Microstructural characterization of CIGS formation using different selenization processes

Liao, Kuang-Hsiang; Su, Ce; Ding, Yu-Ting; Koo, Horng-Show

doi:10.1016/j.apsusc.2012.12.142

Cited by 22 publications

(1 citation statement)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Up to now, research has mainly focused on the influence of high-temperature selenization profiles on the CIGS film structure and device properties [12][13][14][15][16], whereas the effects of pre-heating temperature on the CIGS film growth in a cracked-Se atmosphere have not been reported yet. In this study, a thermal cracking technique is adopted to produce cracked-Se vapor.…”

Section: Introductionmentioning

confidence: 99%

The influence of pre-heating temperature on the CIGS thin film growth and device performance prepared in cracked-Se atmosphere

Liu

et al. 2015

Semicond. Sci. Technol.

View full text Add to dashboard Cite

The influence of pre-heating temperature on cracked-selenized Cu(In, Ga)Se 2 (CIGS) films' structure, growth kinetics, and photovoltaic performance is investigated. The 'large island grains' on the upper surface are the precursors of Cu 2−x Se and finally evolve into Cu 2−x Se as the pre-heating temperature increases to 400 °C. The 'large island grains', as well as In 2 Se 3 , are considered to be two decisive factors in forming CIGS as they facilitate the diffusion of cracked-Se into the thin films, because they make the films more incompact and suppress the fast formation of complete single CuInSe 2 (CIS) during the 2nd heating. Stoichiometric CIGS thin films without a bi-layer structure and phase separation can be achieved by adjusting the appropriate pre-heating temperature. The performance of the solar cells is mainly influenced by the current leakage caused by small grains and cavities near the CIGS/Mo back contact.

show abstract