2018
DOI: 10.3390/mi9060294
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Micro-Fabricated Resonator Based on Inscribing a Meandered-Line Coupling Capacitor in an Air-Bridged Circular Spiral Inductor

Abstract: This letter presents a high-performance micro-fabricated resonator based on inscribing a meandered-line square coupling capacitor in an air-bridged circular spiral inductor on the GaAs-integrated passive device (IPD) technology. The main advantages of the proposed method, which inserts a highly effective coupling capacitor between the two halves of a circular spiral inductor, are the miniaturized size, enhanced coupling coefficient, and improved selectivity. Moreover, using an air-bridge structure utilizes the… Show more

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Cited by 12 publications
(9 citation statements)
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“…R denotes the resistance loss of the circular intertwined spiral inductor of inductance (L) with the substrate-related parameters COX, CSUB and RSUB. Csc and Rsc denote the coupling capacitance and loss resistance of the spiral capacitor [12,13].…”
Section: Methodsmentioning
confidence: 99%
“…R denotes the resistance loss of the circular intertwined spiral inductor of inductance (L) with the substrate-related parameters COX, CSUB and RSUB. Csc and Rsc denote the coupling capacitance and loss resistance of the spiral capacitor [12,13].…”
Section: Methodsmentioning
confidence: 99%
“…The IPD has the advantages of being a simplified model, having a reduced size, and enhanced performance, benefiting from the reduction of parasitic effects compared with standard discrete systems [8,9]. Moreover, the Q-factor used to evaluate device performances is low for lumped elements but can be enhanced using IPD technology as reported in our previous studies [10][11][12]. GaAs substrates have become the second most important semiconductor materials owing to their high saturated electron drift velocity, low field mobility, low parasitics, and good interdevice isolation.…”
Section: Introductionmentioning
confidence: 97%
“…Apart from the perfection, the SBS-based device is hard to be monolithically integrated with other on-chip photodetectors and electro-optic modulators [ 14 , 15 , 16 ]. In general, lumped elements have a lower Q value (for CMOS, Q factor is less than 15) [ 17 , 18 ]; to some extent, this problem can be mitigated by implementing integrated passive device (IPD) technology (Q factor >30), as is described in our previous reports [ 19 , 20 , 21 , 22 ]. Integrated passive device technology employs a newly developed fabrication technique that achieves the desired trade-off for package integration systems and affords complete module solutions; thus, overall improved system performance can be achieved through integration with other functionalities.…”
Section: Introductionmentioning
confidence: 99%