Microcrystalline silicon deposition: Process stability and process control

Donker, van den Mn Menno; Kilper, T.; Grunsky, D.; Rech, Bernd; Houben, Lothar; Kessels, Wmm Erwin; Sanden, van de Mcm Richard

doi:10.1016/j.tsf.2006.11.119

Cited by 32 publications

(16 citation statements)

References 28 publications

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“…14 The deterioration of V oc and FF in relatively thin cells can be partially mitigated by using substrates with smoother surface morphology (e.g., smooth U-shape instead of steep V-shape), 15,20 by implementing silicon oxide-based (SiO x :H) doped layers, 18,21,22 and by optimizing the plasma deposition conditions. 18,23,24 However, it is still challenging to effectively maintain high V oc and FF at thick absorber layers. Therefore, textured substrates which can provide efficient light trapping and maintain high V oc and FF for thick absorber layers under high deposition rates are highly desirable.…”

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confidence: 99%

Micro-textures for efficient light trapping and improved electrical performance in thin-film nanocrystalline silicon solar cells

Hui‐min

Psomadaki

Isabella

et al. 2013

Applied Physics Letters

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Micro-textures with large opening angles and smooth U-shape are applied to nanocrystalline silicon (nc-Si:H) solar cells. The micro-textured substrates result in higher open-circuit-voltage (Voc) and fill-factor (FF) than nano-textured substrates. For thick solar cells, high Voc and FF are maintained. Particularly, the Voc only drops from 564 to 541 mV as solar cell thickness increases from 1 to 5 μm. The improvement in electrical performance of solar cells is ascribed to the growth of dense nc-Si:H layers free from defective filaments on micro-textured substrates. Thereby, micromorph tandem solar cells with an initial efficiency of 13.3%, Voc = 1.464 V, and FF = 0.759 are obtained.

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mentioning

confidence: 99%

Micro-textures for efficient light trapping and improved electrical performance in thin-film nanocrystalline silicon solar cells

Hui‐min

Psomadaki

Isabella

et al. 2013

Applied Physics Letters

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“…1): It is well known that an increase of I RS C for the initial growth phase induces an overall increase of I RS C for the later layer growth. 12 Increasing SC avoids strongly deviating crystallinity from advantageous I RS C of $60%-70% 1,12,15,[18][19][20] ( Fig. 1).…”

Section: Methodsmentioning

confidence: 99%

“…1,17 The highest solar cell performances were detected for absorber layers with Raman crystallinities of about 60%-70%. 1,12,15,[18][19][20] The ideal evolution of the Raman crystallinity throughout the absorber layer is still a matter of debate. Therefore, this is one of the questions that will be addressed here.…”

Section: Introductionmentioning

confidence: 99%

“…In general, PECVD-inherent process drifts 19,21 and the conical evolution of the crystallites 1,9,22 for low Raman crystallinities impede a homogeneous absorber layer growth in the narrow deposition window close to 60%-70%. 21 To achieve these Raman crystallinities throughout the entire absorber layer process settings have to be adapted during the deposition of lc-Si:H. Since this requires an adequate monitoring of the Raman crystallinity, various in-situ and ex-situ measurement techniques have been applied to characterize the lc-Si:H absorber layer deposition.…”

Section: Introductionmentioning

confidence: 99%

“…21 To achieve these Raman crystallinities throughout the entire absorber layer process settings have to be adapted during the deposition of lc-Si:H. Since this requires an adequate monitoring of the Raman crystallinity, various in-situ and ex-situ measurement techniques have been applied to characterize the lc-Si:H absorber layer deposition. [8][9][10]12,13,19,[21][22][23][24][25][26][27][28] To monitor the layer growth with adequate accuracy, diagnostic methods with high depth and temporal resolution are required. For example, in-situ ellipsometry features high surface sensitivity.…”

Section: Introductionmentioning

confidence: 99%

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Interplay between crystallinity profiles and the performance of microcrystalline thin-film silicon solar cells studied by in-situ Raman spectroscopy

Fink

Muthmann

Mück

et al. 2015

Journal of Applied Physics

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The intrinsic microcrystalline absorber layer growth in thin-film silicon solar-cells is investigated by in-situ Raman spectroscopy during plasma enhanced chemical vapor deposition. In-situ Raman spectroscopy enables a detailed study of the correlation between the process settings, the evolution of the Raman crystallinity in growth direction, and the photovoltaic parameters η (solar cell conversion efficiency), JSC (short circuit current density), FF (fill factor), and VOC (open circuit voltage). Raman spectra were taken every 7 nm of the absorber layer growth depending on the process settings. The Raman crystallinity of growing microcrystalline silicon was determined with an absolute error of approximately ±5% for total absorber layer thicknesses >50 nm. Due to this high accuracy, inherent drifts of the Raman crystallinity profiles are resolvable for almost the entire absorber layer deposition. For constant process settings and optimized solar cell device efficiency Raman crystallinity increases during the absorber layer growth. To compensate the inhomogeneous absorber layer growth process settings were adjusted. As a result, absorber layers with a constant Raman crystallinity profile — as observed in-situ — were deposited. Solar cells with those absorber layers show a strongly enhanced conversion efficiency by ∼0.5% absolute. However, the highest FF, VOC, and JSC were detected for solar cells with different Raman crystallinity profiles. In particular, fill factors of 74.5% were observed for solar cells with decreasing Raman crystallinity during the later absorber layer growth. In contrast, intrinsic layers with favorable JSC are obtained for constant and increasing Raman crystallinity profiles. Therefore, monitoring the evolution of the Raman crystallinity in-situ provides sufficient information for an optimization of the photovoltaic parameters with surpassing depth resolution.

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Thin‐Film Deposition Processes

Rath

2012

Advanced Silicon Materials for Photovoltaic Applications

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Microcrystalline silicon deposition: Process stability and process control

Cited by 32 publications

References 28 publications

Micro-textures for efficient light trapping and improved electrical performance in thin-film nanocrystalline silicon solar cells

Micro-textures for efficient light trapping and improved electrical performance in thin-film nanocrystalline silicon solar cells

Interplay between crystallinity profiles and the performance of microcrystalline thin-film silicon solar cells studied by in-situ Raman spectroscopy

Thin‐Film Deposition Processes

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