing at smaller length scales has direct bearing on ion beam processing of nanostructures. Si(100) substrates were irradiated with 2.0 MeV Si + ions in the ion implantation beam line of our 3 MV tandem Pelletron accelerator [11,12]. The ion beam was incident along the surface normal (θ ≈ 0) and rastered on the sample in order to obtain a uniformly irradiated area.…”