Micro Arc Monitoring by Detecting Charge Build-Up on Glass Surface of Viewing Port due to Plasma Dispersion in Plasma Processing Equipment

Yasaka, Mitsuo; Takeshita, M.; Miyagawa, R.

doi:10.1143/jjap.42.l157

Cited by 16 publications

(24 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…19,20) The VP-Probe can effectively detect a plasma state since the potential corresponds to the state of the bulk plasma. This probe, attached to the outer surface of the viewing port of the process chamber, can measure the change in floating potential on the inner surface.…”

Section: Experimental Methodsmentioning

confidence: 99%

Instantaneous Generation of Many Flaked Particles by Impulsive Force of Electric Field Stress Acting on Inner Wall of Mass-Production Plasma Etching Equipment

Kasashima

Nabeoka

Uesugi

2013

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

To elucidate the mechanism of instantaneous generation of many flaked particles in plasma etching equipment, we investigate the relationship between the generation of flaked particles from deposited films (consisting of etching reaction products on the ground electrode) and the plasma stability under mass-production conditions. Many particles are observed with our particle monitoring system when plasma instability occurs. The generation of such flaked particles correlates well with the occurrence of a large, rapid change in floating potential on the chamber wall. Our results indicate that many flaked particles from films deposited on a ground electrode are generated by electric field stress acting instantaneously and working as an impulsive force. #

show abstract

Section: Experimental Methodsmentioning

confidence: 99%

Instantaneous Generation of Many Flaked Particles by Impulsive Force of Electric Field Stress Acting on Inner Wall of Mass-Production Plasma Etching Equipment

Kasashima

Nabeoka

Uesugi

2013

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…We have confirmed that the etching rate and uniformity are left unchanged by this upgrade. A viewing port style plasma probe (VP-Probe) [4], [5] is used to acquire a reference signal for the plasma state. The VP-Probe, which is attached to the outside surface of the viewing port on the process chamber, can detect the change in the floating potential on the inner surface of the chamber.…”

Section: Experimental Methodsmentioning

confidence: 99%

“…The waveform shows a complex probe signal that increases to positive values and decreases to negative values. These signals depend on the disproportion between the ion and electron fluxes into the chamber wall [4], [5]. The positive changes may arise from a pinhole in the ESC and slight wafer movement.…”

Section: B Detection Of Micro-arc Discharge Around a Wafermentioning

confidence: 99%

“…However, these methods remain unpracticed, because they cannot locate the anomalous discharge, and mass production equipment usually does not have a suitable viewing port for the electromagnetic wave and plasma radiation techniques. Acoustic emission (AE) methods, which employ a conventional AE sensor located on the outside wall of the chamber, can detect the acoustic wave that accompanies the anomalous discharge [4]- [8]. Although the transducers can locate the discharge, they cannot detect the acoustic waves generated by micro-arc discharge around a wafer, because the acoustic waves are attenuated as they propagate from the wafer stage to the chamber walls.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Detection of Micro-Arc Discharge Using ESC Wafer Stage With Built-In AE Sensor

Kasashima¹,

Tabaru²,

Kobayashi³

et al. 2013

IEEE Trans. Semicond. Manufact.

Self Cite

View full text Add to dashboard Cite

An electrostatic chuck (ESC) wafer stage with a built-in acoustic emission (AE) sensor is developed to detect micro-arc discharge occurring around a wafer. The built-in AE sensor detects acoustic waves caused by anomalous discharge with high sensitivity. The results demonstrate the effectiveness of this novel ESC wafer stage for detecting micro-arc discharge occurring around a wafer and will contribute greatly to improving the production yield of semiconductor manufacturing.Index Terms-Acoustic emission sensor, electrostatic chuck, Micro-arc discharge, plasma etching.

show abstract

“…To detect the abnormal discharge, the analysis technique of the plasma impedance and the optical emission has been widely used. [1][2] The detection technique like acoustic emission (AE) sensor is reported in recent years. [3] We propose a novel method to detect the abnormal discharge.…”

Section: Introductionmentioning

confidence: 99%

Development on the Highly Precise Detection System for the Abnormal Discharge at the Plasma Etching Equipment

Ise

Shinohara

Hanawa

2006

2006 IEEE International Symposium on Semiconductor Manufacturing

View full text Add to dashboard Cite

show abstract

Micro Arc Monitoring by Detecting Charge Build-Up on Glass Surface of Viewing Port due to Plasma Dispersion in Plasma Processing Equipment

Cited by 16 publications

References 1 publication

Instantaneous Generation of Many Flaked Particles by Impulsive Force of Electric Field Stress Acting on Inner Wall of Mass-Production Plasma Etching Equipment

Instantaneous Generation of Many Flaked Particles by Impulsive Force of Electric Field Stress Acting on Inner Wall of Mass-Production Plasma Etching Equipment

Detection of Micro-Arc Discharge Using ESC Wafer Stage With Built-In AE Sensor

Development on the Highly Precise Detection System for the Abnormal Discharge at the Plasma Etching Equipment

Contact Info

Product

Resources

About